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1. 发明申请

US20120326110A1 PHASE CHANGE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20120326110A1
公开(公告)日：2012-12-27
申请号：US13495178
申请日：2012-06-13
申请人： Gyu-Hwan OH , Byoung-Jae Bae , Dong-Hyun Im , Doo-Hwan Park
发明人： Gyu-Hwan OH , Byoung-Jae Bae , Dong-Hyun Im , Doo-Hwan Park
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2409 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.
摘要翻译：相变存储器件包括衬底上的杂质区域，有源区域中的杂质区域，至少部分地埋在杂质区域中的金属硅化物图案，杂质区域上的二极管，二极管上的下电极，下电极上的相变层图案，以及相变层图案上的上电极。

2. 发明申请

US20120040508A1 Method of Forming Semiconductor Device Having Self-Aligned Plug 有权
标题翻译：形成具有自对准插头的半导体器件的方法
公开(公告)号：US20120040508A1
公开(公告)日：2012-02-16
申请号：US13188981
申请日：2011-07-22
申请人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
发明人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
IPC分类号： H01L47/00
CPC分类号： H01L45/1683 , H01L27/2463 , H01L45/06
摘要： A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.
摘要翻译：形成基板上的导电图案。形成具有露出导电图案的开口的绝缘层。底部电极形成在导电图案和开口的第一侧壁上。在底部电极和开口的第二侧壁上形成间隔物。间隔件和底部电极形成为低于绝缘层的顶表面。数据存储插头形成在底部电极和间隔件上。数据存储插头具有与底部电极的侧壁对准的第一侧壁和与间隔件的侧壁对准的第二侧壁。在数据存储插头上形成位线。

3. 发明授权

US08680500B2 Phase change memory devices having buried metal silicide patterns 有权
标题翻译：具有埋入金属硅化物图案的相变存储器件
公开(公告)号：US08680500B2
公开(公告)日：2014-03-25
申请号：US13495178
申请日：2012-06-13
申请人： Gyu-Hwan Oh , Byoung-Jae Bae , Dong-Hyun Im , Doo-Hwan Park
发明人： Gyu-Hwan Oh , Byoung-Jae Bae , Dong-Hyun Im , Doo-Hwan Park
IPC分类号： H01L29/02 , H01L47/00 , H01L27/148 , H01L29/768
CPC分类号： H01L45/06 , H01L27/2409 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.
摘要翻译：相变存储器件包括衬底上的杂质区域，有源区域中的杂质区域，至少部分地埋在杂质区域中的金属硅化物图案，杂质区域上的二极管，二极管上的下电极，下电极上的相变层图案，以及相变层图案上的上电极。

4. 发明授权

US08507353B2 Method of forming semiconductor device having self-aligned plug 有权
标题翻译：形成具有自对准插头的半导体器件的方法
公开(公告)号：US08507353B2
公开(公告)日：2013-08-13
申请号：US13188981
申请日：2011-07-22
申请人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
发明人： Gyu-Hwan Oh , Sung-Lae Cho , Byoung-Jae Bae , Ik-Soo Kim , Dong-Hyun Im , Doo-Hwan Park , Kyoung-Ha Eom , Sung-Un Kwon , Chul-Ho Shin , Sang-Sup Jeong
IPC分类号： H01L21/20 , H01L21/8244
CPC分类号： H01L45/1683 , H01L27/2463 , H01L45/06
摘要： A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.
摘要翻译：形成基板上的导电图案。形成具有露出导电图案的开口的绝缘层。底部电极形成在导电图案和开口的第一侧壁上。在底部电极和开口的第二侧壁上形成间隔物。间隔件和底部电极形成为低于绝缘层的顶表面。数据存储插头形成在底部电极和间隔件上。数据存储插头具有与底部电极的侧壁对准的第一侧壁和与间隔件的侧壁对准的第二侧壁。在数据存储插头上形成位线。

5. 发明申请

US20130126510A1 NON-VOLATILE MEMORY DEVICES HAVING DUAL HEATER CONFIGURATIONS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有双加热器配置的非易失性存储器件及其制造方法
公开(公告)号：US20130126510A1
公开(公告)日：2013-05-23
申请号：US13547663
申请日：2012-07-12
申请人： Gyu-Hwan OH , Doo-Hwan Park , Young-Kuk Kim
发明人： Gyu-Hwan OH , Doo-Hwan Park , Young-Kuk Kim
IPC分类号： H05B3/00
CPC分类号： H01L45/1233 , H01L27/0296 , H01L27/1021 , H01L27/2409 , H01L45/06 , H01L45/1246 , H01L45/126 , H01L45/144 , H01L45/145 , H01L45/1683 , H05B3/141
摘要： A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括耦合在存储器件的第一和第二导线之间的数据存储结构。数据存储结构包括依次堆叠的导电下加热器元件，数据存储模式和导电上加热器元件。数据存储图案的至少一个侧壁表面与上述上加热器元件的侧壁表面和下加热器元件的侧壁表面共面。还讨论了相关的制造方法。

6. 发明授权

US09196827B2 Non-volatile memory devices having dual heater configurations and methods of fabricating the same 有权
标题翻译：具有双重加热器配置的非易失性存储器件及其制造方法
公开(公告)号：US09196827B2
公开(公告)日：2015-11-24
申请号：US13547663
申请日：2012-07-12
申请人： Gyu-Hwan Oh , Doo-Hwan Park , Young-Kuk Kim
发明人： Gyu-Hwan Oh , Doo-Hwan Park , Young-Kuk Kim
IPC分类号： H05B3/00 , H01L45/00 , H05B3/14 , H01L27/02 , H01L27/102 , H01L27/24
CPC分类号： H01L45/1233 , H01L27/0296 , H01L27/1021 , H01L27/2409 , H01L45/06 , H01L45/1246 , H01L45/126 , H01L45/144 , H01L45/145 , H01L45/1683 , H05B3/141
摘要： A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.
摘要翻译：非易失性存储器件包括耦合在存储器件的第一和第二导线之间的数据存储结构。数据存储结构包括依次堆叠的导电下加热器元件，数据存储模式和导电上加热器元件。数据存储图案的至少一个侧壁表面与上述上加热器元件的侧壁表面和下加热器元件的侧壁表面共面。还讨论了相关的制造方法。

7. 发明授权

US08872148B2 Phase-change memory devices 有权
标题翻译：相变存储器件
公开(公告)号：US08872148B2
公开(公告)日：2014-10-28
申请号：US13735180
申请日：2013-01-07
申请人： Doo-Hwan Park , Gyu-Hwan Oh , Jeong-Min Park , Kyung-Min Chung
发明人： Doo-Hwan Park , Gyu-Hwan Oh , Jeong-Min Park , Kyung-Min Chung
IPC分类号： H01L27/10 , H01L45/00 , H01L27/24
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A phase-change memory device includes a diode, a plug, a doping layer pattern, a phase-change layer pattern and an upper electrode. The diode is disposed on a substrate. The plug is disposed on the diode and has a bottom surface whose area is equal to the area of a top surface of the diode. The plug is formed of metal or a conductive metallic compound. The doping layer pattern is disposed on the plug and has a bottom surface whose area is equal to the area of a top surface of the plug, and includes the same metal or conductive metallic compound as the plug. The phase-change layer pattern is disposed on the doping layer pattern. The upper electrode is disposed on the phase-change layer pattern.
摘要翻译：相变存储器件包括二极管，插头，掺杂层图案，相变层图案和上电极。二极管设置在基板上。插头设置在二极管上，并具有面积等于二极管顶表面面积的底面。插头由金属或导电金属化合物形成。掺杂层图案设置在插塞上，并且具有面积等于插头顶面的面积的底面，并且包括与插头相同的金属或导电金属化合物。相变层图案设置在掺杂层图案上。上电极配置在相变层图案上。

8. 发明授权

US08557627B2 Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same 有权
标题翻译：形成相变层的方法和制造包括该相变层的相变存储器件的方法
公开(公告)号：US08557627B2
公开(公告)日：2013-10-15
申请号：US13752310
申请日：2013-01-28
申请人： Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
发明人： Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
IPC分类号： H01L29/02
CPC分类号： H01L45/1625 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要翻译：相变结构包括第一相变材料层图案和第二相变材料层图案。第一相变材料层图案可以部分地填充微小结构，并且第二相变材料层图案可以完全填充微小结构。第一相变材料层图案可以包括第一相变材料，并且第二相变材料层图案可以包括具有与第一相变材料的组成显着不同的组成的第二相变材料。

9. 发明申请

US20130143380A1 METHODS OF FORMING A PHASE CHANGE LAYER AND METHODS OF FABRICATING A PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：形成相位变化层的方法及其制造相位改变记忆装置的方法
公开(公告)号：US20130143380A1
公开(公告)日：2013-06-06
申请号：US13752310
申请日：2013-01-28
申请人： Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
发明人： Jin-Ho Oh , Jeong-Hee Park , Man-Sug Kang , Byoung-Deog Choi , Gyu-Hwan Oh , Hye-Young Park , Doo-Hwan Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要翻译：相变结构包括第一相变材料层图案和第二相变材料层图案。第一相变材料层图案可以部分地填充微小结构，并且第二相变材料层图案可以完全填充微小结构。第一相变材料层图案可以包括第一相变材料，并且第二相变材料层图案可以包括具有与第一相变材料的组成显着不同的组成的第二相变材料。

10. 发明申请

US20130102150A1 METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE HAVING SMALL CONTACT AND RELATED DEVICES 有权
标题翻译：制造具有小型接触器和相关器件的非易失性存储器件的方法
公开(公告)号：US20130102150A1
公开(公告)日：2013-04-25
申请号：US13494206
申请日：2012-06-12
申请人： Gyu-Hwan Oh , Doo-Hwan Park
发明人： Gyu-Hwan Oh , Doo-Hwan Park
IPC分类号： H01L21/768
CPC分类号： H01L45/04 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1253 , H01L45/144 , H01L45/147 , H01L45/1683
摘要： A sacrificial pattern is formed to partially cover the pipe-shaped electrode. A sacrificial spacer is formed on a lateral surface of the sacrificial pattern. The sacrificial spacer extends across the pipe-shaped electrode. The sacrificial spacer has a first side and a second side opposite the first side. The sacrificial pattern is removed to expose the pipe-shaped electrode proximal to the first and second sides of the sacrificial spacer. The pipe-shaped electrode exposed on both sides of the sacrificial spacer may be primarily trimmed. The pipe-shaped electrode is retained under the sacrificial spacer to form a first portion, and a second portion facing the first portion. The second portion of the pipe-shaped electrode is secondarily trimmed. The sacrificial spacer is removed to expose the first portion of the pipe-shaped electrode. A data storage plug is formed on the first portion of the pipe-shaped electrode.
摘要翻译：形成牺牲图案以部分地覆盖管状电极。在牺牲图案的侧表面上形成牺牲隔离物。牺牲隔离物跨越管状电极延伸。牺牲隔离物具有与第一侧相对的第一侧和第二侧。消除牺牲图案以将管状电极暴露在牺牲间隔物的第一和第二侧附近。暴露在牺牲隔离物两侧的管状电极可以主要被修整。管状电极被保持在牺牲隔离物下方以形成第一部分，以及面向第一部分的第二部分。管状电极的第二部分被二次修剪。除去牺牲隔离物以露出管状电极的第一部分。数据存储插头形成在管状电极的第一部分上。

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