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1. 发明授权

US07679102B2 Carbon passivation in solid-state light emitters 有权
标题翻译：固态发光体中的碳钝化
公开(公告)号：US07679102B2
公开(公告)日：2010-03-16
申请号：US11642786
申请日：2006-12-21
申请人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill , Peter Mascher , Jacek Wojcik
发明人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill , Peter Mascher , Jacek Wojcik
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： H05B33/145 , B82Y20/00 , H01L33/18 , H05B33/22
摘要： A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, as well as reliability and lifetime. The emission wavelengths from the nano-particles can be made to correspond to the quantization energy of the semiconductor nano-particles, which allows the entire visible range of the spectrum be covered. Ideally an engineered structure of alternating active and buffer material layers are disposed between AC or DC electrodes, which generate an electric field. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and are designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the nano-particles in the adjacent active layer at a sufficient excitation energy to emit light efficiently at a desired wavelength.
摘要翻译：固态发光器件包括一个或多个活性层，其包含主体基质中的半导体纳米颗粒，硅纳米颗粒在二氧化硅或氮化硅中。通过缩短衰减时间和增强发射光谱以及可靠性和寿命，在活性层中引入碳提供了很大的性能提高。可以使来自纳米颗粒的发射波长对应于半导体纳米颗粒的量子化能量，这允许覆盖光谱的整个可见光范围。理想地，交替的有源和缓冲材料层的工程结构设置在产生电场的AC或DC电极之间。缓冲层由宽带隙半导体或电介质材料组成，并且被设计成沿所施加的电场的方向具有厚度，以确保通过其的电子通过其吸收足够的能量来激发相邻活性物质中的纳米颗粒层以足够的激发能量以期望的波长有效发光。

2. 发明授权

US07888686B2 Pixel structure for a solid state light emitting device 失效
标题翻译：用于固态发光器件的像素结构
公开(公告)号：US07888686B2
公开(公告)日：2011-02-15
申请号：US12015285
申请日：2008-01-16
申请人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
发明人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H05B33/22
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

3. 发明授权

US07800117B2 Pixel structure for a solid state light emitting device 有权
标题翻译：用于固态发光器件的像素结构
公开(公告)号：US07800117B2
公开(公告)日：2010-09-21
申请号：US11642813
申请日：2006-12-21
申请人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
发明人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
IPC分类号： H01L33/06 , H01L21/00
CPC分类号： H05B33/08 , Y02B20/32
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并减少了相关的有害的大电场的影响。

4. 发明申请

US20080246046A1 Pixel Structure For A Solid State Light Emitting Device 失效
标题翻译：固态发光装置的像素结构
公开(公告)号：US20080246046A1
公开(公告)日：2008-10-09
申请号：US12015285
申请日：2008-01-16
申请人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
发明人： George Chik , Thomas MacElwee , Iain Calder , E. Steven Hill
IPC分类号： H01L33/00
CPC分类号： H05B33/22
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

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