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1. 发明授权

US09184043B2 Edge electrodes with dielectric covers 有权
标题翻译：带电介质盖的边缘电极
公开(公告)号：US09184043B2
公开(公告)日：2015-11-10
申请号：US11758584
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

2. 发明申请

US20090166326A1 EDGE ELECTRODES WITH DIELECTRIC COVERS 有权
标题翻译：带电介质盖的边缘电极
公开(公告)号：US20090166326A1
公开(公告)日：2009-07-02
申请号：US11758584
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi , Yunsang Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括围绕衬底支撑件的底部边缘电极。底部边缘电极和基底支撑件通过底部介电环彼此电隔离。面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。顶边电极电接地。面向衬底的顶边电极的表面被顶部薄介电层覆盖。顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

3. 发明授权

US08252140B2 Plasma chamber for wafer bevel edge processing 有权
标题翻译：等离子室用于晶圆斜面加工
公开(公告)号：US08252140B2
公开(公告)日：2012-08-28
申请号：US13084849
申请日：2011-04-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在一个示例中，提供了用于晶片斜面边缘清洁的室。该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。还包括围绕绝缘板的顶边电极。绝缘板与底部电极相对。顶边电极电接地并具有向下的L形状。还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。下边缘电极被设置成环绕底部电极。底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

4. 发明授权

US08574397B2 Bevel edge plasma chamber with top and bottom edge electrodes 有权
标题翻译：斜边等离子体室具有顶部和底部的边缘电极
公开(公告)号：US08574397B2
公开(公告)日：2013-11-05
申请号：US13547700
申请日：2012-07-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.
摘要翻译：提供了一种用于清洁基板的斜边缘的等离子体处理室。该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。顶边电极通过顶部介质环电接地并与绝缘体板分离。该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

5. 发明授权

US07938931B2 Edge electrodes with variable power 有权
标题翻译：具有可变功率的边缘电极
公开(公告)号：US07938931B2
公开(公告)日：2011-05-10
申请号：US11758576
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。顶边电极电接地。等离子体处理室还包括围绕底部电极的底部边缘电极。底边电极与顶边缘电极相对。上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

6. 发明申请

US20090114244A1 EDGE ELECTRODES WITH VARIABLE POWER 有权
标题翻译：具有可变功率的边缘电极
公开(公告)号：US20090114244A1
公开(公告)日：2009-05-07
申请号：US11758576
申请日：2007-06-05
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： C25F1/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。顶边电极电接地。等离子体处理室还包括围绕底部电极的底部边缘电极。底边电极与顶边缘电极相对。上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

7. 发明申请

US20120273134A1 Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes 有权
标题翻译：具有顶部和底部电极的斜边等离子体室
公开(公告)号：US20120273134A1
公开(公告)日：2012-11-01
申请号：US13547700
申请日：2012-07-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： B08B13/00
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.
摘要翻译：提供了一种用于清洁基板的斜边缘的等离子体处理室。该室包括围绕绝缘板的顶边电极，绝缘体板与底部电极相对。顶边电极通过顶部介质环电接地并与绝缘体板分离。该腔室还包括底部电极，其电接地并且围绕底部电极并且通过底部介电环与底部电极分离。底边电极被定向为与顶边缘电极相对，并且底边电极具有面向上的L形。衬底边缘的斜边等离子体处理被配置为在具有顶部和底部边缘电极的腔室中进行处理。

8. 发明申请

US20110186227A1 PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING 有权
标题翻译：用于波浪边缘加工的等离子体室
公开(公告)号：US20110186227A1
公开(公告)日：2011-08-04
申请号：US13084849
申请日：2011-04-12
申请人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
发明人： Gregory S. Sexton , Andrew D. Bailey, III , Andras Kuthi
IPC分类号： B08B13/00 , C23F1/08
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译：这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。在一个示例中，提供了用于晶片斜面边缘清洁的室。该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。还包括围绕绝缘板的顶边电极。绝缘板与底部电极相对。顶边电极电接地并具有向下的L形状。还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。下边缘电极被设置成环绕底部电极。底部边缘电极被定向成与顶部边缘电极的向下的L形相对。

9. 发明授权

US07858898B2 Bevel etcher with gap control 有权
标题翻译：斜角蚀刻机具有间隙控制
公开(公告)号：US07858898B2
公开(公告)日：2010-12-28
申请号：US11698191
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
IPC分类号： B23K10/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

10. 发明授权

US07575638B2 Apparatus for defining regions of process exclusion and process performance in a process chamber 有权
标题翻译：用于限定处理室中的工艺排除区域和工艺性能的装置
公开(公告)号：US07575638B2
公开(公告)日：2009-08-18
申请号：US11701854
申请日：2007-02-02
申请人： Andrew D. Bailey, III , Jack Chen , Yunsang Kim , Gregory S. Sexton
发明人： Andrew D. Bailey, III , Jack Chen , Yunsang Kim , Gregory S. Sexton
IPC分类号： B05B5/025 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译：位置关系建立在一个过程室中。上电极配置有第一表面以支撑晶片，并且电极具有第二表面。线性驱动器安装在基座上，连接在驱动器和上电极之间。连接调整定义了表面之间的期望取向。线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。

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