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    • 1. 发明授权
    • Multi-chamber vacuum processing and transfer system
    • 多室真空处理和输送系统
    • US07874783B2
    • 2011-01-25
    • US12406961
    • 2009-03-19
    • George Xinsheng GuoKai-an Wang
    • George Xinsheng GuoKai-an Wang
    • H01L21/677
    • H01L21/67751H01L21/6719H01L21/67196Y10S414/139
    • An apparatus for processing a work piece in a vacuum environment includes a master process chamber that can be exhausted to a sub-atmospheric air pressure or to be filled with a desirable gas, a transfer chamber configured to receive the work piece from outside of the master process chamber, one or more processing stations inside the master process chamber, a rotation plate configured to receive the work piece and to move the work piece to receive one or more processing operations, and a first transport mechanism configured to transfer the work piece from the transfer chamber on to the rotation plate. The transfer chamber is at least partially enclosed in the master process chamber and can be vacuum sealed off from the master process chamber.
    • 一种用于在真空环境中处理工件的设备包括:主处理室,其能够被排出到次大气压或者填充有所需的气体;传送室,被配置为从母板的外部接收工件 处理室,主处理室内的一个或多个处理站,配置成接收工件并移动工件以接收一个或多个处理操作的旋转板,以及第一传送机构,其被配置为将工件从 传送室到旋转板上。 传送室至少部分地封闭在主处理室中,并且可以从主处理室真空密封。
    • 2. 发明申请
    • MULTI-CHAMBER VACUUM PROCESSING AND TRANSFER SYSTEM
    • 多室真空加工和传送系统
    • US20090180847A1
    • 2009-07-16
    • US12406961
    • 2009-03-19
    • George Xinsheng GuoKai-an Wang
    • George Xinsheng GuoKai-an Wang
    • H01L21/677H01L21/68
    • H01L21/67751H01L21/6719H01L21/67196Y10S414/139
    • An apparatus for processing a work piece in a vacuum environment includes a master process chamber that can be exhausted to a sub-atmospheric air pressure or to be filled with a desirable gas, a transfer chamber configured to receive the work piece from outside of the master process chamber, one or more processing stations inside the master process chamber, a rotation plate configured to receive the work piece and to move the work piece to receive one or more processing operations, and a first transport mechanism configured to transfer the work piece from the transfer chamber on to the rotation plate. The transfer chamber is at least partially enclosed in the master process chamber and can be vacuum sealed off from the master process chamber.
    • 一种用于在真空环境中处理工件的设备包括:主处理室,其能够被排出到次大气压或者填充有所需的气体;传送室,被配置为从母板的外部接收工件 处理室,主处理室内的一个或多个处理站,配置成接收工件并移动工件以接收一个或多个处理操作的旋转板,以及第一传送机构,其被配置为将工件从 传送室到旋转板上。 传送室至少部分地封闭在主处理室中,并且可以从主处理室真空密封。
    • 4. 发明授权
    • Deposition system and methods having improved material utilization
    • 沉积系统和方法具有改善的材料利用率
    • US08500962B2
    • 2013-08-06
    • US13160511
    • 2011-06-15
    • George X. GuoKai-an Wang
    • George X. GuoKai-an Wang
    • C23C14/00C23C14/32C25B9/00C25B11/00C25B13/00
    • C23C14/35H01J37/3408H01J37/3455H01J37/347
    • A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.
    • 一种用于衬底处理的方法包括:通过磁控管在靶的溅射表面的整个宽度上沿第一方向产生磁场。 磁控管可以产生在溅射表面上分开距离S的两个侵蚀槽。 该方法包括沿着线性行进路径沿着第一段连续地将磁控管连续移动第一段距离S。 线性行进路径沿着垂直于第一方向的第二方向。 该方法包括将材料连续溅射溅射表面,并在第一段期间将材料沉积在衬底上,并且以高于第一速度的第二速度沿着线性行进路径将磁控管移动到第二段中的距离S,而没有 将材料溅射溅射表面或以显着较低的速率溅射材料。
    • 7. 发明申请
    • DEPOSITION SYSTEM AND METHODS HAVING IMPROVED MATERIAL UTILIZATION
    • 具有改进的材料利用的沉积系统和方法
    • US20110240461A1
    • 2011-10-06
    • US13160511
    • 2011-06-15
    • George X. GuoKai-an Wang
    • George X. GuoKai-an Wang
    • C23C14/35
    • C23C14/35H01J37/3408H01J37/3455H01J37/347
    • A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.
    • 一种用于衬底处理的方法包括:通过磁控管在靶的溅射表面的整个宽度上沿第一方向产生磁场。 磁控管可以产生在溅射表面上分开距离S的两个侵蚀槽。 该方法包括沿着线性行进路径沿着第一段连续地将磁控管连续移动第一段距离S。 线性行进路径沿着垂直于第一方向的第二方向。 该方法包括将材料连续溅射溅射表面,并在第一段期间将材料沉积在衬底上,并且以高于第一速度的第二速度沿着线性行进路径将磁控管移动到第二段中的距离S,而没有 将材料溅射溅射表面或以显着较低的速率溅射材料。