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1. 发明授权

US08360300B1 Method and apparatus for ultrasonic welding 有权
标题翻译：超声波焊接方法及装置
公开(公告)号：US08360300B1
公开(公告)日：2013-01-29
申请号：US13249326
申请日：2011-09-30
申请人： Guido Strotmann , Peter Koechling , Christian Steininger
发明人： Guido Strotmann , Peter Koechling , Christian Steininger
IPC分类号： B23K1/06
CPC分类号： B23K20/106 , B29C65/08 , B29C66/00461 , B29C66/1122 , B29C66/472 , B29C66/474 , B29C66/7392 , B29C66/742 , B29C66/7461 , B29C66/81451 , B29C66/8242 , B29C66/8322 , B29C66/9513 , B29C66/9516 , B29L2031/003
摘要： A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.
摘要翻译：公开了一种用于将第一工件超声波焊接到第二工件的方法和装置。两个工件被夹在超声焊丝和砧座之间，使得两个工件彼此机械接触，第一个工件与超声焊丝机械接触，第二个工件放置在砧座上。在第二工件和砧座之间引入流体，使得第二工件至少部分地搁置在流体上。超声波振动由超声波发生器施加到第一工件一段时间。

2. 发明授权

US08586420B2 Power semiconductor arrangement and method for producing a power semiconductor arrangement 失效
标题翻译：功率半导体装置及其制造方法
公开(公告)号：US08586420B2
公开(公告)日：2013-11-19
申请号：US13248464
申请日：2011-09-29
申请人： Thilo Stolze , Guido Strotmann , Karsten Guth
发明人： Thilo Stolze , Guido Strotmann , Karsten Guth
IPC分类号： H01L21/00
CPC分类号： H01L23/3121 , H01L21/4853 , H01L23/3735 , H01L23/49811 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45014 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83205 , H01L2224/8384 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.
摘要翻译：在制造功率半导体装置的方法中，提供具有顶侧的绝缘载体，金属化和具有第一端的接触销。金属化连接到顶侧，并且确定金属化的目标部分。在金属化附着到绝缘载体的顶侧之后，接触销的第一端被压入目标部分，使得第一端插入目标部分。由此，在接触销的第一端和金属化的目标部分之间建立了过盈配合和电连接。

3. 发明申请

US20080211091A1 Power Semiconductor Module and Method for Producing the Same 有权
标题翻译：功率半导体模块及其制造方法
公开(公告)号：US20080211091A1
公开(公告)日：2008-09-04
申请号：US12052863
申请日：2008-03-21
申请人： Alfred Kemper , Guido Strotmann
发明人： Alfred Kemper , Guido Strotmann
IPC分类号： H01L23/48 , B23K20/10
CPC分类号： H05K3/328 , B23K20/10 , B23K2101/40 , H01L21/4853 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/072 , H01L2224/05554 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/4807 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48458 , H01L2224/48464 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/85099 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H05K1/0306 , H05K3/4046 , H05K2201/1028 , H05K2201/10287 , H05K2203/0285 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.
摘要翻译：一种用于生产功率半导体模块的方法，包括通过超声波焊接形成作为超声波焊接接点的接触区域和接触元件之间的接触。超声波焊接操作也用于将接触区域与接触端部接合，并且因此用于接合触头和脚部区域。

4. 发明授权

US08941035B2 Soldering method 有权
标题翻译：焊接方法
公开(公告)号：US08941035B2
公开(公告)日：2015-01-27
申请号：US13077163
申请日：2011-03-31
申请人： Guido Strotmann , Achim Froemelt
发明人： Guido Strotmann , Achim Froemelt
IPC分类号： B23K1/002 , B23K1/00 , B23K1/008
CPC分类号： B23K1/0016 , B23K1/008 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures.
摘要翻译：提供焊接方法。根据该方法，通过加热加热和焊接至少两组部件。每组包括第一焊接伙伴，第二焊接伙伴和焊料。在焊接过程中，每个组的各个温度由射频发射器传输到接收和控制单元。控制单元根据所传送的各个温度来控制组的加热。

5. 发明申请

US20130084679A1 METHOD FOR PRODUCING A POWER SEMICONDUCTOR ARRANGEMENT 有权
标题翻译：生产功率半导体装置的方法
公开(公告)号：US20130084679A1
公开(公告)日：2013-04-04
申请号：US13248311
申请日：2011-09-29
申请人： Thilo Stolze , Guido Strotmann , Karsten Guth
发明人： Thilo Stolze , Guido Strotmann , Karsten Guth
IPC分类号： H01L21/60
CPC分类号： H01L21/4853 , H01L23/3121 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/072 , H01L2224/29311 , H01L2224/29339 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/8381 , H01L2224/8382 , H01L2224/8384 , H01L2224/92247 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.
摘要翻译：在制造功率半导体装置的方法中，提供了具有设置在顶侧的顶侧和顶部金属化层的介电绝缘载体。还提供有半导体芯片和至少一个导电接触销，每个销具有第一端和相对的第二端。将半导体芯片烧结或扩散焊接到顶部金属化层。在第一端部和顶部金属化层之间形成导电连接，其中接触销的导电连接材料与顶部金属化层的材料直接物理接触。

6. 发明授权

US08563364B2 Method for producing a power semiconductor arrangement 有权
标题翻译：一种功率半导体装置的制造方法
公开(公告)号：US08563364B2
公开(公告)日：2013-10-22
申请号：US13248311
申请日：2011-09-29
申请人： Thilo Stolze , Guido Strotmann , Karsten Guth
发明人： Thilo Stolze , Guido Strotmann , Karsten Guth
IPC分类号： H01L21/60
CPC分类号： H01L21/4853 , H01L23/3121 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/072 , H01L2224/29311 , H01L2224/29339 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/8381 , H01L2224/8382 , H01L2224/8384 , H01L2224/92247 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a method for producing a power semiconductor arrangement, a dielectric insulation carrier with a top side and a top metallization layer arranged on the top side are provided. Also provided are a semiconductor chip and at least one electrically conductive contact pin, each pin having a first end and an opposite second end. The semiconductor chip is sintered or diffussion soldered to the top metallization layer. Between the first end and the top metallization layer an electrically conductive connection is formed, in which electrically conductive connection material of the contact pin is in direct physical contact with the material of the top metallization layer.
摘要翻译：在制造功率半导体装置的方法中，提供了具有设置在顶侧的顶侧和顶部金属化层的介电绝缘载体。还提供有半导体芯片和至少一个导电接触销，每个销具有第一端和相对的第二端。将半导体芯片烧结或扩散焊接到顶部金属化层。在第一端部和顶部金属化层之间形成导电连接，其中接触销的导电连接材料与顶部金属化层的材料直接物理接触。

7. 发明申请

US20130082387A1 POWER SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR ARRANGEMENT 失效
标题翻译：功率半导体装置和生产功率半导体装置的方法
公开(公告)号：US20130082387A1
公开(公告)日：2013-04-04
申请号：US13248464
申请日：2011-09-29
申请人： Thilo Stolze , Guido Strotmann , Karsten Guth
发明人： Thilo Stolze , Guido Strotmann , Karsten Guth
IPC分类号： H01L23/49 , H01L21/768
CPC分类号： H01L23/3121 , H01L21/4853 , H01L23/3735 , H01L23/49811 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45014 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83205 , H01L2224/8384 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： In a method for producing a power semiconductor arrangement, an insulation carrier with a top side, a metallization, and a contact pin with a first end are provided. The metallization is attached to the top side and a target section of the metallization is determined. After the metallization is attached to the top side of the insulation carrier, the first end of the contact pin is pressed into the target section such that the first end is inserted in the target section. Thereby, an interference fit and an electrical connection are established between the first end of the contact pin and the target section of the metallization.
摘要翻译：在制造功率半导体装置的方法中，提供具有顶侧的绝缘载体，金属化和具有第一端的接触销。金属化连接到顶侧，并且确定金属化的目标部分。在金属化附着到绝缘载体的顶侧之后，接触销的第一端被压入目标部分，使得第一端插入目标部分。由此，在接触销的第一端和金属化的目标部分之间建立了过盈配合和电连接。

8. 发明授权

US08317078B1 Method and apparatus for ultrasonic welding or bonding 有权
标题翻译：用于超声波焊接或粘合的方法和装置
公开(公告)号：US08317078B1
公开(公告)日：2012-11-27
申请号：US13327137
申请日：2011-12-15
申请人： Guido Strotmann , Achim Cordes
发明人： Guido Strotmann , Achim Cordes
IPC分类号： B23K1/06
CPC分类号： B23K20/10 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2924/20751 , H01L2924/00014
摘要： A method and an apparatus for ultrasonic welding of a first workpiece to a second workpiece is disclosed. The two workpieces are clamped between a sonotrode and an anvil so that the two workpieces are in mechanical contact with each other, the first workpiece is in mechanical contact with the sonotrode and the second workpiece rests on the anvil. Fluid is introduced between the second workpiece and the anvil so that the second workpiece at least partly rests on the fluid. The fluid is frozen so that the fluid forms a solid body. Ultrasonic vibrations are applied to the first workpiece by the sonotrode for a period of time.
摘要翻译：公开了一种用于将第一工件超声波焊接到第二工件的方法和装置。两个工件被夹在超声焊丝和砧座之间，使得两个工件彼此机械接触，第一个工件与超声焊丝机械接触，第二个工件搁置在砧座上。在第二工件和砧座之间引入流体，使得第二工件至少部分地搁置在流体上。流体被冷冻，使得流体形成固体。超声波振动由超声波发生器施加到第一工件一段时间。

9. 发明申请

US20090127317A1 DEVICE AND METHOD FOR PRODUCING A BONDING CONNECTION 审中-公开
标题翻译：用于生产连接连接的装置和方法
公开(公告)号：US20090127317A1
公开(公告)日：2009-05-21
申请号：US11940686
申请日：2007-11-15
申请人： Dirk Siepe , Guido Strotmann
发明人： Dirk Siepe , Guido Strotmann
IPC分类号： B23K20/10
CPC分类号： B23K20/004 , B23K20/005 , B23K20/10 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/32225 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/45155 , H01L2224/48091 , H01L2224/48455 , H01L2224/48472 , H01L2224/73265 , H01L2224/78313 , H01L2224/78314 , H01L2224/7855 , H01L2224/85181 , H01L2224/85205 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/2076 , H01L2924/01022 , H01L2924/00014 , H01L2924/00 , H01L2924/01204 , H01L2924/00015 , H01L2924/01202 , H01L2924/013 , H01L2924/01026 , H01L2924/01083 , H01L2924/01048 , H01L2924/01025 , H01L2924/01034 , H01L2924/00013 , H01L2924/206
摘要： A bonding device and method for producing a bonding connection is disclosed. One embodiment provides a bonding stamp and an ultrasonic generator coupled thereto. The ultrasonic frequency and an effective length, which is given by the distance between the lower end of the bonding stamp and the coupling location of the ultrasonic generator at the bonding stamp in the vertical direction, are coordinated with one another in such a way that the following holds true: 0.9 · n · c 2 · l ≤ f ≤ 1.1 · n · c 2 · l where c is the speed of the ultrasound in the bonding stamp at the frequency f, and n=1 or 2 or 3 or 4.
摘要翻译：公开了一种用于制造接合连接的接合装置和方法。一个实施例提供了结合印章和耦合到其上的超声发生器。超声波频率和有效长度由键合印模的下端之间的距离和超声波发生器在键合印模的垂直方向上的耦合位置之间的距离彼此协调，使得以下内容成立： $0.9><=f<=。c2其中c是超声波的速度在频率f处键合印记，n = 1或2或3或4。$

10. 发明申请

US20120248094A1 Soldering Method 有权
标题翻译：焊接方法
公开(公告)号：US20120248094A1
公开(公告)日：2012-10-04
申请号：US13077163
申请日：2011-03-31
申请人： Guido Strotmann , Achim Froemelt
发明人： Guido Strotmann , Achim Froemelt
IPC分类号： B23K1/002
CPC分类号： B23K1/0016 , B23K1/008 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/73265 , H01L2224/92247 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： A soldering method is provided. According to the method at least two sets of components are heated and soldered by heating. Each set includes a first soldering partner, a second soldering partner, and a solder. During the soldering process, the individual temperatures of each one of the sets are transmitted by a radio frequency transmitter to a receiving and control unit. The control unit controls the heating of the sets depending on the transmitted individual temperatures.
摘要翻译：提供焊接方法。根据该方法，通过加热加热和焊接至少两组部件。每组包括第一焊接伙伴，第二焊接伙伴和焊料。在焊接过程中，每个组的各个温度由射频发射器传输到接收和控制单元。控制单元根据所传送的各个温度来控制组的加热。

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