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    • 8. 发明授权
    • LED structure
    • LED结构
    • US08026527B2
    • 2011-09-27
    • US11952048
    • 2007-12-06
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/46H01L33/52H01L33/60
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 一层透明的导电材料与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。
    • 10. 发明授权
    • LED structure
    • LED结构
    • US08338848B2
    • 2012-12-25
    • US13214725
    • 2011-08-22
    • Ghulam HasnainSteven D. Lester
    • Ghulam HasnainSteven D. Lester
    • H01L33/46H01L33/52H01L33/60
    • H01L33/46H01L33/22H01L33/382H01L33/405H01L33/44
    • A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
    • 公开了一种发光器件,用于制造它的晶片及其制造方法。 器件和晶片包括第一导电类型的第一层,有源层和第二导电类型的层。 有源层覆盖第一层,有源层产生光。 第二层覆盖有源层,第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。 一层透明的导电材料与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。 反射率大于90%的镜面层沉积在第一层电介质材料上。