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1. 发明申请

US20120081639A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20120081639A1
公开(公告)日：2012-04-05
申请号：US13245356
申请日：2011-09-26
申请人： Guang-Shiung Chao , Feng-Weei Kuo , Li-Chao Chien , Ra-Bin Li , Cheng-Chia Wu , Chao-Hui Wu
发明人： Guang-Shiung Chao , Feng-Weei Kuo , Li-Chao Chien , Ra-Bin Li , Cheng-Chia Wu , Chao-Hui Wu
IPC分类号： G02F1/1335
CPC分类号： G02F1/13363 , G02F1/1395
摘要： A liquid crystal display device includes a first polarization plate, a first birefringent film atop the first polarization plate, an optically compensated bend mode (OCB-mode) cell atop the first birefringent film, a refractive film atop the OCB-mode cell, a second birefringent film atop the refractive film, and a second polarization plate atop the second birefringent film. With this structure, any phase retardation of polarized light occurred during the propagation of the polarized light from the first polarization plate to the second polarization plate is compensated by the first birefringent film, the refractive film, and the second birefringent film and a substantially cross-shaped radiation pattern of full viewing angle is obtained in an actual measurement at the light outgoing surface of the liquid crystal display device, proving the liquid crystal display device has effectively improved the problem of restricted viewing angle and provides good optical performance.
摘要翻译：液晶显示装置包括：第一偏振板，位于第一偏振板顶部的第一双折射膜，第一双折射膜顶部的光学补偿弯曲模式（OCB模式）单元，OCB模式单元顶部的折射膜，第二偏振片在折射膜顶上的双折射膜，以及位于第二双折射膜顶部的第二偏振片。利用该结构，在从第一偏振片到第二偏振片的偏振光的传播期间发生的偏振光的任何相位延迟都由第一双折射膜，折射膜和第二双折射膜补偿，在液晶显示装置的光出射面的实际测量中获得全视角的形状的辐射图案，证明液晶显示装置有效地改善了视角受限的问题并提供良好的光学性能。

2. 发明授权

US07999899B1 Fringe field switching liquid crystal display apparatus 有权
标题翻译：边缘现场开关液晶显示装置
公开(公告)号：US07999899B1
公开(公告)日：2011-08-16
申请号：US13013440
申请日：2011-01-25
申请人： Chia Hua Yu , I-Fang Wang , Feng-Weei Kuo , Ko-Ruay Jen , Guang-Shiung Chao
发明人： Chia Hua Yu , I-Fang Wang , Feng-Weei Kuo , Ko-Ruay Jen , Guang-Shiung Chao
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2001/134372
摘要： A fringe field switching liquid crystal display apparatus is provided. This apparatus includes a first electrode disposed in a stacked relationship with a second electrode. The first electrode includes a first side edge, a second side edge, and plural spaces that define plural strips between the first and the second side edges, wherein the plural strips and the plural spacings form a first area. The second electrode is disposed on one of places above and below the first electrode, and has at least a penetrating vacancy or other capacitance-reduction device, which has a projection onto the first electrode located outside the first area.
摘要翻译：提供了一种边缘场切换液晶显示装置。该装置包括与第二电极堆叠关系地设置的第一电极。第一电极包括第一侧边缘，第二侧边缘和在第一和第二侧边缘之间限定多个条带的多个空间，其中多个条带和多个间隔形成第一区域。第二电极设置在第一电极上方和下方的一个位置上，并且至少具有穿透空位或其他电容减小装置，其在位于第一区域外部的第一电极上具有突起。

3. 发明授权

US08796688B2 Pixel structure, method of manufacturing pixel structure, and active device matrix substrate 有权
标题翻译：像素结构，像素结构制造方法和有源器件矩阵衬底
公开(公告)号：US08796688B2
公开(公告)日：2014-08-05
申请号：US13592347
申请日：2012-08-23
申请人： Feng-Weei Kuo , Ko-Ruey Jen , Chia-Hua Yu , I-Fang Wang
发明人： Feng-Weei Kuo , Ko-Ruey Jen , Chia-Hua Yu , I-Fang Wang
IPC分类号： H01L29/04
CPC分类号： H01L27/1255 , H01L28/86
摘要： A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure. The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.
摘要翻译：提供像素结构，制造像素结构的方法和有源器件矩阵基板。像素结构包括具有公共线和栅极的第一图案化金属层; 第一绝缘层; 半导体图案; 具有电连接到半导体图案的源极和漏极的第二图案化金属层; 第二绝缘层，具有暴露漏极的接触开口; 以及具有公共电极的电极层和通过接触开口连接到漏极的像素电极。公共线，第一绝缘层和像素电极构成第一存储电容器。公共线，漏极和公共电极构成夹层结构。公共线，第一绝缘层和漏极构成第二存储电容器。漏极，第二绝缘层和公共电极构成第三存储电容器。

4. 发明申请

US20130328052A1 PIXEL STRUCTURE, METHOD OF MANUFACTURING PIXEL STRUCTURE, AND ACTIVE DEVICE MATRIX SUBSTRATE 有权
标题翻译：像素结构，制造像素结构的方法和主动器件矩阵衬底
公开(公告)号：US20130328052A1
公开(公告)日：2013-12-12
申请号：US13592347
申请日：2012-08-23
申请人： Feng-Weei Kuo , Ko-Ruey Jen , Chia-Hua Yu , I-Fang Wang
发明人： Feng-Weei Kuo , Ko-Ruey Jen , Chia-Hua Yu , I-Fang Wang
IPC分类号： H01L33/36 , H01L29/786
CPC分类号： H01L27/1255 , H01L28/86
摘要： A pixel structure, a method of manufacturing the pixel structure, and an active device matrix substrate are provided. The pixel structure includes a first patterned metal layer having a common line and a gate; a first insulation layer; a semiconductor pattern; a second patterned metal layer having a source and a drain both electrically connected to the semiconductor pattern; a second insulation layer having a contact opening exposing the drain; and an electrode layer having a common electrode, and a pixel electrode connected to the drain through the contact opening. The common line, the first insulation layer, and the pixel electrode constitute a first storage capacitor. The common line, the drain, and the common electrode constitute a sandwich structure.The common line, the first insulation layer, and the drain constitute a second storage capacitor. The drain, the second insulation layer, and the common electrode constitute a third storage capacitor.
摘要翻译：提供像素结构，制造像素结构的方法和有源器件矩阵基板。像素结构包括具有公共线和栅极的第一图案化金属层; 第一绝缘层; 半导体图案; 具有电连接到半导体图案的源极和漏极的第二图案化金属层; 第二绝缘层，具有暴露漏极的接触开口; 以及具有公共电极的电极层和通过接触开口连接到漏极的像素电极。公共线，第一绝缘层和像素电极构成第一存储电容器。公共线，漏极和公共电极构成夹层结构。公共线，第一绝缘层和漏极构成第二存储电容器。漏极，第二绝缘层和公共电极构成第三存储电容器。

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