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    • 4. 发明授权
    • Zero-order overlay targets
    • 零级覆盖目标
    • US07772710B2
    • 2010-08-10
    • US11931140
    • 2007-10-31
    • Richard SilverPete LipscombBryan BarnesRavikirran Attota
    • Richard SilverPete LipscombBryan BarnesRavikirran Attota
    • H01L23/544
    • H01L23/544H01L2223/54453H01L2924/0002H01L2924/00
    • A zero-order overlay target comprises a first zero-order line array fabricated on a first layer of a semiconductor structure, the first zero-order line array having a first pitch, and a second zero-order line array fabricated on a second layer of the semiconductor structure, the second zero-order line array having a second pitch. The second pitch may be different from the first pitch, and a portion of the second zero-order line array may be positioned to become optically coupled to a portion of the first zero-order line array when subject to an overlay measurement. Further, the second pitch may be variable. For example, the variable pitch may comprise a first set of features having a pitch approximately equal to the first pitch, a second set of features having a pitch different from the first pitch, and a third set of features having a pitch approximately equal to the first pitch.
    • 零级覆盖目标包括制造在半导体结构的第一层上的第一零级线阵列,具有第一节距的第一零级线阵列和在第二层上制造的第二零阶线阵列 半导体结构,第二零级线阵列具有第二间距。 第二间距可以不同于第一间距,并且当进行覆盖测量时,第二零级线阵列的一部分可以被定位成光耦合到第一零级线阵列的一部分。 此外,第二间距可以是可变的。 例如,可变节距可以包括具有近似等于第一节距的节距的第一组特征,具有不同于第一节距的节距的第二组特征,以及具有近似等于第一节距的节距的第三组特征 第一场
    • 6. 发明申请
    • ZERO-ORDER OVERLAY TARGETS
    • US20080142998A1
    • 2008-06-19
    • US11931140
    • 2007-10-31
    • Richard SilverPete LipscombBryan BarnesRavikirran Attota
    • Richard SilverPete LipscombBryan BarnesRavikirran Attota
    • H01L23/544H01L21/76
    • H01L23/544H01L2223/54453H01L2924/0002H01L2924/00
    • A zero-order overlay target comprises a first zero-order line array fabricated on a first layer of a semiconductor structure, the first zero-order line array having a first pitch, and a second zero-order line array fabricated on a second layer of the semiconductor structure, the second zero-order line array having a second pitch. The second pitch may be different from the first pitch, and a portion of the second zero-order line array may be positioned to become optically coupled to a portion of the first zero-order line array when subject to an overlay measurement. Further, the second pitch may be variable. For example, the variable pitch may comprise a first set of features having a pitch approximately equal to the first pitch, a second set of features having a pitch different from the first pitch, and a third set of features having a pitch approximately equal to the first pitch.
    • 零级覆盖目标包括制造在半导体结构的第一层上的第一零级线阵列,具有第一节距的第一零级线阵列和在第二层上制造的第二零阶线阵列 半导体结构,第二零级线阵列具有第二间距。 第二间距可以不同于第一间距,并且当进行覆盖测量时,第二零级线阵列的一部分可以被定位成光耦合到第一零级线阵列的一部分。 此外,第二间距可以是可变的。 例如,可变节距可以包括具有近似等于第一节距的节距的第一组特征,具有不同于第一节距的节距的第二组特征,以及第三组特征,具有近似等于 第一场