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    • 2. 发明申请
    • MASK SCHEMES FOR PATTERNING MAGNETIC TUNNEL JUNCTIONS
    • 用于绘制磁性隧道结的掩蔽方案
    • US20050277207A1
    • 2005-12-15
    • US10868328
    • 2004-06-15
    • Gregory CostriniFrank FindeisGill LeeChanro Park
    • Gregory CostriniFrank FindeisGill LeeChanro Park
    • G11C11/15H01L21/8246H01L27/22H01L43/12
    • H01L43/12B82Y10/00H01L27/228
    • Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.
    • 磁记录装置的磁隧道结(MTJ)的图案化方法,可避免在刻蚀过程中将磁存储单元短路到上层的导线。 一种方法包括使用具有两个材料层的硬掩模来图案化MTJ的下部磁性材料层。 硬掩模的第一种材料是薄的并且包括耐蚀刻材料。 沉积在第一材料上的硬掩模的第二材料比第一材料更厚并且耐蚀刻性更差。 在下磁性材料层的蚀刻过程期间,至少部分第二材料被牺牲地去除。 可以使用保形或非保形材料作为硬掩模的第二材料。 用于图形MTJ的较低磁性材料的硬掩模可以包括单层非保形材料。
    • 5. 发明授权
    • Mask schemes for patterning magnetic tunnel junctions
    • 用于图案化磁隧道结的掩模方案
    • US07001783B2
    • 2006-02-21
    • US10868328
    • 2004-06-15
    • Gregory CostriniFrank FindeisGill Yong LeeChanro Park
    • Gregory CostriniFrank FindeisGill Yong LeeChanro Park
    • H01L21/00
    • H01L43/12B82Y10/00H01L27/228
    • Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.
    • 磁记录装置的磁隧道结(MTJ)的图案化方法,可避免在刻蚀过程中将磁存储单元短路到上层的导线。 一种方法包括使用具有两个材料层的硬掩模来图案化MTJ的下部磁性材料层。 硬掩模的第一种材料是薄的并且包括耐蚀刻材料。 沉积在第一材料上的硬掩模的第二材料比第一材料更厚并且耐蚀刻性更差。 在下磁性材料层的蚀刻过程期间,至少部分第二材料被牺牲地去除。 可以使用保形或非保形材料作为硬掩模的第二材料。 用于图形MTJ的较低磁性材料的硬掩模可以包括单层非保形材料。