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    • 2. 发明申请
    • Metamorphic avalanche photodetector
    • 变质雪崩光电探测器
    • US20060202243A1
    • 2006-09-14
    • US11077899
    • 2005-03-11
    • Geoffrey KinseyDmitri KrutJoseph BoisvertChristopher FetzerRichard King
    • Geoffrey KinseyDmitri KrutJoseph BoisvertChristopher FetzerRichard King
    • H01L31/062
    • H01L31/1075H01L31/03046
    • A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multiplication structure that receives the primary charge carriers from the metamorphic absorption structure and responsively produces secondary charge carriers. An output electrical contact is in electrical communication with the active structure to collect at least some of the secondary charge carriers. A buffer layer lies between the substrate and the active structure, between the active structure and the output electrical contact, or between the metamorphic absorption structure and the avalanche multiplication structure. A lattice parameter of the buffer layer varies with position through a thickness of the buffer layer.
    • 变质雪崩光电探测器包括衬底和支撑在衬底上的活性结构。 活性结构具有吸收光并响应地产生初级电荷载流子的变质吸收结构,以及从变质吸收结构接收初级电荷载流子并且响应地产生次级载流子的雪崩倍增结构。 输出电触点与有源结构电连通以收集至少一些次电荷载体。 缓冲层位于衬底与有源结构之间,有源结构与输出电接触之间,或变质吸收结构与雪崩倍增结构之间。 缓冲层的晶格参数通过缓冲层的厚度随位置而变化。