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    • 3. 发明申请
    • Method of fabricating MIM capacitor
    • 制造MIM电容的方法
    • US20050142851A1
    • 2005-06-30
    • US11027838
    • 2004-12-29
    • Yung Kim
    • Yung Kim
    • H01L27/108H01L21/02H01L23/522H01L21/4763H01L23/48H01L23/52H01L29/40
    • H01L28/40H01L23/5223H01L2924/0002H01L2924/00
    • A method of fabricating an MIM capacitor is provided, by which higher capacitance can be secured per unit volume or area by forming a dual-stack type capacitor to increase an effective area of the capacitor. The method includes patterning a first metal layer, forming a planarized second insulating layer having a trench exposing a portion of the patterned first metal layer, forming a second metal layer within the trench, forming a first dielectric layer on the second metal layer, forming first via holes exposing the patterned first metal layer, forming first plugs filling the trench and first via holes, forming a third metal layer thereover, forming a second dielectric layer on the third metal layer, forming a patterned fourth metal layer on the second dielectric layer, patterning the second dielectric layer and the third metal layer, forming a planarized third insulating layer having second via holes therein, and forming a patterned fifth metal layer on the third insulating layer.
    • 提供了一种制造MIM电容器的方法,通过形成双堆叠型电容器来增加电容器的有效面积,通过该方法可以确保单位体积或面积上的较高电容。 该方法包括图案化第一金属层,形成具有暴露图案化的第一金属层的一部分的沟槽的平坦化的第二绝缘层,在沟槽内形成第二金属层,在第二金属层上形成第一介电层,形成第一金属层 通孔暴露图案化的第一金属层,形成填充沟槽的第一插塞和第一通孔,在其上形成第三金属层,在第三金属层上形成第二介电层,在第二介电层上形成图案化的第四金属层, 图案化第二介电层和第三金属层,形成其中具有第二通孔的平坦化第三绝缘层,并在第三绝缘层上形成图案化的第五金属层。
    • 10. 发明申请
    • Method of forming metal line in semiconductor device
    • 在半导体器件中形成金属线的方法
    • US20060141773A1
    • 2006-06-29
    • US11321119
    • 2005-12-28
    • Yung Kim
    • Yung Kim
    • H01L21/4763
    • H01L21/76807H01L21/31144H01L2221/1021
    • A method of forming a metal line in a semiconductor device reduces production costs through a simplified fabricating process. The method includes steps of forming a first metal line on a semiconductor substrate; forming an insulating layer over the semiconductor substrate including the first metal line; coating a photoresist on the insulating layer; aligning a diffraction mask having regions or patterns differing from each other in transmittance over the photoresist; patterning the photoresist by exposure and development using the diffraction mask to form a patterned photoresist having regions that differ in thickness; forming a via hole and a trench by etching the patterned photoresist and the insulating layer simultaneously to expose a prescribed portion of the first metal line; removing the remaining photoresist; and forming a second metal line and a contact in the trench and the via hole.
    • 在半导体器件中形成金属线的方法通过简化的制造工艺降低了生产成本。 该方法包括以下步骤:在半导体衬底上形成第一金属线; 在包括第一金属线的半导体衬底上形成绝缘层; 在绝缘层上涂覆光致抗蚀剂; 对准具有在光致抗蚀剂上的透射率彼此不同的区域或图案的衍射掩模; 通过使用衍射掩模的曝光和显影来图案化光致抗蚀剂以形成具有不同厚度区域的图案化光致抗蚀剂; 通过同时蚀刻图案化的光致抗蚀剂和绝缘层来形成通孔和沟槽,以暴露第一金属线的规定部分; 去除剩余的光致抗蚀剂; 以及在沟槽和通孔中形成第二金属线和接触件。