会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • PHOTOGATE CMOS PIXEL FOR 3D CAMERAS HAVING REDUCED INTRA-PIXEL CROSS TALK
    • 用于3D摄像机的光刻CMOS像素具有减少的像素内角度
    • US20090166684A1
    • 2009-07-02
    • US12344601
    • 2008-12-29
    • Giora YahavThomas Reiner
    • Giora YahavThomas Reiner
    • H01L31/101H01L31/02
    • H01L31/103H01L27/14609H01L27/1461H01L27/1463H01L27/14643
    • A CMOS photodetector pixel formed of a substrate, an epitaxial layer above the substrate including a first region having the same polarity but a lower impurity concentration as that of the substrate, and a gate arrangement including a first gate that forms a charge accumulation region in the epitaxial layer when the gate is energized, wherein the charge accumulation region extends deeper toward the substrate than in conventional constructions. The epitaxial layer includes a shielding structure for absorbing electrons generated therein by photons impinging on the pixel, except electrons generated close to the charge accumulation region. The shielding structure may have opposite polarity from that of the substrate, including a first portion under the first gate, and a second portion extending upward from the first portion at the margin of the pixel. Alternatively, the shielding structure may have the same polarity as the substrate, but a lower impurity concentration.
    • 由衬底形成的CMOS光电检测器像素,在衬底上方的外延层,其包括具有与衬底相同极性但较低杂质浓度的第一区域,以及栅极布置,其包括形成电荷累积区域的第一栅极 当栅极通电时,外延层,其中电荷累积区域比传统结构更向衬底延伸。 外延层包括用于吸收入射在像素上的光子吸收产生的电子的屏蔽结构,除了靠近电荷累积区产生的电子。 屏蔽结构可以具有与衬底相反的极性,包括在第一栅极下方的第一部分,以及在像素的边缘处从第一部分向上延伸的第二部分。 或者,屏蔽结构可以具有与衬底相同的极性,但是杂质浓度较低。