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1. 发明授权

US07799706B2 Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same 有权
标题翻译：中性束辅助原子层化学气相沉积装置及其处理方法
公开(公告)号：US07799706B2
公开(公告)日：2010-09-21
申请号：US12031498
申请日：2008-02-14
申请人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
发明人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3141 , C23C16/44 , C23C16/45536 , H01J2237/0041 , H01J2237/08 , H01J2237/3142 , H01L21/31604
摘要： A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.
摘要翻译：提供了一种中性束辅助原子层化学气相沉积（ALCVD）装置，用于均匀沉积填充平坦化层或沟槽的氧化物层，以增加氧化物层的均匀性和密度，使用由中性射束发生器产生的中性光束而无缝隙或发生在原子层沉积（ALD）或ALD样化学气相沉积（CVD））工艺中的空穴，从而解决当高密度平坦化层或具有宽度为形成65nm以下，并且改善下一代氧化物层隔离工艺。中性束辅助ALCVD装置包括：ALCVD装置，其沉积氧化物层以在半导体衬底中形成图案; 以及中性束发生器，其将离子束转换成中性光束，以便去除沉积在图案之间的氧化物层中的接缝或空隙，并将中性光束施加到沉积以形成图案的氧化物层。

2. 发明申请

US20090203226A1 NEUTRAL BEAM-ASSISTED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF PROCESSING SUBSTRATE USING THE SAME 有权
标题翻译：中性束辅助原子层化学蒸气沉积装置及使用其处理基板的方法
公开(公告)号：US20090203226A1
公开(公告)日：2009-08-13
申请号：US12031498
申请日：2008-02-14
申请人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
发明人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
IPC分类号： H01L21/316 , C23C16/44
CPC分类号： H01L21/3141 , C23C16/44 , C23C16/45536 , H01J2237/0041 , H01J2237/08 , H01J2237/3142 , H01L21/31604
摘要： A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.
摘要翻译：提供了一种中性束辅助原子层化学气相沉积（ALCVD）装置，用于均匀沉积填充平坦化层或沟槽的氧化物层，以增加氧化物层的均匀性和密度，使用由中性射束发生器产生的中性光束而无缝隙或发生在原子层沉积（ALD）或ALD样化学气相沉积（CVD））工艺中的空穴，从而解决当高密度平坦化层或具有宽度为形成65nm以下，并且改善下一代氧化物层隔离工艺。中性束辅助ALCVD装置包括：ALCVD装置，其沉积氧化物层以在半导体衬底中形成图案; 以及中性束发生器，其将离子束转换成中性光束，以便去除沉积在图案之间的氧化物层中的接缝或空隙，并将中性光束施加到沉积以形成图案的氧化物层。

3. 发明申请

US20090203221A1 APPARATUS AND METHOD FOR INCORPORATING COMPOSITION INTO SUBSTRATE USING NEUTRAL BEAMS 审中-公开
标题翻译：使用中性粒子将组合物合成到基材中的装置和方法
公开(公告)号：US20090203221A1
公开(公告)日：2009-08-13
申请号：US12031540
申请日：2008-02-14
申请人： Geun-young YEOM , Byoung-jae Park , Sung-woo Kim
发明人： Geun-young YEOM , Byoung-jae Park , Sung-woo Kim
IPC分类号： H01L21/3115 , B05B5/00
CPC分类号： H01L21/31155 , H01J37/32357 , H01J37/32422 , H01L29/40117
摘要： An apparatus and method for incorporating a composition into a substrate using neutral beams are provided to repeatedly process an oxide layer using the neutral beams having low energy to minimize electrical damage to the oxide layer and improve characteristics of the oxide layer. The apparatus is mounted in a plasma generating chamber, and includes: an ion beam generating gas inlet, which injects a gas for generating ion beams; an ion source, which generates the ion beams having a polarity from the gas introduced through the ion beam generating gas inlet; a grid assembly, which is installed on one end of the ion source; a reflector, which is aligned with the grid assembly and converts the ion beams to the neutral beams; and a stage, on which the substrate is placed on a traveling path of the neutral beams. Formation of the oxide layer and application of the neutral beams are repeatedly performed on the substrate so as to improve the characteristics of the oxide layer.
摘要翻译：提供了使用中性光束将组合物并入衬底中的装置和方法，以使用具有低能量的中性光束重复处理氧化物层，以最小化对氧化物层的电损伤并改善氧化物层的特性。该装置安装在等离子体发生室中，包括：离子束产生气体入口，其注入用于产生离子束的气体; 离子源，其产生具有从通过离子束产生气体入口引入的气体的极性的离子束; 安装在离子源一端的电网组件; 反射器，其与栅格组件对准并将离子束转换成中性光束; 以及其中衬底放置在中性梁的行进路径上的平台。在基板上反复进行氧化层的形成和中性光束的施加，以提高氧化物层的特性。

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