专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070096074A1 Electrically rewritable non-volatile memory element and method of manufacturing the same 有权
标题翻译：电可重写非易失性存储元件及其制造方法
公开(公告)号：US20070096074A1
公开(公告)日：2007-05-03
申请号：US11264129
申请日：2005-11-02
申请人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
发明人： Isamu Asano , Natsuki Sato , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj , Stephen Hudgens
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13. Therefore, when a pore 14a is formed by dielectric breakdown in a thin-film insulation layer 14 and the vicinity is used as a heating region, the amount of heat escaping to the bottom electrode 13 is decreased, resulting in higher heating efficiency.
摘要翻译：非易失性存储元件包括具有第一通孔11a的第一层间绝缘层11，具有形成在第一层间绝缘层11上的第二通孔12a的第二层间绝缘层12，在第一通孔11中，设置在第二通孔12中的包含相变材料的记录层15，设置在第二层间绝缘层12上的顶部电极16和形成在第二通孔12的底部电极之间的薄膜绝缘层14 13和记录层15。根据本发明，埋在第一通孔11a中的底部电极13的直径D 1小于第二通孔12a的直径D 2，从而降低底部电极13的热容量。因此，当通过薄膜绝缘层14中的电介质击穿形成孔14a并且将其附近用作加热区域时，逸出到底部电极13的热量减少，导致更高的加热效率。

2. 发明授权

US07786462B2 Chalcogenide devices exhibiting stable operation from the as-fabricated state 有权
标题翻译：表现出从制造状态稳定运行的硫族化物装置
公开(公告)号：US07786462B2
公开(公告)日：2010-08-31
申请号：US11975615
申请日：2007-10-19
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L29/02 , H01L29/06 , G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5硫族化物组合物是稀的。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

3. 发明申请

US20100084625A1 Memory Device 有权
标题翻译：存储设备
公开(公告)号：US20100084625A1
公开(公告)日：2010-04-08
申请号：US12244421
申请日：2008-10-02
申请人： Guy Wicker , Wolodymyr Czubatyj
发明人： Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L29/18 , H01L47/00
CPC分类号： H01L45/04 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144
摘要： An electrical device includes a first electrode and a second electrode. A first active material is between the first electrode and second electrode. A second active material is between the first electrode and second electrode. A nonlinear electrode material is disposed between the first electrode and the second electrode. The nonlinear electrode material is electrically in series with the first electrode, the first active material, the second active material, and the second electrode. The first electrode and the first active material undergo no chemical or electrochemical reaction when current passes between the first electrode and the second electrode.
摘要翻译：电气装置包括第一电极和第二电极。第一活性材料在第一电极和第二电极之间。第二活性材料在第一电极和第二电极之间。非线性电极材料设置在第一电极和第二电极之间。非线性电极材料与第一电极，第一活性材料，第二活性材料和第二电极电串联。当电流通过第一电极和第二电极之间时，第一电极和第一活性材料不经历化学或电化学反应。

4. 发明申请

US20070034851A1 Chalcogenide devices and materials having reduced germanium or telluruim content 有权
标题翻译：硫族化物装置和具有降低的锗或碲化物含量的材料
公开(公告)号：US20070034851A1
公开(公告)日：2007-02-15
申请号：US11301211
申请日：2005-12-12
申请人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device exhibiting fast operation (short set pulse times) over an extended range of reset state resistances. Electrical devices containing the instant chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. The instant devices thus provide for high resistance contrast and improved readability of memory states while preserving fast operational speeds for the device. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. In one embodiment, the atomic concentration of Ge is between 11% and 22%, the atomic concentration of Sb is between 22% and 65%, and the atomic concentration of Te is between 28% and 55%. In a preferred embodiment, the atomic concentration of Ge is between 15% and 18%, the atomic concentration of Sb is between 32% and 35%, and the atomic concentration of Te is between 48% and 51%.
摘要翻译：硫化物材料和硫族化物存储器件在复位状态电阻的延长范围内表现出快速操作（短脉冲时间）。包含瞬时硫族化物材料的电气装置允许从复位状态到设定状态的快速转换以及具有高电阻比的置位状态。因此，即时设备提供高电阻对比度和改善存储器状态的可读性，同时保持设备的快速操作速度。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的硫族化合物组合物。在一个实施方案中，Ge的原子浓度为11％至22％，Sb的原子浓度为22％至65％，Te的原子浓度为28％至55％。在优选的实施方式中，Ge的原子浓度为15％〜18％，Sb的原子浓度为32％〜35％，Te的原子浓度为48％〜51％。

5. 发明申请

US20100321991A1 Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State 审中-公开
标题翻译：从制造国展示稳定运行的硫族化物装置
公开(公告)号：US20100321991A1
公开(公告)日：2010-12-23
申请号：US12871975
申请日：2010-08-31
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5硫族化物组合物是稀的。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

6. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

7. 发明申请

US20090166601A1 Non-volatile programmable variable resistance element 审中-公开
标题翻译：非易失性可编程可变电阻元件
公开(公告)号：US20090166601A1
公开(公告)日：2009-07-02
申请号：US12006390
申请日：2008-01-02
申请人： Wolodymyr Czubatyj , Guy Wicker
发明人： Wolodymyr Czubatyj , Guy Wicker
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/128 , H01L45/144
摘要： A phase-change memory element exhibits a non-uniform temperature profile in the phase-change material, resulting in a non-uniform temperature profile. The non-uniform temperature profile causes non-uniform growth of a programmed volume, resulting in a gradual R-I characteristic. The phase-change material may be a chalcogenide material.
摘要翻译：相变存储元件在相变材料中表现出不均匀的温度分布，导致不均匀的温度分布。不均匀的温度分布导致编程体积的不均匀生长，导致逐渐的R-I特性。相变材料可以是硫族化物材料。

8. 发明授权

US07525117B2 Chalcogenide devices and materials having reduced germanium or telluruim content 有权
标题翻译：硫族化物装置和具有降低的锗或碲化物含量的材料
公开(公告)号：US07525117B2
公开(公告)日：2009-04-28
申请号：US11301211
申请日：2005-12-12
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. The devices provide for high resistance contrast of memory states while preserving fast operational speeds. The chalcogenide materials include Ge, Sb and Te where the Ge and/or Te content is lean relative to Ge2Sb2Te5. In one embodiment, the concentration of Ge is between 11% and 22%, the concentration of Sb is between 22% and 65%, and the concentration of Te is between 28% and 55%. In a preferred embodiment, the concentration of Ge is between 15% and 18%, the concentration of Sb is between 32% and 35%, and the concentration of Te is between 48% and 51%.
摘要翻译：在扩展的复位状态电阻范围内呈现快速操作的硫族化物材料和存储器件。含有硫族化物材料的电气装置允许从复位状态到设定状态的快速转换以及具有高电阻比的设定状态。这些器件提供高电阻对比度的存储器状态，同时保持快速的操作速度。硫族化物材料包括Ge，Sb和Te，其中Ge和/或Te含量相对于Ge 2 Sb 2 Te 5是贫的。在一个实施方案中，Ge的浓度为11％至22％，Sb的浓度为22％至65％，Te的浓度为28％至55％。在优选的实施方案中，Ge的浓度为15％至18％，Sb的浓度为32％至35％，Te的浓度为48％至51％。

9. 发明申请

US20070034850A1 Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim content 审中-公开
标题翻译：含有具有降低的锗或碲化物含量的硫族化物材料的硫族化物装置
公开(公告)号：US20070034850A1
公开(公告)日：2007-02-15
申请号：US11200466
申请日：2005-08-09
申请人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5是稀的硫族化合物组合物。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

10. 发明申请

US20060110846A1 Electrically programmable memory element with improved contacts 审中-公开
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US20060110846A1
公开(公告)日：2006-05-25
申请号：US11287833
申请日：2005-11-28
申请人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
发明人： Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev
IPC分类号： H01L21/00
CPC分类号： G11C11/5678 , G11C11/56 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A method of making an electrically programmable memory element, comprising: providing a conductive sidewall spacer; and forming a phase-change material in electrical communication with said conductive sidewall spacer.
摘要翻译：一种制造电可编程存储元件的方法，包括：提供导电侧壁间隔物; 以及形成与所述导电侧壁间隔物电连通的相变材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式