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1. 发明授权

US09368204B2 Volatile/non-volatile memory cell 有权
标题翻译：易挥发/非易失性存储单元
公开(公告)号：US09368204B2
公开(公告)日：2016-06-14
申请号：US13980559
申请日：2012-01-19
申请人： Yoann Guillemenet , Lionel Torres , Guillaume Prenat , Kholdoun Torki , Gregory Di Pendina
发明人： Yoann Guillemenet , Lionel Torres , Guillaume Prenat , Kholdoun Torki , Gregory Di Pendina
IPC分类号： G11C11/00 , G11C13/00 , G11C11/15 , G11C11/16 , G11C11/412 , H03K19/0175
CPC分类号： G11C13/0069 , G11C11/15 , G11C11/16 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C11/412 , G11C13/0002 , G11C14/0081 , G11C14/009 , H03K19/017581
摘要： The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first resistance; and a second transistor (104) coupled between a second storage node (108) and a second resistance switching element (204) programmed to have a second resistance, a control terminal of said first transistor being coupled to said second storage node, and a control terminal of said second transistor being coupled to said first storage node; and control circuitry (602) adapted to store a data value (DNV) at said first and second storage nodes by coupling said first and second storage nodes to a first supply voltage (VDD, GND), the data value being determined by the relative resistances of the first and second resistance switching elements.
摘要翻译：本发明涉及一种包括至少一个存储单元的存储器件，包括：耦合在第一存储节点（106）和被编程为具有第一电阻的第一电阻开关元件（202）之间的第一晶体管（102）以及耦合在被编程为具有第二电阻的第二存储节点（108）和第二电阻开关元件（204）之间的第二晶体管（104），所述第一晶体管的控制端耦合到所述第二存储节点，以及控制所述第二晶体管的端子耦合到所述第一存储节点; 以及适于通过将所述第一和第二存储节点耦合到第一电源电压（VDD，GND）来在所述第一和第二存储节点处存储数据值（DNV）的控制电路（602），所述数据值由相对电阻的第一和第二电阻开关元件。

2. 发明申请

US20140078810A1 LOADLESS VOLATILE/NON-VOLATILE MEMORY CELL 审中-公开
标题翻译：无负载/非易失性存储器单元
公开(公告)号：US20140078810A1
公开(公告)日：2014-03-20
申请号：US13980555
申请日：2012-01-19
申请人： Guillaume Prenat , Gregory Di Pendina , Kholdoun Torki
发明人： Guillaume Prenat , Gregory Di Pendina , Kholdoun Torki
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C11/412 , G11C13/0002 , G11C14/0081 , G11C14/009
摘要： The invention concerns a memory device comprising at least one memory cell comprising: first and second transistors (102, 104) coupled between first and second storage nodes (106, 108) respectively and a first supply voltage, a control terminal of said first transistor being coupled to said second storage node, and a control terminal of said second transistor being coupled to said first storage node; first and second resistance switching elements (202, 204) coupled in series with said first and second transistors respectively; and control circuitry (308) adapted to apply, during a programming phase of the first resistance switching element, a second supply voltage to said second storage node to active said first transistor, and then to apply said second supply voltage to said first storage node to generate a first write current (IA) through said first transistor and said first resistance switching element.
摘要翻译：本发明涉及一种包括至少一个存储单元的存储器件，包括：分别耦合在第一和第二存储节点（106,108）之间的第一和第二晶体管（102,104）和第一电源电压，所述第一晶体管的控制端为耦合到所述第二存储节点，并且所述第二晶体管的控制端耦合到所述第一存储节点; 分别与所述第一和第二晶体管串联耦合的第一和第二电阻开关元件（202,204）以及适于在所述第一电阻切换元件的编程阶段期间将第二电源电压施加到所述第二存储节点以激活所述第一晶体管的控制电路（308），然后将所述第二电源电压施加到所述第一存储节点通过所述第一晶体管和所述第一电阻开关元件产生第一写入电流（IA）。

3. 发明申请

US20140070844A1 VOLATILE/NON-VOLATILE MEMORY CELL 有权
标题翻译：挥发性/非易失性记忆细胞
公开(公告)号：US20140070844A1
公开(公告)日：2014-03-13
申请号：US13980559
申请日：2012-01-19
申请人： Yoann Guillemenet , Lionel Torres , Guillaume Prenat , Kholdoun Torki , Gregory Di Pendina
发明人： Yoann Guillemenet , Lionel Torres , Guillaume Prenat , Kholdoun Torki , Gregory Di Pendina
IPC分类号： G11C13/00 , H03K19/0175
CPC分类号： G11C13/0069 , G11C11/15 , G11C11/16 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C11/412 , G11C13/0002 , G11C14/0081 , G11C14/009 , H03K19/017581
摘要： The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first resistance; and a second transistor (104) coupled between a second storage node (108) and a second resistance switching element (204) programmed to have a second resistance, a control terminal of said first transistor being coupled to said second storage node, and a control terminal of said second transistor being coupled to said first storage node; and control circuitry (602) adapted to store a data value (DNV) at said first and second storage nodes by coupling said first and second storage nodes to a first supply voltage (VDD, GND), the data value being determined by the relative resistances of the first and second resistance switching elements.
摘要翻译：本发明涉及一种包括至少一个存储单元的存储器件，包括：耦合在第一存储节点（106）和被编程为具有第一电阻的第一电阻开关元件（202）之间的第一晶体管（102）以及耦合在被编程为具有第二电阻的第二存储节点（108）和第二电阻开关元件（204）之间的第二晶体管（104），所述第一晶体管的控制端耦合到所述第二存储节点，以及控制所述第二晶体管的端子耦合到所述第一存储节点; 以及适于通过将所述第一和第二存储节点耦合到第一电源电压（VDD，GND）来在所述第一和第二存储节点处存储数据值（DNV）的控制电路（602），所述数据值由相对电阻的第一和第二电阻开关元件。

4. 发明授权

US08443318B2 Method for modeling a magnetic tunnel junction with spin-polarized current writing 有权
标题翻译：用自旋极化电流写入建模磁性隧道结的方法
公开(公告)号：US08443318B2
公开(公告)日：2013-05-14
申请号：US12809991
申请日：2008-12-16
申请人： Guillaume Prenat , Wei Guo
发明人： Guillaume Prenat , Wei Guo
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G11C11/16 , G06F17/5036
摘要： The junction comprising a stack of at least two magnetic layers, a first layer, for example a soft magnetic layer with controllable magnetization, and a second layer, for example a hard magnetic layer with fixed magnetization, the magnetization of the soft layer being described by a uniform magnetic moment, the dynamic behavior of the junction being modeled by an equivalent electrical circuit comprising at least two coupled parts: a first part representing the stack of the layers, through which a current flows corresponding to the polarized current flowing through said layers whose resistance across its terminals depends on three voltages representing the three dimensions of the magnetic moment along three axes, modeling the tunnel effect; a second part representing the behavior of the magnetic moment, comprising three circuits each representing a dimension of the magnetic moment by the three voltages, each of the three voltages depending on the voltages in the other dimensions and on the voltage across the terminals of the stack, modeling the torque effect exerted by the polarized current on the magnetization of the soft layer.
摘要翻译：所述接合部包括至少两个磁性层的堆叠，第一层，例如具有可控磁化的软磁性层，以及第二层，例如具有固定磁化强度的硬磁性层，软层的磁化由均匀的磁矩，结点的动态行为由包括至少两个耦合部分的等效电路建模：表示层的堆叠的第一部分，电流流过对应于流过所述层的极化电流的电流其端子电阻取决于表示沿三轴的磁矩三维的三个电压，对隧道效应进行建模; 表示磁矩行为的第二部分，包括三个电路，每个电路表示三个电压的磁矩的尺寸，三个电压中的每一个取决于其它尺寸的电压和堆叠端子上的电压对由极化电流施加的扭矩效应对软层的磁化进行建模。

5. 发明申请

US20120314487A1 Magnetic Random Access Memory Devices Including Multi-Bit Cells 有权
标题翻译：包括多位单元的磁性随机存取存储器件
公开(公告)号：US20120314487A1
公开(公告)日：2012-12-13
申请号：US13158312
申请日：2011-06-10
申请人： Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
发明人： Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
IPC分类号： G11C11/416
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory (“MRAM”) cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis.
摘要翻译：磁性随机存取存储器（MRAM）单元包括：（1）具有第一磁化方向和磁各向异性轴的第一磁性层; （2）具有第二磁化方向的第二磁性层; 和（3）设置在第一磁性层和第二磁性层之间的间隔层。 MRAM单元还包括磁耦合到MRAM单元并且被配置为沿着磁场轴诱导写磁场的磁场线，并且磁各向异性轴相对于磁场轴倾斜。在写入操作期间，第一磁化方向可以在m个方向之间切换以存储对应于m个逻辑状态中的一个的数据，其中m≥2，m个方向中的至少一个相对于磁各向异性轴对准，并且至少另一个 m个方向中的一个相对于磁场轴线对准。

6. 发明授权

US08576615B2 Magnetic random access memory devices including multi-bit cells 有权
标题翻译：包括多位单元的磁性随机存取存储器件
公开(公告)号：US08576615B2
公开(公告)日：2013-11-05
申请号：US13158312
申请日：2011-06-10
申请人： Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
发明人： Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
IPC分类号： G11C11/46
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： A magnetic random access memory (“MRAM”) cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis.
摘要翻译：磁性随机存取存储器（“MRAM”）单元包括：（1）具有第一磁化方向和磁各向异性轴的第一磁性层; （2）具有第二磁化方向的第二磁性层; 和（3）设置在第一磁性层和第二磁性层之间的间隔层。 MRAM单元还包括磁耦合到MRAM单元并且被配置为沿着磁场轴诱导写磁场的磁场线，并且磁各向异性轴相对于磁场轴倾斜。在写入操作期间，第一磁化方向可以在m个方向之间切换以存储对应于m个逻辑状态中的一个的数据，其中m≥2，m个方向中的至少一个相对于磁各向异性轴对准，并且至少另一个 m个方向中的一个相对于磁场轴线对准。

7. 发明授权

US08344758B2 Magnetic device for performing a logic function 有权
标题翻译：用于执行逻辑功能的磁性装置
公开(公告)号：US08344758B2
公开(公告)日：2013-01-01
申请号：US12988276
申请日：2009-04-15
申请人： Virgile Javerliac , Guillaume Prenat
发明人： Virgile Javerliac , Guillaume Prenat
IPC分类号： H03K19/20
CPC分类号： H03K19/18 , G06F7/501 , G06F2207/4802 , H01L27/22
摘要： A device for performing a “logic function” consisting of a magnetic structure including at least a first magnetoresistive stack including a first ferromagnetic layer and a second ferromagnetic layer separated by a non-ferromagnetic interlayer and at least one first line of current situated in the vicinity of the first magnetoresistive stack and generating in the vicinity of the first stack a magnetic field when an electric current passes through it. The first line includes at least two current input points so that two currents can be added together in the first line, with the sum of the two currents being determined by the logic function.
摘要翻译：一种用于执行逻辑功能的装置，该逻辑功能包括磁结构，所述磁结构至少包括第一磁阻堆叠，所述第一磁阻堆叠包括由非铁磁中间层隔开的第一铁磁层和第二铁磁层，以及位于所述第一磁阻层附近的至少一条第一电流线第一磁阻堆叠，并且当电流通过时在第一堆叠附近产生磁场。第一行包括至少两个电流输入点，使得可以在第一行中将两个电流相加在一起，两个电流之和由逻辑功能决定。

8. 发明申请

US20110221470A1 MAGNETIC DEVICE FOR PERFORMING A "LOGIC FUNCTION" 审中-公开
标题翻译：用于执行“逻辑功能”的磁性装置
公开(公告)号：US20110221470A1
公开(公告)日：2011-09-15
申请号：US12988290
申请日：2009-04-15
申请人： Virgile Javerliac , Guillaume Prenat
发明人： Virgile Javerliac , Guillaume Prenat
IPC分类号： H03K19/18
CPC分类号： H03K19/18 , G06F7/501 , G06F2207/4802
摘要： A device for performing a “logic function” including a magnetic structure including at least one first magnetoresistive stack including a first ferromagnetic layer and a second ferromagnetic layer separated by a non-ferromagnetic interlayer, the ferromagnetic hard layer being pinned in a fixed magnetic state which serves as a reference and at least one first and one second current line belonging to a first and a second level of metallization respectively, each of the two lines generating a magnetic field in the vicinity of the first stack when a current flows therethrough. The first and second lines are disposed at various distances of the second ferromagnetic layer, the various distances being determined by the “logic function”.
摘要翻译：一种用于执行包括磁性结构的磁性结构的装置，所述磁性结构包括至少一个第一磁阻堆叠，所述第一磁阻堆叠包括由非铁磁中间层分隔的第一铁磁层和第二铁磁层，所述铁磁性硬质层被固定在固定磁性状态，分别用作参考和至少一个属于第一和第二金属化级别的第一和第二电流线，当两个线当电流流过其中时，两条线中的每条线在第一堆叠附近产生磁场。第一和第二线路设置在第二铁磁层的不同距离处，各种距离由“逻辑功能”确定。

9. 发明申请

US20110115522A1 MAGNETIC DEVICE FOR PERFORMING A LOGIC FUNCTION 有权
标题翻译：用于执行逻辑功能的磁性装置
公开(公告)号：US20110115522A1
公开(公告)日：2011-05-19
申请号：US12988276
申请日：2009-04-15
申请人： Virgile Javerliac , Guillaume Prenat
发明人： Virgile Javerliac , Guillaume Prenat
IPC分类号： H03K19/23 , H03K19/18 , H03K19/20
CPC分类号： H03K19/18 , G06F7/501 , G06F2207/4802 , H01L27/22
摘要： A device for performing a “logic function” consisting of a magnetic structure including at least a first magnetoresistive stack including a first ferromagnetic layer and a second ferromagnetic layer separated by a non-ferromagnetic interlayer and at least one first line of current situated in the vicinity of the first magnetoresistive stack and generating in the vicinity of the first stack a magnetic field when an electric current passes through it. The first line includes at least two current input points so that two currents can be added together in the first line, with the sum of the two currents being determined by the logic function.
摘要翻译：一种用于执行由包括至少第一磁阻堆叠的磁性结构组成的“逻辑功能”的装置，所述第一磁阻堆叠包括由非铁磁中间层隔开的第一铁磁层和第二铁磁层以及位于附近的至少一条第一电流线的第一磁阻堆叠，并且当电流通过时在第一堆叠附近产生磁场。第一行包括至少两个电流输入点，使得可以在第一行中将两个电流相加在一起，两个电流之和由逻辑功能决定。

10. 发明申请

US20110055794A1 Method for Modeling a Magnetic Tunnel Junction with Spin-Polarized Current Writing 有权
标题翻译：用旋转极化电流写入建立磁隧道结的方法
公开(公告)号：US20110055794A1
公开(公告)日：2011-03-03
申请号：US12809991
申请日：2008-12-16
申请人： Guillaume Prenat , Wei Guo
发明人： Guillaume Prenat , Wei Guo
IPC分类号： G06F17/50
CPC分类号： G11C11/16 , G06F17/5036
摘要： The junction comprising a stack of at least two magnetic layers, a first layer, for example a soft magnetic layer with controllable magnetization, and a second layer, for example a hard magnetic layer with fixed magnetization, the magnetization of the soft layer being described by a uniform magnetic moment, the dynamic behavior of the junction being modeled by an equivalent electrical circuit comprising at least two coupled parts: a first part representing the stack of the layers, through which a current flows corresponding to the polarized current flowing through said layers whose resistance across its terminals depends on three voltages representing the three dimensions of the magnetic moment along three axes, modeling the tunnel effect; a second part representing the behavior of the magnetic moment, comprising three circuits each representing a dimension of the magnetic moment by the three voltages, each of the three voltages depending on the voltages in the other dimensions and on the voltage across the terminals of the stack, modeling the torque effect exerted by the polarized current on the magnetization of the soft layer.
摘要翻译：所述接合部包括至少两个磁性层的堆叠，第一层，例如具有可控磁化的软磁性层，以及第二层，例如具有固定磁化强度的硬磁性层，软层的磁化由均匀的磁矩，结点的动态行为由包括至少两个耦合部分的等效电路建模：表示层的堆叠的第一部分，电流流过对应于流过所述层的极化电流的电流其端子电阻取决于表示沿三轴的磁矩三维的三个电压，对隧道效应进行建模; 表示磁矩行为的第二部分，包括三个电路，每个电路表示三个电压的磁矩的尺寸，三个电压中的每一个取决于其它尺寸的电压和堆叠端子上的电压对由极化电流施加的扭矩效应对软层的磁化进行建模。

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