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    • 10. 发明申请
    • MULTILAYER COATINGS FORMED ON ALIGNED ARRAYS OF CARBON NANOTUBES
    • 在碳纳米管对齐阵列上形成的多层涂层
    • US20150311461A1
    • 2015-10-29
    • US14434118
    • 2013-10-21
    • GEORGIA TECH RESEARCH CORPORATION
    • Baratunde ColaAsha SharmaVirendra Singh
    • H01L51/05H01L51/00
    • Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nano-structures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.
    • 本文描述了包含碳纳米结构氧化物金属二极管的阵列,例如碳纳米管(CNT) - 氧化物 - 金属二极管及其制造和使用方法。 在一些实施方案中,阵列包含垂直排列的碳纳米结构,例如涂覆有电介质层(例如金属氧化物)的保形涂层的多壁碳纳米管(MWCNT)。 碳纳米结构的尖端涂覆有低功函数金属,例如钙或铝,以在尖端处形成纳米结构氧化物 - 金属界面。 由于阵列本身具有较低的电容,因此阵列可以用作高达约40 peta赫兹频率的整流天线。 本文描述的阵列在低至0.3V的低导通电压和高达约7800mA / cm 2的大电流密度下产生高不对称性和非线性,并且精馏比为至少约10,15,20,25,30,35 ,40,45,50,55或60。