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    • 1. 发明授权
    • Reduction of selenium alloy fractionation
    • 还原硒合金分馏
    • US4822712A
    • 1989-04-18
    • US179375
    • 1988-04-08
    • Geoffrey M. FoleySantokh S. BadeshaPaul CherinKenneth J. PheilshifterPhilip G. Perry
    • Geoffrey M. FoleySantokh S. BadeshaPaul CherinKenneth J. PheilshifterPhilip G. Perry
    • G03G5/08B22F1/00C01B19/00C01B19/02C01B19/04G03G5/082C21D1/00
    • B22F1/0085C01B19/007C01B19/02G03G5/08207C01P2002/02C01P2002/70C01P2004/50C01P2004/61C01P2004/84
    • An alloy treatment process is disclosed which comprises providing particles of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, forming crystalline nuclei on at least the surface of the particles while maintaining the substantial surface integrity of the particles, heating the particles to an initial temperature between about 50.degree. C. and about 80.degree. C. for at least about 30 minutes to form a thin, substantially continuous layer of crystalline material on the surface of the particles while maintaining the core of selenium alloy in the particles in an amorphous state, and rapidly heating the particles to at least a second temperature below the softening temperature of the particles that is at least 20.degree. C. higher than the initial temperature and between about 85.degree. C. and about 130.degree. C. to crystallize about 5 to 100 percent by weight of the amorphous core of selenium alloy in the particles while maintaining the integrity of the alloy particles and inhibiting the loss of selenium rich material. The resulting crystallized particles in shot or pellet form may be rapidly heated in a vacuum chamber to vacuum deposit the alloy onto a substrate.
    • 公开了一种合金处理方法,其包括提供包含非晶硒的合金颗粒和选自碲,砷及其混合物的合金成分,所述颗粒的平均粒度为至少约300微米,平均粒径为 重量小于约1000mg,在至少颗粒表面上形成晶核,同时保持颗粒的基本表面完整性,将颗粒加热至约50℃至约80℃的初始温度,以便在 至少约30分钟,以在颗粒表面上形成薄的,基本上连续的结晶材料层,同时将颗粒中的硒合金的核保持在非晶状态,并将颗粒快速加热到低于软化的至少第二温度 颗粒的温度比初始温度高至少20℃,在约8℃之间 5℃和约130℃下,使颗粒中的硒合金的无定形核心的约5-100重量%结晶,同时保持合金颗粒的完整性并抑制富硒材料的损失。 所得到的结晶颗粒或颗粒形式可以在真空室中快速加热以将合金真空沉积到基底上。
    • 2. 发明授权
    • Vacuum deposition of selenium alloy
    • 真空沉积硒合金
    • US4842973A
    • 1989-06-27
    • US179374
    • 1988-04-08
    • Santokh S. BadeshaPaul CherinGeoffrey M. T. FoleyBarry A. LeesJohn Wozniak
    • Santokh S. BadeshaPaul CherinGeoffrey M. T. FoleyBarry A. LeesJohn Wozniak
    • G03G5/08C23C14/06G03G5/082
    • C23C14/0623G03G5/08207
    • A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate. A plurality of selenium containing layers may be formed by providing in a vacuum chamber at least one first layer crucible containing particles of selenium or a sellenium alloy, at least one second layer crucible containing particles of an alloy comprising selenium, and a substrate, applying a partial vacuum to the vacuum chamber, heating the particles in the first layer crucible to deposit a thin continuous selenium or a selenium alloy first layer on the substrate, maintaining the particles in the second layer crucible at a first temperature below about 130.degree. C. while the thin continuous selenium or a selenium alloy first layer is being deposited on the substrate, and rapidly heating the particles in the second layer crucible to a second temperature between about 250.degree. C. and about 450.degree. C. to deposit a thin continuous selenium alloy second layer on the substrate.
    • 公开了一种用于制造电子照相成像构件的方法,其包括在真空室中提供至少一个坩埚,所述坩埚含有包含硒的合金颗粒和选自碲,砷及其混合物的合金成分, 真空室,向真空室施加部分真空,并将坩埚快速加热至约250℃至450℃之间的温度,以在衬底上沉积薄的连续的硒合金层。 多个含硒层可以通过在真空室中提供至少一个含有硒或钪合金颗粒的第一层坩埚,至少一个第二层坩埚,该第二层坩埚含有包含硒的合金颗粒和基材, 对真空室进行部分真空,加热第一层坩埚中的颗粒以在基板上沉积薄的连续硒或硒合金第一层,将第二层坩埚中的颗粒保持在低于约130℃的第一温度,同时 薄的连续硒或硒合金第一层被沉积在基底上,并将第二层坩埚中的颗粒快速加热至约250℃至约450℃之间的第二温度以沉积薄的连续的硒合金 第二层。
    • 10. 发明授权
    • Perfluorinated polyether release agent for fuser members
    • 用于定影器构件的全氟聚醚脱模剂
    • US07491435B2
    • 2009-02-17
    • US11444559
    • 2006-05-31
    • David J. GervasiBryan J. RoofSantokh S. Badesha
    • David J. GervasiBryan J. RoofSantokh S. Badesha
    • B32B1/08B32B25/14B32B25/20G03G15/20
    • G03G15/2057G03G2215/2051Y10T428/1393Y10T428/3154Y10T428/31663
    • A fuser member having a substrate; an outer layer containing a silicone or fluoropolymer; and a release agent material coating on the outer layer, wherein the release agent material coating includes a perfluorinated polyether having a skeleton of Formulas I or II or mixtures thereof: CF3—(CF2CF2)m—O—(R1R2O)—(R3R3O)n—(R3O)p—(CF2)q—CF3  Formula I wherein R1 is selected from the group consisting of CF2, CF—CF3 and —NR4R5; R2 is selected from the group consisting of CF2, CF—CF3, and —NR4R5; R3 is selected from the group consisting of CF2 and CF3; R4 is selected from the group consisting of hydrogen, alkyl group having from about 1 to about 18 carbon atoms, arylalkyl group having from about 7 to about 18 carbon atoms, mercapto, hydride and carbinol functional group; R5 is selected from the group consisting of alkyl having from about 1 to about 20 carbons, and a fluoroalkyl having from about 2 to about 10 carbons; m is a number of 0 or 1; n is a number of from about 0 to about 500; p is a number of from about 0 to about 100; q is a number of 0 or 1; and p+n is a number of from about 180 to about 500; and R1—(CF2CF2)m—O—(R2R2O)n—(R2O)p—(CF2)q—CF3—R1  Formula II wherein R1 is CF3; R2 is CF2, or CF—CF3; m is a number of 0 or 1; n is a number of from about 0 to about 500; p is a number of from about 0 to about 100; q is a number of 0 or 1; and p+n is a number of from about 180 to about 500.
    • 具有基板的定影器构件; 含有硅酮或含氟聚合物的外层; 以及在所述外层上涂覆的脱模剂材料,其中所述脱模剂材料涂层包括具有式I或II骨架的全氟化聚醚或其混合物:<?in-line-formula description =“In-line Formulas”end = “引线”→CF 3 - (CF 2 CF 2)mO-(R 1 R 2 O) - (R 3 R 3 O)n - (R 3 O)p - (CF 2)q -CF 3式I <βin-line-formula description =“In-line Formulas =“尾”→其中R1选自CF2,CF-CF3和-NR4R5; R2选自CF2,CF-CF3和-NR4R5; R3选自CF2和CF3; R 4选自氢,具有约1至约18个碳原子的烷基,具有约7至约18个碳原子的芳基烷基,巯基,氢化物和甲醇官能团; R5选自具有约1至约20个碳的烷基和具有约2至约10个碳的氟代烷基; m是0或1的数字; n为约0至约500的数; p是约0至约100的数; q是0或1的数字; 并且p + n为约180至约500的数; R 1 - (CF 2 CF 2)m O - (R 2 R 2 O)n - (R 2 O)p - (CF 2)q CF 3-R 1式II <?in-line-formula description =“In-line Formulas”end =“tail”?>其中R1是CF3; R2是CF2或CF-CF3; m是0或1的数字; n为约0至约500的数; p是约0至约100的数; q是0或1的数字; 而p + n为约180至约500的数。