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1. 发明申请

US20080159004A1 PROGRAMMING NON-VOLATILE MEMORY WITH REDUCED PROGRAM DISTURB BY USING DIFFERENT PRE-CHARGE ENABLE VOLTAGES 有权
标题翻译：通过使用不同的预充电电压编程减少程序干扰的非易失性存储器
公开(公告)号：US20080159004A1
公开(公告)日：2008-07-03
申请号：US11618600
申请日：2006-12-29
申请人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at different voltages for particular non-volatile storage elements.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于特定的非易失性存储元件，以不同的电压提供一个或多个预充电使能信号。

2. 发明申请

US20080159002A1 PROGRAMMING NON-VOLATILE MEMORY WITH REDUCED PROGRAM DISTURB BY REMOVING PRE-CHARGE DEPENDENCY ON WORD LINE DATA 有权
标题翻译：通过在字线数据上移除预留费用来编程减少程序干扰的非易失性存储器
公开(公告)号：US20080159002A1
公开(公告)日：2008-07-03
申请号：US11618580
申请日：2006-12-29
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , G11C7/1048 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at higher voltages for certain memory cells that may have undergone partial programming.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于可能已经经过部分编程的某些存储器单元，在较高电压下提供一个或多个预充电使能信号。

3. 发明授权

US07433241B2 Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data 有权
标题翻译：通过消除对字线数据的预充电依赖来编程非易失性存储器，减少程序干扰
公开(公告)号：US07433241B2
公开(公告)日：2008-10-07
申请号：US11618580
申请日：2006-12-29
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , G11C7/1048 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at higher voltages for certain memory cells that may have undergone partial programming.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于可能已经经过部分编程的某些存储器单元，在较高电压下提供一个或多个预充电使能信号。

4. 发明授权

US07463531B2 Systems for programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages 有权
标题翻译：通过使用不同的预充电使能电压来减少编程干扰的非易失性存储器编程系统
公开(公告)号：US07463531B2
公开(公告)日：2008-12-09
申请号：US11618606
申请日：2006-12-29
申请人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at different voltages for particular non-volatile storage elements.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于特定的非易失性存储元件，以不同的电压提供一个或多个预充电使能信号。

5. 发明授权

US07468918B2 Systems for programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data 有权
标题翻译：用于通过消除对字线数据的预充电依赖来减少编程干扰的非易失性存储器编程系统
公开(公告)号：US07468918B2
公开(公告)日：2008-12-23
申请号：US11618594
申请日：2006-12-29
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , G11C7/1048 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at higher voltages for certain memory cells that may have undergone partial programming.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于可能已经经过部分编程的某些存储器单元，在较高电压下提供一个或多个预充电使能信号。

6. 发明授权

US07450430B2 Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages 有权
标题翻译：通过使用不同的预充电使能电压来编程非易失性存储器，减少编程干扰
公开(公告)号：US07450430B2
公开(公告)日：2008-11-11
申请号：US11618600
申请日：2006-12-29
申请人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at different voltages for particular non-volatile storage elements.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于特定的非易失性存储元件，以不同的电压提供一个或多个预充电使能信号。

7. 发明申请

US20080159003A1 SYSTEMS FOR PROGRAMMING NON-VOLATILE MEMORY WITH REDUCED PROGRAM DISTURB BY REMOVING PRE-CHARGE DEPENDENCY ON WORD LINE DATA 有权
标题翻译：通过在字线数据上删除预先依赖的方式编程减少程序干扰的非易失性存储器的系统
公开(公告)号：US20080159003A1
公开(公告)日：2008-07-03
申请号：US11618594
申请日：2006-12-29
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee , Gerrit Jan Hemink
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , G11C7/1048 , G11C11/5628 , G11C16/3418 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at higher voltages for certain memory cells that may have undergone partial programming.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于可能已经经过部分编程的某些存储器单元，在较高电压下提供一个或多个预充电使能信号。

8. 发明申请

US20080158991A1 SYSTEMS FOR PROGRAMMING NON-VOLATILE MEMORY WITH REDUCED PROGRAM DISTURB BY USING DIFFERENT PRE-CHARGE ENABLE VOLTAGES 有权
标题翻译：通过使用不同的预充电电压来编程具有减少程序干扰的非易失性存储器的系统
公开(公告)号：US20080158991A1
公开(公告)日：2008-07-03
申请号：US11618606
申请日：2006-12-29
申请人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Gerrit Jan Hemink , Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C7/00 , G11C7/06 , G11C16/06
CPC分类号： G11C16/3418 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427
摘要： Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at different voltages for particular non-volatile storage elements.
摘要翻译：在编程期间，未选择的非易失性存储元件组被提升以减少或消除连接到所选字线的目标但未选择的存储器单元的程序干扰。在将程序电压施加到所选择的字线并升高未选择的组之前，未选择的组被预先充电，以通过为未选择的组提供更大的增强电位来进一步减少或消除程序干扰。在预充电期间，对于特定的非易失性存储元件，以不同的电压提供一个或多个预充电使能信号。

9. 发明授权

US07706189B2 Non-volatile storage system with transitional voltage during programming 有权
标题翻译：在编程期间具有过渡电压的非易失性存储系统
公开(公告)号：US07706189B2
公开(公告)日：2010-04-27
申请号：US11753963
申请日：2007-05-25
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/12
摘要： To program one or more non-volatile storage elements, a set of programming pulses are applied to at least one selected non-volatile storage element and one or more particular unselected non-volatile storage elements, for example, via a common word line. A boosting voltage is applied to other unselected non-volatile storage elements during the programming process in order to boost the channels of the unselected non-volatile storage elements so that programming will be inhibited. Each of the programming pulses has a first intermediate magnitude, a second intermediate magnitude and a third magnitude. In one embodiment, the first intermediate magnitude is similar to or the same as the boosting voltage. The second intermediate magnitude is greater than the first intermediate magnitude, but less then the third magnitude. Such an arrangement can reduce the effects of program disturb.
摘要翻译：为了对一个或多个非易失性存储元件进行编程，例如通过公共字线将一组编程脉冲施加到至少一个选定的非易失性存储元件和一个或多个特定未选择的非易失性存储元件。在编程过程期间将升压电压施加到其它未选择的非易失性存储元件，以便增强未选择的非易失性存储元件的通道，从而禁止编程。每个编程脉冲具有第一中间幅度，第二中间幅度和第三幅度。在一个实施例中，第一中间幅度与升压电压相似或相同。第二中间幅度大于第一中间幅度，但小于第三幅度。这样的布置可以减少节目干扰的影响。

10. 发明授权

US07656703B2 Method for using transitional voltage during programming of non-volatile storage 有权
标题翻译：在非易失性存储器编程期间使用过渡电压的方法
公开(公告)号：US07656703B2
公开(公告)日：2010-02-02
申请号：US11753958
申请日：2007-05-25
申请人： Yingda Dong , Jeffrey W. Lutze , Dana Lee
发明人： Yingda Dong , Jeffrey W. Lutze , Dana Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/12 , G11C16/0483 , G11C16/10
摘要： To program one or more non-volatile storage elements, a set of programming pulses are applied to at least one selected non-volatile storage element and one or more particular unselected non-volatile storage elements, for example, via a common word line. A boosting voltage is applied to other unselected non-volatile storage elements during the programming process in order to boost the channels of the unselected non-volatile storage elements so that programming will be inhibited. Each of the programming pulses has a first intermediate magnitude, a second intermediate magnitude and a third magnitude. In one embodiment, the first intermediate magnitude is similar to or the same as the boosting voltage. The second intermediate magnitude is greater than the first intermediate magnitude, but less then the third magnitude. Such an arrangement can reduce the effects of program disturb.
摘要翻译：为了对一个或多个非易失性存储元件进行编程，例如通过公共字线将一组编程脉冲施加到至少一个选定的非易失性存储元件和一个或多个特定未选择的非易失性存储元件。在编程过程期间将升压电压施加到其它未选择的非易失性存储元件，以便增强未选择的非易失性存储元件的通道，使得编程将被禁止。每个编程脉冲具有第一中间幅度，第二中间幅度和第三幅度。在一个实施例中，第一中间幅度与升压电压相似或相同。第二中间幅度大于第一中间幅度，但小于第三幅度。这样的布置可以减少节目干扰的影响。

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