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1. 发明授权

US6013556A Method of integrated circuit fabrication 失效
标题翻译：集成电路制造方法
公开(公告)号：US6013556A
公开(公告)日：2000-01-11
申请号：US924728
申请日：1997-09-05
申请人： Gregg Sumio Higashi , Mon-Fen Hong , Lionel Cooper Kimerling , Yi Ma
发明人： Gregg Sumio Higashi , Mon-Fen Hong , Lionel Cooper Kimerling , Yi Ma
IPC分类号： H01L21/322 , H01L21/76
CPC分类号： H01L21/3225
摘要： Crochralski wafers are desirably thermally processed at an elevated temperature prior to integrated circuit fabrication. The thermal processing reduces the number of oxygen nucleation centers and prevents subsequent oxygen precipitation from interfering with iron contamination measurements.
摘要翻译： Crockralski晶片希望在集成电路制造之前在升高的温度下热处理。热处理减少氧成核中心的数量，并防止后续的氧沉淀干扰铁污染测量。

2. 发明授权

US6153901A Integrated circuit capacitor including anchored plug 有权
标题翻译：集成电路电容器，包括固定插头
公开(公告)号：US6153901A
公开(公告)日：2000-11-28
申请号：US364367
申请日：1999-07-30
申请人： Gregg Sumio Higashi
发明人： Gregg Sumio Higashi
IPC分类号： H01L27/04 , C23C14/08 , C23C14/58 , H01L21/02 , H01L21/28 , H01L21/768 , H01L21/822 , H01L23/522 , H01L23/532 , H01L27/108 , H01L29/51 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/60 , C23C14/083 , C23C14/5806 , C23C14/5873 , H01L21/28167 , H01L21/76802 , H01L21/76805 , H01L21/76888 , H01L23/5223 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L29/51 , H01L2924/0002
摘要： An integrated circuit capacitor includes a substrate with an interconnection line adjacent the substrate, and a first dielectric layer on the interconnection line. The first dielectric layer includes a trench therein. The metal plug includes a body portion extending upwardly into the trench, and an anchor portion is connected to the body portion and extends into the interconnection line. The anchor portion has an enlarged width portion to anchor the metal plug adjacent lower portions of the first dielectric layer. Because the metal plug is anchored, a depth of the trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.
摘要翻译：集成电路电容器包括具有与衬底相邻的互连线的衬底和互连线上的第一介电层。第一电介质层包括沟槽。金属插塞包括向上延伸到沟槽中的主体部分，并且锚固部分连接到主体部分并延伸到互连线中。锚定部分具有扩大的宽度部分，以在第一介电层的下部相邻地锚定金属塞。因为金属插头被锚定，所以沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分开。

3. 发明授权

US06169010A Method for making integrated circuit capacitor including anchored plug 有权
标题翻译：制造集成电路电容器包括锚定插头的方法
公开(公告)号：US06169010A
公开(公告)日：2001-01-02
申请号：US09364208
申请日：1999-07-30
申请人： Gregg Sumio Higashi
发明人： Gregg Sumio Higashi
IPC分类号： H01L2120
CPC分类号： H01L28/60 , H01L21/76805 , H01L23/5223 , H01L23/5226 , H01L27/10817 , H01L27/10852 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method for making an integrated circuit capacitor includes forming an interconnection line adjacent a substrate, forming a first dielectric layer on the interconnection line, forming a first opening in the first dielectric layer, and forming a second opening in the interconnection line aligned with the first opening and having an enlarged width portion greater than a width of the first opening. The method further includes filling the first and second openings with a conductive metal to define a metal plug having a body portion and an anchor portion adjacent lower portions of the first dielectric layer. The method also includes forming a trench in the first dielectric layer adjacent the body portion of the metal plug, forming a first electrode lining the trench and contacting the metal plug, forming a second dielectric layer on the first electrode, and forming a second electrode on the second dielectric layer. Because the metal plug is anchored, a depth of the trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.
摘要翻译：一种制造集成电路电容器的方法包括在基片附近形成互连线，在互连线上形成第一电介质层，在第一电介质层中形成第一开口，以及在与第一电介质层对准的互连线中形成第二开口具有比第一开口的宽度大的宽度部分。该方法还包括用导电金属填充第一和第二开口以限定具有主体部分和与第一介电层的下部相邻的锚定部分的金属插塞。该方法还包括在第一电介质层中形成与金属插塞的主体部分相邻的沟槽，形成衬在沟槽上并与金属插塞接触的第一电极，在第一电极上形成第二电介质层，并形成第二电极第二电介质层。因为金属插头被锚定，所以沟槽的深度可以更大，而不会使金属插头松动并与下面的互连线分开。

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