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1. 发明申请

US20050041711A1 Intersubband semiconductor lasers with enhanced subband depopulation rate 失效
标题翻译：带子半导体激光器具有增强的子带压缩率
公开(公告)号：US20050041711A1
公开(公告)日：2005-02-24
申请号：US10956590
申请日：2004-09-29
申请人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
发明人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
IPC分类号： H01S5/00 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S2301/173
摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用。 ISL通常遇到几个问题，其中包括由于较大的动量传递而引起的缓慢的内插弛豫时间，以及初始和最终电子状态在井间跃迁中的小波函数重叠。总的来说，现有技术的ISL受到子带间反弹的影响。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反演。该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

2. 发明授权

US06819696B1 Intersubband semiconductor lasers with enhanced subband depopulation rate 失效
标题翻译：带子半导体激光器具有增强的子带压缩率
公开(公告)号：US06819696B1
公开(公告)日：2004-11-16
申请号：US09957531
申请日：2001-09-21
申请人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
发明人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
IPC分类号： H01S500
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S2301/173
摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &mgr;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用.ISL通常遇到几个问题，包括由于大的动量传递而引起的慢内插子带松弛时间，以及初始和最终电子的小波函数重叠状态在井间转变。总的来说，现有技术的ISL具有弱的子带内群体反转。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反转。该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

3. 发明授权

US07310361B2 Intersubband semiconductor lasers with enhanced subband depopulation rate 失效
标题翻译：带子半导体激光器具有增强的子带压缩率
公开(公告)号：US07310361B2
公开(公告)日：2007-12-18
申请号：US10956590
申请日：2004-09-29
申请人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
发明人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S2301/173
摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions.ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion.The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用。 ISL通常遇到几个问题，其中包括由于较大的动量传递而引起的缓慢的内插弛豫时间，以及初始和最终电子状态在井间跃迁中的小波函数重叠。总的来说，现有技术的ISL受到子带间反弹的影响。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反演。该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

4. 发明申请

US20060056466A1 Semiconductor light source with electrically tunable emission wavelength 有权
标题翻译：具有电可调谐发射波长的半导体光源
公开(公告)号：US20060056466A1
公开(公告)日：2006-03-16
申请号：US11206505
申请日：2005-08-18
申请人： Gregory Belenky , John Bruno , Mikhail Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard Tober
发明人： Gregory Belenky , John Bruno , Mikhail Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard Tober
IPC分类号： H01S3/10
CPC分类号： H01S5/0622 , B82Y20/00 , H01S5/322 , H01S5/3401 , H01S5/3402 , H01S5/3422
摘要： A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
摘要翻译：公开了一种半导体光源，其包括基底，下部和上部包层，具有嵌入的有源区的波导区和用于提供波长调谐所需的电压的电触点。有源区包括夹在电荷累积层之间的单个或多个异质结期。每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。可以通过电注入或光泵浦在有源区域中产生非平衡载流子。辐射复合发生在电子和空穴之间，累积在每个有效区域周期的高亲和力层和低亲和层中形成的三角势阱的基态中。可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

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