专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07205235B2 Method for reducing corrosion of metal surfaces during semiconductor processing 有权
标题翻译：减少半导体加工过程中金属表面腐蚀的方法
公开(公告)号：US07205235B2
公开(公告)日：2007-04-17
申请号：US10736395
申请日：2003-12-15
申请人： Grant W. McEwan , Scott C. Bolton , Barry T. Haygood
发明人： Grant W. McEwan , Scott C. Bolton , Barry T. Haygood
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , H01L21/02071 , H01L21/76802 , H01L21/76877
摘要： A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to ambient conditions that may include humidity. The effect of the humidity is potentially to cause corrosion of the exposed metal causing a yield loss. In order to withstand the various time periods that may occur between processing steps, an inhibitor is applied to the exposed surface causing the formation of a very thin protective layer on the exposed metal, which greatly inhibits corrosion. This thin protective layer does not cause any problems with the subsequent step because the typical following steps all, by their very nature, remove the protective layer. Thus, the time period between the processing step that exposes the metal and the next step is no longer critical due to the protective layer.
摘要翻译：半导体工艺在预期包括层的沉积的附加处理步骤的情况下暴露金属。在两个处理步骤之间，暴露的金属暴露于可能包括湿度的环境条件下。湿度的影响可能导致暴露金属的腐蚀，导致产量损失。为了承受处理步骤之间可能发生的各种时间段，将抑制剂施加到暴露的表面，导致在暴露的金属上形成非常薄的保护层，这极大地抑制了腐蚀。这个薄的保护层不会对随后的步骤造成任何问题，因为典型的后续步骤全部由它们的本质来去除保护层。因此，由于保护层，暴露金属的处理步骤和下一步骤之间的时间段不再是关键的。

2. 发明申请

US20190003999A1 Grid Coatings for Capture of Proteins and Other Compounds 审中-公开
公开(公告)号：US20190003999A1
公开(公告)日：2019-01-03
申请号：US16063029
申请日：2016-12-16
申请人： David H. Thompson , Christopher Benjamin , Kyle J. Wright , Scott C. Bolton , Seok-Hee Hyun , Purdue Research Foundation
发明人： David H. Thompson , Christopher Benjamin , Kyle J. Wright , Scott C. Bolton , Seok-Hee Hyun
IPC分类号： G01N27/12 , C01B32/192 , G01N27/414
摘要： Grids comprising a coating modified with one or more capture agents and a deactivating agent are disclosed. Methods of using such grids in connection with suitable microscopy techniques, such as for determining the structure of target compounds including proteins, are also disclosed.

3. 发明授权

US06476623B1 Percent backsputtering as a control parameter for metallization 失效
标题翻译：反向溅射的百分比作为金属化的控制参数
公开(公告)号：US06476623B1
公开(公告)日：2002-11-05
申请号：US09666759
申请日：2000-09-21
申请人： Scott C. Bolton , Dean J. Denning , Sam S. Garcia
发明人： Scott C. Bolton , Dean J. Denning , Sam S. Garcia
IPC分类号： G01R2708
CPC分类号： C23C14/345 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76838
摘要： A method for depositing a first metal layer such as tantalum or copper on a patterned semiconductor wafer using a metal sputtering tool that typically includes an electrically biased wafer chuck is disclosed. Initially, a first test wafer is placed on the wafer chuck and a first test layer of materials is deposited on the first test wafer. During the deposition of the first test layer on the first test wafer, the wafer receives the electrical bias at a first level. A second test wafer is then placed on the wafer chuck and a second test layer of material is deposited with the second wafer receiving a second level of electrical bias. The difference in thickness between the first layer and the second layer is then determined. If the difference in thickness is within a predetermined range, the metal sputtering chamber is qualified to deposit a production layer on a production semiconductor wafer.
摘要翻译：公开了一种使用通常包括电偏置晶片卡盘的金属溅射工具在图案化半导体晶片上沉积诸如钽或铜的第一金属层的方法。首先，将第一测试晶片放置在晶片卡盘上，并将第一测试层材料沉积在第一测试晶片上。在将第一测试层沉积在第一测试晶片上时，晶片在第一级接收电偏压。然后将第二测试晶片放置在晶片卡盘上，并且第二测试层材料沉积，第二晶片接收第二级电偏压。然后确定第一层和第二层之间的厚度差。如果厚度差在预定范围内，则金属溅射室有资格在生产半导体晶片上沉积生产层。

4. 发明授权

US5756380A Method for making a moisture resistant semiconductor device having an organic substrate 失效
标题翻译：制造具有有机基板的防潮半导体装置的方法
公开(公告)号：US5756380A
公开(公告)日：1998-05-26
申请号：US556782
申请日：1995-11-02
申请人： Howard M. Berg , Sankaranarayanan Ganesan , Gary L. Lewis , George W. Hawkins , James W. Sloan , Scott C. Bolton
发明人： Howard M. Berg , Sankaranarayanan Ganesan , Gary L. Lewis , George W. Hawkins , James W. Sloan , Scott C. Bolton
IPC分类号： H01L23/31 , H01L21/60
CPC分类号： H01L24/32 , H01L23/3128 , H01L2224/32057 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/83385 , H01L2224/85444 , H01L24/48 , H01L24/73 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12044 , H01L2924/15173 , H01L2924/15183 , H01L2924/15311 , H01L2924/181
摘要： A method for making moisture resistant semiconductor devices having organic substrates targets each of the potentially critical interfaces within a semiconductor device having the potential for delamination and cracking. An organic substrate (110) is designed to include a solid pad (116) having a chemically created oxide layer (118) formed thereon. A silicone-based die attach material (108) is dispensed and gelled very soon after dispensing to prevent excessive bleed. A semiconductor die (102) is mounted to the substrate after undergoing a cleaning operation to remove contaminants from the backside of the die. Prior to molding compound encapsulation and subsequent to die attach material cure, the substrate is cleaned to improve adhesion to the die attach material fillet (122). In practicing these operations, the following interfaces are targeted and their adhesion characteristics are improved: die attach material to die pad; die attach material to die; molding compound to die pad; and molding compound to die attach material.
摘要翻译：一种制造具有有机衬底的耐湿半导体器件的方法，其目标是具有分层和破裂潜力的半导体器件内的每个潜在关键界面。有机基板（110）被设计成包括其上形成有化学产生的氧化物层（118）的固体焊盘（116）。在分配之后，非常快速地分配并凝胶化有机硅基的管芯附着材料（108），以防止过量的流出。在经历清洁操作之后将半导体管芯（102）安装到基板上以从模具的背面去除污染物。在模塑复合物封装之后和随后的模具附着材料固化之后，清洁基底以提高对芯片连接材料圆角（122）的粘附。在实施这些操作时，以下接口是针对性的，并且其粘附特性得到改善：芯片附着材料到芯片焊盘; 模具附着材料; 模塑复合材料到模具垫; 并将模塑复合物模塑附着材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式