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1. 发明授权

US5982083A Cathode for electron tube 失效
标题翻译：电子管阴极
公开(公告)号：US5982083A
公开(公告)日：1999-11-09
申请号：US744453
申请日：1996-11-07
申请人： Gyu-Nam Ju , Jong-Seo Choi , Keun-Bae Kim , Kwang-Min Lee , Kwi-Seok Choi , Su-Chan Lee , Sang-Jin Lee
发明人： Gyu-Nam Ju , Jong-Seo Choi , Keun-Bae Kim , Kwang-Min Lee , Kwi-Seok Choi , Su-Chan Lee , Sang-Jin Lee
IPC分类号： H01J1/142 , H01J1/13
CPC分类号： H01J1/142
摘要： A cathode for an electron tube includes a layer of a electron emitting substance containing alkaline earth metal oxides containing 0.01--20.0 wt % of both a lanthanum compound and a magnesium compound or a lanthanum-magnesium compound disposed on a base metal including nickel as a major component and tungsten as a minor component. The tungsten prevents embrittlement and ensures a continuing supply of fill barium in the electron-emitting substance. The cathode enjoys full interchangeability with the conventional oxide cathode and a 15-30% longer life span.
摘要翻译：电子管的阴极包括含有碱土金属氧化物的层，所述碱土金属氧化物含有0.01-20.0重量％的镧化合物和镁化合物，或镧 - 镁化合物，其配置在包含镍作为主要的贱金属组分和钨作为次要组分。钨防止脆化并确保在电子发射物质中持续供应填充钡。阴极与常规氧化物阴极完全互换，寿命长达15-30％。

2. 发明授权

US06720729B1 Field emission display with electron emission member and alignment member 失效
标题翻译：具有电子发射部件和对准部件的场发射显示
公开(公告)号：US06720729B1
公开(公告)日：2004-04-13
申请号：US09525505
申请日：2000-03-15
申请人： Kwi-Seok Choi , Sang-Jin Lee , Jae-Myung Kim , Chang-Wook Kim , Joong-Woo Nam
发明人： Kwi-Seok Choi , Sang-Jin Lee , Jae-Myung Kim , Chang-Wook Kim , Joong-Woo Nam
IPC分类号： H01J162
CPC分类号： H01J1/3048 , H01J31/123
摘要： A field emission display has a cathode, an emitter formed on the cathode, and an anode spaced apart from the cathode at a predetermined distance. The emitter includes an electron emission member having a longitudinal dimension, and an alignment member for aligning the electron emission member. The alignment member is formed with a magnetic material. The electron emission member is aligned by the alignment member such that the longitudinal dimension of the electron emission member is vertically extended from the cathode toward the anode. The electron emission member may be formed with carbon fibers or graphite particles. The magnetic material is coated on the surface of the carbon fibers or incorporated into the internal structure of the carbon fibers.
摘要翻译：场致发射显示器具有阴极，在阴极上形成的发射体和与阴极间隔开预定距离的阳极。发射器包括具有纵向尺寸的电子发射部件和用于对准电子发射部件的对准部件。对准构件形成有磁性材料。电子发射部件由对准部件对准，使得电子发射部件的纵向尺寸从阴极向阳极垂直延伸。电子发射构件可以由碳纤维或石墨颗粒形成。将磁性材料涂覆在碳纤维的表面上或并入碳纤维的内部结构中。

3. 发明授权

US6059623A Method of manufacturing a triode field emission display device that maintains a constant distance between a grid and a cathode electrode 失效
标题翻译：制造在栅极和阴极之间保持恒定距离的三极管场致发射显示装置的方法
公开(公告)号：US6059623A
公开(公告)日：2000-05-09
申请号：US25579
申请日：1998-02-18
申请人： Jae-Myung Kim , Kwi-Seok Choi , Sang-Jin Lee , Joong-Woo Nam
发明人： Jae-Myung Kim , Kwi-Seok Choi , Sang-Jin Lee , Joong-Woo Nam
IPC分类号： H01J9/02 , H01J9/00 , H01J9/12
CPC分类号： H01J9/025
摘要： A method for manufacturing a triode field emission display device. First a predetermined pattern of cathode electrode is formed on a supporting substrate. A predetermined pattern of graphite layer is formed on the cathode electrode. An insulating layer is formed around the cathode electrode on the supporting substrate. A protecting resin layer is coated and hardened on the graphite layer. A predetermined pattern of grid is formed on the insulating layer. Finally, The protecting resin layer is thermally decomposed such that a distance between an inner circumference of the grid and an outer circumference of the graphite layer maintains constantly.
摘要翻译：一种三极管场致发射显示装置的制造方法。首先，在支撑基板上形成阴极电极的规定图案。在阴极上形成石墨层的预定图案。在支撑基板上的阴极周围形成绝缘层。在石墨层上涂覆并硬化保护树脂层。绝缘层上形成有格栅的预定图案。最后，保护树脂层被热分解，使得网格的内周与石墨层的外周之间的距离保持恒定。

4. 发明授权

US6146230A Composition for electron emitter of field emission display and method for producing electron emitter using the same 有权
标题翻译：场发射显示用电子发射体的组成及使用其的电子发射体的制造方法
公开(公告)号：US6146230A
公开(公告)日：2000-11-14
申请号：US405613
申请日：1999-09-24
申请人： Chang-Wook Kim , Kwi-Seok Choi , Sang-Jin Lee , Jae-Myung Kim , Joong-Woo Nam
发明人： Chang-Wook Kim , Kwi-Seok Choi , Sang-Jin Lee , Jae-Myung Kim , Joong-Woo Nam
IPC分类号： G09F9/00 , G09F9/30 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3048
摘要： An electron emitter composition comprising electron emitting materials, dispersion agent, binder, and pure water is provided.An electron emitter of an FED is produced by the steps of forming a photoresist layer by coating and drying a photoresist composition on an electrode formed on a back plate (cathode plate); exposing and developing the photoresist layer into a predetermined pattern using a mask; forming an electron emitting layer by coating and drying an electron emitter composition consisting of electron emitting materials, a binder, a dispersion agent, and pure water on the developed photoresist layer; exposing the photoresist layer by etching the electron emitting layer; and washing and drying it after stripping the exposed photoresist layer.
摘要翻译：提供了包含电子发射材料，分散剂，粘合剂和纯水的电子发射体组合物。通过在形成在背板（阴极板）上的电极上涂布和干燥光致抗蚀剂组合物来形成光致抗蚀剂层的步骤来制造FED的电子发射体; 使用掩模将光致抗蚀剂层曝光和显影成预定图案; 通过在显影的光致抗蚀剂层上涂布和干燥由电子发射材料，粘合剂，分散剂和纯水组成的电子发射体组合物形成电子发射层; 通过蚀刻电子发射层来曝光光致抗蚀剂层; 并在剥离曝光的光致抗蚀剂层之后对其进行洗涤和干燥。

5. 发明授权

US09068231B2 Method for screening cancer therapeutic agent using galectin-3, GSK-3β, and fascin-1 有权
标题翻译：使用半乳凝素-3，GSK-3和bgr以及肌成束蛋白-1筛选癌症治疗剂的方法
公开(公告)号：US09068231B2
公开(公告)日：2015-06-30
申请号：US12901337
申请日：2010-10-08
申请人： Kyung-Hee Chun , Seok-Jun Kim , Teak-Chin Cheong , Il-Ju Choi , Yeon Su Lee , Sang-Jin Lee
发明人： Kyung-Hee Chun , Seok-Jun Kim , Teak-Chin Cheong , Il-Ju Choi , Yeon Su Lee , Sang-Jin Lee
IPC分类号： C12Q1/00 , C12Q1/68 , G01N33/53 , G01N33/50 , G01N33/68
CPC分类号： C12Q1/6886 , C12N15/1138 , C12N2310/14 , C12N2320/10 , C12Q2600/136 , G01N33/5011 , G01N33/6845 , G01N2333/4724 , G01N2333/9121 , G01N2440/14 , G01N2500/02 , G01N2500/04
摘要： Disclosed is a method for screening a novel cancer therapeutic agent. The cancer therapeutic agent exhibits down-regulation of galectin-3 and fascin-1 or interferes with the interaction between galectin-3 and GSK-3β.
摘要翻译：公开了一种筛选新型癌症治疗剂的方法。癌症治疗剂显示半乳凝素-3和肌成束蛋白-1的下调或干扰半乳凝素-3和GSK-3与bgr之间的相互作用。

6. 发明授权

US08508017B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US08508017B2
公开(公告)日：2013-08-13
申请号：US13067833
申请日：2011-06-29
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： H01L21/70 , H01L23/58
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
摘要翻译：提供了提高生产率的测试设备和集成电路。根据示例实施例，测试设备可以包括具有第一测试元件的第一测试区域和具有限定在半导体衬底上的第二测试元件的第二测试区域。第一测试元件可以包括半导体衬底中的一对第一次级测试区域和一对第一测试栅极线。第一测试栅极线之一可以与第一次级测试区域中的一个重叠，而另一个第一测试栅极线可能与另一个第一次级测试区域重叠。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括对应于该对第一次级测试区域对和该对第一测试栅极线对的结构。

7. 发明申请

US20130095364A1 SECONDARY BATTERY 有权
标题翻译：二次电池
公开(公告)号：US20130095364A1
公开(公告)日：2013-04-18
申请号：US13475838
申请日：2012-05-18
申请人： Jun-Sun Yong , Chang-Seob Kim , Sang-Jin Lee , Sae-Weon Roh , Sang-Jin Park
发明人： Jun-Sun Yong , Chang-Seob Kim , Sang-Jin Lee , Sae-Weon Roh , Sang-Jin Park
IPC分类号： H01M2/30 , H01M10/50 , H01M2/02
CPC分类号： H01M2/02 , H01M2/04 , H01M2/0404 , H01M2/0473 , H01M2/06 , H01M2/30 , H01M2/34
摘要： A secondary battery including: an electrode assembly; a case containing the electrode assembly; a cap plate covering an opening of the case; a safety device on the cap plate and including a first lead; and an electrode terminal electrically connecting the electrode assembly and the first lead, the cap plate including a conductive member and an insulating portion, and the first lead is supported on the insulating portion, and the conductive member and the insulating portion being integrally formed.
摘要翻译：一种二次电池，包括：电极组件; 包含电极组件的壳体; 覆盖所述壳体的开口的盖板; 盖板上的安全装置，包括第一引线; 以及电极端子，其电连接所述电极组件和所述第一引线，所述盖板包括导电构件和绝缘部，所述第一引线被支撑在所述绝缘部上，并且所述导电构件和所述绝缘部一体地形成。

8. 发明授权

US08258805B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US08258805B2
公开(公告)日：2012-09-04
申请号：US12458535
申请日：2009-07-15
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： G01R31/26 , H01L23/58
CPC分类号： H01L22/34 , G11C11/41 , G11C29/50
摘要： A test device and a semiconductor integrated circuit are provided. The test device may include a first test region and a second test region defined on a semiconductor substrate. The first test region may include a first test element and the second region may include a second test element. The first test element may include a pair of first secondary test regions in the semiconductor substrate extending in a first direction. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions.
摘要翻译：提供了一种测试装置和半导体集成电路。测试装置可以包括限定在半导体衬底上的第一测试区域和第二测试区域。第一测试区域可以包括第一测试元件，并且第二区域可以包括第二测试元件。第一测试元件可以包括在第一方向上延伸的半导体衬底中的一对第一次级测试区域。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括与该对第一次测试区对应的结构。

9. 发明申请

US20110260161A1 Test device and semiconductor integrated circuit device 有权
公开(公告)号：US20110260161A1
公开(公告)日：2011-10-27
申请号：US13067833
申请日：2011-06-29
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： H01L23/544
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.

10. 发明授权

US07994811B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US07994811B2
公开(公告)日：2011-08-09
申请号：US12385117
申请日：2009-03-31
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： G01R31/02
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
摘要翻译：提供了提高生产率的测试设备和集成电路。根据示例实施例，测试设备可以包括具有第一测试元件的第一测试区域和具有限定在半导体衬底上的第二测试元件的第二测试区域。第一测试元件可以包括半导体衬底中的一对第一次级测试区域和一对第一测试栅极线。第一测试栅极线之一可以与第一次级测试区域中的一个重叠，而另一个第一测试栅极线可能与另一个第一次级测试区域重叠。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括对应于该对第一次级测试区域对和该对第一测试栅极线对的结构。

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