专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070064757A1 Avalanche quantum intersubband transition semiconductor laser 审中-公开
标题翻译：雪崩量子子带内过渡半导体激光器
公开(公告)号：US20070064757A1
公开(公告)日：2007-03-22
申请号：US11492920
申请日：2006-07-26
申请人： Gyung Ock Kim , In Gyoo Kim , Ki Joong Lee , Cheol Kyun Lee
发明人： Gyung Ock Kim , In Gyoo Kim , Ki Joong Lee , Cheol Kyun Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00
摘要： Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a unit-cell structure, which is comprised of a carrier-multiplication layer structure for multiplying carriers, a carrier guide layer structure, and an QW active region to which carriers are injected, wherein intersubband optical radiative transitions of the carriers occur. Here, the carriers multiplied while passing though the carrier-multiplication layer structure, and injected into a optical transition level of the QW active region can achieve the high population inversion effectively, thereby high laser output power can be obtained with less stacked compact structure.
摘要翻译：提供了一种雪崩量子子带内过渡半导体激光器。激光器包括：形成在半导体衬底上的第一覆层，第一波导层，有源区，第二波导层和第二覆层，其中有源区由单元的多个堆叠（周期）组成 - 单元结构，其由用于乘法器的载波倍增层结构，载波引导层结构和注入载流子的QW有源区组成，其中载波的子带间光辐射跃迁发生。这里，载波在通过载波倍增层结构的同时相乘，并且注入到QW有源区的光跃迁电平中可以有效地实现高群体反转，从而可以获得较小的堆叠紧凑结构的高激光输出功率。

2. 发明授权

US06992360B2 Photodetector integratable light coupling apparatus 失效
标题翻译：光电检测器可整合光耦合装置
公开(公告)号：US06992360B2
公开(公告)日：2006-01-31
申请号：US10803885
申请日：2004-03-19
申请人： In Gyoo Kim , Gyung Ock Kim
发明人： In Gyoo Kim , Gyung Ock Kim
IPC分类号： H01L31/0232
CPC分类号： G02B6/12002 , G02B6/4203 , H01L31/0232
摘要： Provided is a light coupling apparatus that forms an etch structure complex comprising a total reflection surface/an anti-reflection surface within a substrate to improve coupling efficiency with incident light and responsivity of a photodetector device, whereby a surface-illuminated photodetector or an edge-coupled photodetector are all integratable, and it is possible to reduce the degree of difficulty during packaging and to improve the responsivity of the photodetector at low costs.
摘要翻译：提供一种光耦合装置，其形成包括基板内的全反射面/抗反射面的蚀刻结构复合体，以提高与入射光的耦合效率和光检测器装置的响应度，由此表面照明光电检测器或边缘 - 耦合光电检测器都是可整合的，并且可以降低封装期间的难度，并且以低成本提高光电检测器的响应度。

3. 发明授权

US08859319B2 Methods of forming photo detectors 有权
标题翻译：形成光电检测器的方法
公开(公告)号：US08859319B2
公开(公告)日：2014-10-14
申请号：US13612736
申请日：2012-09-12
申请人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
发明人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
摘要： Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
摘要翻译：提供了形成光电检测器的方法。该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

4. 发明申请

US20120126357A1 LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：光检测装置及其制造方法
公开(公告)号：US20120126357A1
公开(公告)日：2012-05-24
申请号：US13284818
申请日：2011-10-28
申请人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
发明人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L31/102 , H01L31/18
CPC分类号： H01L31/102 , H01L31/18
摘要： Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.
摘要翻译：提供了光检测装置及其制造方法。光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

5. 发明授权

US08948224B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08948224B2
公开(公告)日：2015-02-03
申请号：US13545889
申请日：2012-07-10
申请人： In Gyoo Kim , Gyungock Kim , Sang Hoon Kim , JiHo Joo , Ki Seok Jang
发明人： In Gyoo Kim , Gyungock Kim , Sang Hoon Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L21/00
CPC分类号： H01S5/021 , H01S3/0637 , H01S5/0205 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/125 , H01S5/2272 , H01S5/3027
摘要： The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.
摘要翻译：本发明构思提供了半导体激光器件及其制造方法。根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

6. 发明申请

US20110133187A1 PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：相片检测器及其制造方法
公开(公告)号：US20110133187A1
公开(公告)日：2011-06-09
申请号：US12765705
申请日：2010-04-22
申请人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
发明人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
IPC分类号： H01L31/0256 , H01L31/18 , H01L31/0232
CPC分类号： G02B6/12004 , G02B2006/12176 , G02B2006/12188 , H01L31/105 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.
摘要翻译：提供了一种光电检测器的制造方法。该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

7. 发明授权

US08288185B2 Semiconductor devices and methods of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US08288185B2
公开(公告)日：2012-10-16
申请号：US12788542
申请日：2010-05-27
申请人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要： Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译：提供半导体器件及其形成方法。根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案埋入氧化物层以暴露第一掩埋氧化物层。一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

8. 发明申请

US20110135252A1 SILICON PHOTONICS CHIP 审中-公开
标题翻译：硅胶片
公开(公告)号：US20110135252A1
公开(公告)日：2011-06-09
申请号：US12816323
申请日：2010-06-15
申请人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
发明人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
IPC分类号： G02B6/30 , G02B6/10
CPC分类号： G02B6/43 , G02B6/262 , G02B6/4292
摘要： Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.
摘要翻译：提供了与发光器件热分离的硅光子芯片。硅光子芯片包括集成在硅衬底上的光电器件。光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。信号光产生装置与光电装置热分离，并与光电装置光学连接。

9. 发明申请

US20110058764A1 ELECTRO-OPTIC MODULATING DEVICE 有权
标题翻译：电光调制装置
公开(公告)号：US20110058764A1
公开(公告)日：2011-03-10
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

10. 发明授权

US08761553B2 Optical network structures for multi-core central processor unit 有权
标题翻译：多核中央处理器单元的光网络结构
公开(公告)号：US08761553B2
公开(公告)日：2014-06-24
申请号：US13302371
申请日：2011-11-22
申请人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
发明人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要： Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译：提供了一种光网络结构。为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式