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    • 3. 发明申请
    • SOLID-STATE IMAGING DEVICE
    • 固态成像装置
    • US20130193313A1
    • 2013-08-01
    • US13799349
    • 2013-03-13
    • Hamamatsu Photonics K.K.
    • Harumichi MORIRyuji KYUSHIMAKazuki FUJITA
    • H04N5/378
    • H04N5/378A61B6/00A61B6/14A61B6/4233H01L27/14607H01L27/14643H01L27/14658H01L27/14806H04N5/32H04N5/3742
    • A solid-state imaging device of one embodiment includes a light receiving section including of a plurality of pixels 11 having respective photodiodes, the pixels being two-dimensionally arrayed in M rows and N columns; N readout lines disposed for the respective columns and connected with the photodiodes PD included in the pixels of a respective columns via readout switches; a signal output section for outputting a voltage value according to an amount of charge input through each of the readout lines; and a vertical shift register for controlling an opening and closing operation of the readout switch for each of the rows. A contour between one side along a row direction of the light receiving section and a pair of sides along a column direction has a stepped shape. A dummy photodiode region is formed along the stepped contour of the light receiving section.
    • 一个实施例的固态成像装置包括光接收部分,其包括具有各自的光电二极管的多个像素11,所述像素被二维排列成M行N列; N个读出线被设置用于各列,并且经由读取开关与包括在各列的像素中的光电二极管PD连接; 信号输出部分,用于根据通过每条读出线输入的电荷量输出电压值; 以及垂直移位寄存器,用于控制每行的读出开关的打开和关闭操作。 沿着光接收部分的行方向的一侧和沿着列方向的一对侧面之间的轮廓具有台阶形状。 沿着光接收部分的台阶轮廓形成虚拟光电二极管区域。
    • 7. 发明申请
    • SOLID-STATE IMAGE PICKUP APPARATUS AND X-RAY INSPECTION SYSTEM
    • 固态图像拾取装置和X射线检测系统
    • US20140037060A1
    • 2014-02-06
    • US14048710
    • 2013-10-08
    • HAMAMATSU PHOTONICS K.K.
    • Harumichi MORIRyuji KYUSHIMAKazuki FUJITA
    • G01N23/04
    • G01N23/04A61B6/032H04N5/32H04N5/3454H04N5/347H04N5/353H04N5/37457
    • A solid-state image pickup apparatus 1A includes a photodetecting section 10A and a signal readout section 20 etc. In the photodetecting section 10A, M×N pixel units P1,1 to PM,N are arrayed in M rows and N columns. When in a first imaging mode, a voltage value according to an amount of charges generated in a photodiode of each of the M×N pixel units in the photodetecting section 10A is output from the signal readout section 20. When in a second imaging mode, a voltage value according to an amount of charges generated in the photodiode of each pixel unit included in consecutive M1 rows in the photodetecting section 10A is output from the signal readout section 20. When in the second imaging mode than when in the first imaging mode, the readout pixel pitch in frame data is smaller, the frame rate is higher, and the gain being a ratio of an output voltage value to an input charge amount in the signal readout section 20 is greater.
    • 固体摄像装置1A包括受光部分10A和信号读出部分20等。在受光部分10A中,将M×N个像素单元P1,1至PM,N排列成M行和N列。 当处于第一成像模式时,从信号读出部20输出根据受光部10A中的每个M×N像素单位的光电二极管中产生的电荷量的电压值。当处于第二成像模式时, 从信号读出部20输出根据在受光部10A中连续的M1行包含的各像素单位的光电二极管中产生的电荷量的电压值。当处于第二摄像模式时,与第一摄像模式相比, 帧数据中的读出像素间距较小,帧速率较高,并且作为信号读出部20中的输出电压值与输入电荷量的比的增益较大。
    • 10. 发明申请
    • SOLID-STATE IMAGER AND X-RAY CT APPARATUS INCLUDING SAME
    • 固态成像仪和X射线CT设备,包括它们
    • US20130279650A1
    • 2013-10-24
    • US13921565
    • 2013-06-19
    • HAMAMATSU PHOTONICS K.K
    • Kazuki FUJITAHarumichi MORIRyuji KYUSHIMAMasahiko HONDA
    • G01T1/24
    • G01T1/247G01T1/249H01L27/14656H01L27/14658H04N5/32H04N5/3592H04N5/374
    • The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. The solid-state imaging device (1) comprises a photodetecting section (10) having M×N pixel portions P1,1 to PM,N two-dimensionally arranged in a matrix of M rows and N columns. A pixel portion Pm,n of the photodetecting section (10) includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW1 connected to the photodiode PD. The pixel portion Pm,n occupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SW1 is formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PD1 surrounded by the channel stopper CS is formed.
    • 本发明涉及即使当任何读出布线和行选择布线断开时,具有用于捕获高分辨率图像的结构的固态成像装置等。 固态成像装置(1)包括具有M×N个像素部分P1,1〜PM,N,以二维方式排列成M行N列的矩阵的光检测部(10)。 受光部(10)的像素部Pm,n包括:光电二极管PD,其生成与入射光强度相对应的量的电荷;以及与光电二极管PD连接的读出用开关SW1。 像素部分Pm,n占据基本上正方形的区域,并且大部分区域是光电二极管PD的区域。 用作读出开关SW1的场效应晶体管形成在该区域的一个拐角处。 在由像素部分夹持的区域中连续形成通道阻挡件CS。 在由彼此相邻的任何2×2像素部分包围的区域中,形成由通道阻挡器CS包围的虚拟光电二极管PD1。