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1. 发明授权

US08664112B2 Methods for forming interconnect structures for integration of multi-layered integrated circuit devices 有权
标题翻译：形成用于集成多层集成电路器件的互连结构的方法
公开(公告)号：US08664112B2
公开(公告)日：2014-03-04
申请号：US13085122
申请日：2011-04-12
申请人： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
发明人： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
IPC分类号： H01L23/52
CPC分类号： H01L23/5283 , H01L21/76805 , H01L21/76816 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53209 , H01L23/5329 , H01L25/0657 , H01L25/50 , H01L27/105 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.
摘要翻译：半导体器件包括至少一个集成电路层，至少一个导电迹线和与至少一个导电迹线的至少一部分相邻的绝缘材料。至少一个互连结构延伸穿过所述至少一个导电迹线的一部分和所述绝缘材料的一部分，所述至少一个互连结构包括穿过所述至少一个导电迹线的横向截面尺寸，所述导电迹线与横向交叉不同通过绝缘材料的尺寸。还公开了形成包括至少一个互连结构的半导体器件的方法。

2. 发明授权

US08282999B2 Spin-on film processing using acoustic radiation pressure 有权
标题翻译：旋转胶片处理使用声辐射压力
公开(公告)号：US08282999B2
公开(公告)日：2012-10-09
申请号：US12098124
申请日：2008-04-04
申请人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
发明人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC分类号： B05D3/06 , B01J19/10 , B06B1/00 , H01L21/31
CPC分类号： H01L21/02282 , B01D19/0078 , B01F11/0071 , B05C11/02 , B05D1/005 , B05D3/12 , B08B3/12 , G03D3/04 , G03F7/162 , H01L21/31051 , H01L21/31058 , H01L21/312 , H01L21/67017 , H01L21/67092 , H01L21/6715 , H01L21/76819
摘要： An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.
摘要翻译：一种装置和方法用于将声波压力施加在展现液体形貌和溶剂蒸汽超压中以改变液体形貌的旋涂膜液体质量上。公开了其他装置和方法。

3. 发明授权

US07749327B2 Methods for treating surfaces 失效
标题翻译：表面处理方法
公开(公告)号：US07749327B2
公开(公告)日：2010-07-06
申请号：US11933770
申请日：2007-11-01
申请人： Nishant Sinha , Gurtej S. Sandhu
发明人： Nishant Sinha , Gurtej S. Sandhu
IPC分类号： B08B3/00 , B08B3/04
CPC分类号： B08B3/10 , B08B7/02 , B24C3/322 , B24C7/0007 , H01L21/02052 , H01L21/02057 , H01L21/67051
摘要： Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.
摘要翻译：一些实施方案包括用于处理表面的方法。珠和/或其他不溶物可以分散在液体载体中以形成分散体。可以跨越表面形成转印层。分散体可以指向转移层，并且不溶物可能影响转移层。冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。转移层可以是液体，并且在一些实施方案中可以是清洁溶液。

4. 发明申请

US20090114246A1 Methods For Treating Surfaces 失效
标题翻译：治疗表面的方法
公开(公告)号：US20090114246A1
公开(公告)日：2009-05-07
申请号：US11933770
申请日：2007-11-01
申请人： Nishant Sinha , Gurtej S. Sandhu
发明人： Nishant Sinha , Gurtej S. Sandhu
IPC分类号： B08B6/00 , B08B3/00
CPC分类号： B08B3/10 , B08B7/02 , B24C3/322 , B24C7/0007 , H01L21/02052 , H01L21/02057 , H01L21/67051
摘要： Some embodiments include methods for treating surfaces. Beads and/or other insolubles may be dispersed within a liquid carrier to form a dispersion. A transfer layer may be formed across a surface. The dispersion may be directed toward the transfer layer, and the insolubles may impact the transfer layer. The impacting may generate force in the transfer layer, and such force may be transferred through the transfer layer to the surface. The surface may be a surface of a semiconductor substrate, and the force may be utilized to sweep contaminants from the semiconductor substrate surface. The transfer layer may be a liquid, and in some embodiments may be a cleaning solution.
摘要翻译：一些实施方案包括用于处理表面的方法。珠和/或其他不溶物可以分散在液体载体中以形成分散体。可以跨越表面形成转印层。分散体可以指向转移层，并且不溶物可能影响转移层。冲击可能在转移层中产生力，并且这种力可以通过转移层转移到表面。表面可以是半导体衬底的表面，并且该力可用于从半导体衬底表面扫除污染物。转移层可以是液体，并且在一些实施方案中可以是清洁溶液。

5. 发明授权

US09343665B2 Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US09343665B2
公开(公告)日：2016-05-17
申请号：US12166604
申请日：2008-07-02
申请人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。含金属氧化物的材料形成在第一导电电极上。蚀刻停止材料沉积在包含金属氧化物的材料上。导电材料沉积在蚀刻停止材料上。包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。考虑其他实现。

6. 发明授权

US08721901B2 Methods of processing substrates and methods of forming conductive connections to substrates 有权
标题翻译：处理衬底的方法和形成与衬底的导电连接的方法
公开(公告)号：US08721901B2
公开(公告)日：2014-05-13
申请号：US11868331
申请日：2007-10-05
申请人： Nishant Sinha , Gurtej S. Sandhu
发明人： Nishant Sinha , Gurtej S. Sandhu
IPC分类号： H01B13/00
CPC分类号： H01L21/76879 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76849 , H01L21/76867
摘要： Embodiments disclosed include methods of processing substrates, including methods of forming conductive connections to substrates. In one embodiment, a method of processing a substrate includes forming a material to be etched over a first material of a substrate. The material to be etched and the first material are of different compositions. The material to be etched is etched in a dry etch chamber to expose the first material. After the etching, the first material is contacted with a non-oxygen-containing gas in situ within the dry etch chamber effective to form a second material physically contacting onto the first material. The second material comprises a component of the first material and a component of the gas. In one embodiment, the first material is contacted with a gas that may or may not include oxygen in situ within the dry etch chamber effective to form a conductive second material.
摘要翻译：公开的实施例包括处理衬底的方法，包括形成与衬底的导电连接的方法。在一个实施例中，处理衬底的方法包括在衬底的第一材料上形成待蚀刻的材料。待蚀刻的材料和第一种材料具有不同的组成。待蚀刻的材料在干蚀刻室中蚀刻以暴露第一材料。在蚀刻之后，第一材料在干蚀刻室内原位与非含氧气体接触，有效地形成物理接触第一材料的第二材料。第二材料包括第一材料的组分和气体的组分。在一个实施方案中，第一材料与可在干蚀刻室内原位包含氧的气体接触，有效地形成导电的第二材料。

7. 发明申请

US20110195547A1 METHODS FOR FORMING INTERCONNECT STRUCTURES FOR INTEGRATION OF MULTI LAYERED INTEGRATED CIRCUIT DEVICES 有权
标题翻译：形成多层集成电路设备集成的互连结构的方法
公开(公告)号：US20110195547A1
公开(公告)日：2011-08-11
申请号：US13085122
申请日：2011-04-12
申请人： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
发明人： Gurtej S. Sandhu , Nishant Sinha , John A. Smythe
IPC分类号： H01L21/768
CPC分类号： H01L23/5283 , H01L21/76805 , H01L21/76816 , H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L23/53209 , H01L23/5329 , H01L25/0657 , H01L25/50 , H01L27/105 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.
摘要翻译：半导体器件包括至少一个集成电路层，至少一个导电迹线和与至少一个导电迹线的至少一部分相邻的绝缘材料。至少一个互连结构延伸穿过所述至少一个导电迹线的一部分和所述绝缘材料的一部分，所述至少一个互连结构包括穿过所述至少一个导电迹线的横向截面尺寸，所述导电迹线与横向交叉不同通过绝缘材料的尺寸。还公开了形成包括至少一个互连结构的半导体器件的方法。

8. 发明授权

US07927975B2 Semiconductor material manufacture 有权
标题翻译：半导体材料制造
公开(公告)号：US07927975B2
公开(公告)日：2011-04-19
申请号：US12365734
申请日：2009-02-04
申请人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
发明人： Nishant Sinha , Gurtej S. Sandhu , John Smythe
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.
摘要翻译：电子设备，系统和方法包括结合到晶片或基板的主体区域的半导体层，其中半导体层可以使用电磁辐射结合到主体区域。公开了附加装置，系统和方法。

9. 发明授权

US07786016B2 Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide 有权
标题翻译：均匀去除氧化硅的方法和去除牺牲氧化物的方法
公开(公告)号：US07786016B2
公开(公告)日：2010-08-31
申请号：US11652218
申请日：2007-01-11
申请人： Nishant Sinha , Gurtej S. Sandhu , Joseph N. Greeley
发明人： Nishant Sinha , Gurtej S. Sandhu , Joseph N. Greeley
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/76229 , H01L21/823412 , H01L21/823481 , H01L27/11521 , H01L29/7846 , Y10S438/911
摘要： A method of substantially uniformly removing silicon oxide is disclosed. The silicon oxide to be removed includes at least one cavity therein or more than one density or strain therein. The silicon oxide having at least one cavity or more than one density or strain is exposed to a gaseous mixture of NH3 and HF and heated, to substantially uniformly remove the silicon oxide. A method of removing an exposed sacrificial layer without substantially removing exposed isolation regions using the gaseous mixture of NH3 and HF and heat is also disclosed, as is an intermediate semiconductor device structure that includes a semiconductor substrate, a sacrificial layer overlying the semiconductor substrate, a diffusion barrier overlying the sacrificial layer, and exposed isolation regions.
摘要翻译：公开了一种基本均匀地去除氧化硅的方法。要除去的氧化硅包括其中至少一个空腔或其中的多于一个密度或应变。具有至少一个空腔或多于一个密度或应变的氧化硅暴露于NH 3和HF的气体混合物中并加热，以基本均匀地除去氧化硅。还公开了使用NH 3和HF的气体混合物和热量基本上去除暴露的隔离区域去除暴露的牺牲层的方法，中间半导体器件结构包括半导体衬底，覆盖半导体衬底的牺牲层，覆盖牺牲层的扩散阻挡层和暴露的隔离区域。

10. 发明申请

US20090090692A1 Methods of Processing Substrates and Methods of Forming Conductive Connections to Substrates 有权
标题翻译：基板的加工方法与基材的导电连接方法
公开(公告)号：US20090090692A1
公开(公告)日：2009-04-09
申请号：US11868331
申请日：2007-10-05
申请人： Nishant Sinha , Gurtej S. Sandhu
发明人： Nishant Sinha , Gurtej S. Sandhu
IPC分类号： H01B13/00
CPC分类号： H01L21/76879 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76849 , H01L21/76867
摘要： Embodiments disclosed include methods of processing substrates, including methods of forming conductive connections to substrates. In one embodiment, a method of processing a substrate includes forming a material to be etched over a first material of a substrate. The material to be etched and the first material are of different compositions. The material to be etched is etched in a dry etch chamber to expose the first material. After the etching, the first material is contacted with a non-oxygen-containing gas in situ within the dry etch chamber effective to form a second material physically contacting onto the first material. The second material comprises a component of the first material and a component of the gas. In one embodiment, the first material is contacted with a gas that may or may not include oxygen in situ within the dry etch chamber effective to form a conductive second material.
摘要翻译：公开的实施例包括处理衬底的方法，包括形成与衬底的导电连接的方法。在一个实施例中，处理衬底的方法包括在衬底的第一材料上形成待蚀刻的材料。待蚀刻的材料和第一种材料具有不同的组成。待蚀刻的材料在干蚀刻室中蚀刻以暴露第一材料。在蚀刻之后，第一材料在干蚀刻室内原位与非含氧气体接触，有效地形成物理接触第一材料的第二材料。第二材料包括第一材料的组分和气体的组分。在一个实施方案中，第一材料与可在干蚀刻室内原位包含氧的气体接触，有效地形成导电的第二材料。

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