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    • 7. 发明授权
    • Thin film transistor and display device using the same
    • 薄膜晶体管和使用其的显示装置
    • US09171956B2
    • 2015-10-27
    • US13072625
    • 2011-03-25
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • H01L29/786H01L27/12
    • H01L29/78621H01L27/1285H01L29/78696
    • In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.
    • 在薄膜晶体管和具有该薄膜晶体管的显示装置中,根据示例性实施例的薄膜晶体管包括:半导体层,包括沟道区,源极区,漏极区,光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分,源极沟道部分和漏极沟道部分,并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间,并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。
    • 10. 发明申请
    • THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
    • 薄膜晶体管和使用其的显示器件
    • US20120097965A1
    • 2012-04-26
    • US13072625
    • 2011-03-25
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • Jae-Min ShinJi-Yong ParkKyung-Min Park
    • H01L29/786
    • H01L29/78621H01L27/1285H01L29/78696
    • In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.
    • 在薄膜晶体管和具有该薄膜晶体管的显示装置中,根据示例性实施例的薄膜晶体管包括:半导体层,包括沟道区,源极区,漏极区,光掺杂源极区和 光掺杂漏区; 栅电极与沟道区重叠; 源极接触源区; 漏极与漏区接触。 沟道区域包括主沟道部分,源极沟道部分和漏极沟道部分,并且源极沟道部分和漏极沟道部分从主沟道部分延伸并彼此分离。 光掺杂源极区域设置在源极沟道部分和源极区域之间,并且掺杂漏极区域设置在漏极沟道部分和漏极区域之间。