会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Gate drive circuit
    • 门驱动电路
    • US09484908B1
    • 2016-11-01
    • US14744998
    • 2015-06-19
    • HELLA CORPORATE CENTER USA, INC.
    • Juncheng LuHua Bai
    • H03K3/00H03K17/13H03K17/687
    • H03K17/133H03K17/122H03K17/164H03K17/284H03K17/6871
    • A driver circuit has a gate drive terminal that produces a gate drive signal to control paralleled power semiconductor switches, such as GaN high electron mobility transistor (HEMT) devices. One of the switches is closest to the gate drive terminal such that its gate drive loop inductance is smaller than the remaining switches that are farther away having a larger loop inductance. An additional resistor or gate-source capacitor is provided in the gate drive circuit of the closest switch which increases the total gate resistance of the closest switch compared to the remaining switches, which delays the turn off time of the closest switch. The delay permits zero voltage switching turn-off of the remaining switches to reduce noise. The closest switch is hard switched off but has the smallest loop inductance, which allows optimized turn off.
    • 驱动器电路具有栅极驱动端子,其产生栅极驱动信号以控制并联的功率半导体开关,例如GaN高电子迁移率晶体管(HEMT)器件。 其中一个开关最靠近栅极驱动端子,使得其栅极驱动环路电感小于离开更大环路电感的剩余开关。 在最接近的开关的栅极驱动电路中提供了附加的电阻器或栅极 - 源极电容器,这增加了与其余开关相比最近的开关的总栅极电阻,这延迟了最接近的开关的关断时间。 延迟允许剩余开关的零电压开关关断以降低噪声。 最接近的开关被硬关闭,但是具有最小的环路电感,这允许优化的关断。