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1. 发明授权

US06576211B1 Crystal-containing material 失效
标题翻译：含晶体材料
公开(公告)号：US06576211B1
公开(公告)日：2003-06-10
申请号：US09555528
申请日：2000-08-04
申请人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges , Moosa Mahomed Adia
发明人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges , Moosa Mahomed Adia
IPC分类号： C01B3106
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： A method of making a bonded, coherent material comprising a mass of crystals, preferably diamond crystals, in a matrix is provided. The steps include providing a source of the crystals of the type to be grown and which are substantially free of macroscopically faceted surfaces, producing a reaction mass by bringing the source crystals into contact with a suitable solvent/catalyst, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth in the reaction zone of a high temperature/high pressure apparatus to produce the material and removing the material from the reaction zone, the conditions of crystal growth being chosen such that the source crystals are converted to crystals having developed macroscopic facets of low Miller index. Preferably the conditions of elevated temperature and pressure used are such that the Wulff effect dominates.
摘要翻译：提供了一种制备包含矩阵中的大量晶体，优选金刚石晶体的粘结的粘结材料的方法。这些步骤包括提供待生长的晶体的源，并且基本上没有宏观面刻面，通过使源晶体与合适的溶剂/催化剂接触而产生反应物质，使反应物料经受在高温/高压装置的反应区中适合于晶体生长的升高的温度和压力以产生材料并从反应区除去材料，选择晶体生长条件使得源晶体转变为具有发展低米勒指数的宏观面。优选地，使用的升高的温度和压力的条件使得Wulff效应占主导地位。

2. 发明授权

US06270548B1 Sintering process for diamond and diamond growth 失效
标题翻译：钻石和钻石生长的烧结过程
公开(公告)号：US06270548B1
公开(公告)日：2001-08-07
申请号：US09403009
申请日：1999-11-23
申请人： James Wilbert Campbell , Moosa Mahomed Adia , Geoffrey John Davies , Raymond Albert Chapman , Klaus Tank , Aulette Stewart , Lesley Kay Hedges
发明人： James Wilbert Campbell , Moosa Mahomed Adia , Geoffrey John Davies , Raymond Albert Chapman , Klaus Tank , Aulette Stewart , Lesley Kay Hedges
IPC分类号： C22C2600
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , Y10T428/30
摘要： A method of making a bonded, coherent material comprising a mass of diamond crystals in a matrix, which optionally contains another phase. The method includes the steps of providing a source of diamond crystals, providing a plurality of diamond centers defined by diamond crystals, producing a reaction mass by bringing the source and growth centers into contact with a solvent/catalyst, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth in the reaction zone of a high temperature/high pressure apparatus to produce the material, and removing the material from the reaction zone. The method is characterized by providing the necessary supersaturation of carbon in the solvent/catalyst, at least in part and preferably predominantly, by a selection of particle size difference between the source crystal and the growth centers. The mass of diamond crystals in the matrix of the bonded, coherent material of the invention has a high concentration of twinned diamonds.
摘要翻译：制造粘结的粘合材料的方法，其包括在矩阵中的大量金刚石晶体，其任选地包含另一相。该方法包括以下步骤：提供金刚石晶体源，提供由金刚石晶体限定的多个金刚石中心，通过使源和生长中心与溶剂/催化剂接触产生反应物质，使反应物料经受在高温/高压装置的反应区中适合于晶体生长的升高的温度和压力以产生材料，以及从反应区中除去材料。该方法的特征在于在溶剂/催化剂中至少部分优选地通过选择源晶体和生长中心之间的粒度差异提供必要的过饱和碳。本发明粘结的粘结材料的基质中的金刚石晶体的质量具有高浓度的双晶金刚石。

3. 发明授权

US06676750B1 Growth of diamond clusters 失效
标题翻译：钻石簇的生长
公开(公告)号：US06676750B1
公开(公告)日：2004-01-13
申请号：US10089921
申请日：2002-08-01
申请人： Geoffrey John Davies , Raymond Albert Chapman , Lesley Kay Hedges , Aulette Stewart
发明人： Geoffrey John Davies , Raymond Albert Chapman , Lesley Kay Hedges , Aulette Stewart
IPC分类号： C30B2502
CPC分类号： B01J3/062 , B01J23/74 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , C01B32/25
摘要： A diamond cluster includes a core and an overgrown region containing a plurality of diamond crystallites extending outwards from the core, the majority of the crystallites having a cross-sectional area which increases as the distance of the crystallite from the core increases. Generally, at least 80% of the crystallites have a cross-sectional area which increases as the distance of the crystallite from the core increases. Furthermore, a method of producing a plurality of the diamond clusters includes the stops of providing a source of carbon, providing a plurality of growth center particles, each comprising a bonded mass of constituent particles, producing a reaction mass by bringing the carbon source and growth center particles into contact with a solvent/catalyst, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth, and recovering a plurality of diamond clusters from the reaction mass.
摘要翻译：金刚石簇包括芯部和含有多个从芯部向外延伸的金刚石微晶的长满的区域，大部分微晶具有随着微晶与芯的距离增加而增加的横截面面积。通常，至少80％的微晶具有随微晶与芯的距离增加而增加的横截面面积。此外，制造多个金刚石簇的方法包括提供碳源的停止点，提供多个生长中心颗粒，每个生长中心颗粒包含结合质量的构成颗粒，通过使碳源和生长产生反应块中心颗粒与溶剂/催化剂接触，使反应物质经受适于晶体生长的升高温度和压力的条件，并从反应物质中回收多个金刚石簇。

4. 发明授权

US06497853B1 Diamond growth 失效
标题翻译：钻石增长
公开(公告)号：US06497853B1
公开(公告)日：2002-12-24
申请号：US09403017
申请日：1999-11-23
申请人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges
发明人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges
IPC分类号： C01B3106
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/068
摘要： Diamond crystals may be grown by providing a source of diamond crystals, providing a plurality of growth centers defined by diamond crystals, mixing the source and growth center diamond crystals with a solvent/catalyst in particulate form to form a reaction mass, subjecting the reaction mass to conditions of elevated temperature and pressure suitable for crystal growth, and recovering the diamond crystals. The necessary supersaturation of carbon is achieved in the solvent/catalyst, at least in part, and preferably predominantly, by a selection of the particle size difference between the source crystal and the growth centers. The mass of diamond crystals produced by this method has a high concentration of twinned diamonds.
摘要翻译：金刚石晶体可以通过提供金刚石晶体源生长，提供由金刚石晶体限定的多个生长中心，将源和生长中心金刚石晶体与颗粒形式的溶剂/催化剂混合以形成反应物质，使反应物质适用于晶体生长的升高的温度和压力的条件，以及回收金刚石晶体。在溶剂/催化剂中，至少部分地，优选主要通过选择源晶体和生长中心之间的粒径差异来实现碳的必要过饱和。通过该方法生产的金刚石晶体的质量具有高浓度的双晶钻石。

5. 发明授权

US06984448B1 Cubic boron nitride clusters 有权
标题翻译：立方氮化硼簇
公开(公告)号：US06984448B1
公开(公告)日：2006-01-10
申请号：US10129959
申请日：2000-11-17
申请人： Geoffrey John Davies , Raymond Albert Chapman , Lesley Kay Hedges , Aulette Stewart , Bronwyn Annette Roberts
发明人： Geoffrey John Davies , Raymond Albert Chapman , Lesley Kay Hedges , Aulette Stewart , Bronwyn Annette Roberts
IPC分类号： C30B23/00 , B32B18/00 , C01B21/064
CPC分类号： C01B21/064 , B01J3/062 , B01J2203/0645 , B01J2203/066 , B01J2203/068 , B01J2203/0685 , C01P2004/03 , C01P2004/45 , C01P2004/61 , C04B35/5831 , Y10T428/2982
摘要： A cubic boron nitride cluster comprises a core (10) and an overgrown region, the overgrown region containing a plurality of cubic boron nitride crystallites (12) extending outwards from the core (10). The majority of the cubic boron nitride crystallites (12) have a cross-sectional area which increases as the distance from the core (10) increases. A method of producing cubic boron nitride clusters is also provided.
摘要翻译：立方氮化硼簇包括芯（10）和杂草长的区域，所述杂草生长区域包含从芯（10）向外延伸的多个立方氮化硼微晶（12）。大部分立方氮化硼微晶（12）具有随着与芯（10）的距离增加而增加的横截面面积。还提供了一种生产立方氮化硼簇的方法。

6. 发明授权

US06835365B1 Crystal growth 有权
标题翻译：晶体生长
公开(公告)号：US06835365B1
公开(公告)日：2004-12-28
申请号：US09555518
申请日：2000-08-23
申请人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges
发明人： Geoffrey John Davies , Raymond Albert Chapman , Aulette Stewart , Lesley Kay Hedges
IPC分类号： C01B3106
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/068
摘要： The invention provides a mass of crystals, particularly diamond crystals, having a size of less than 100 microns and in which mass the majority of the crystals are faceted single crystals. The invention further provides a method of producing such a mass of crystals which utilizes crystal growth under elevated temperature and pressure conditions, the supersaturation driving force necessary for crystal growth being dependent, at least in part, on the difference in surface free energy between low Miller index surfaces and high Miller index surfaces of the crystals. Preferably, the method is carried out under conditions where the Wulff effect dominates.
摘要翻译：本发明提供了一种晶体，特别是具有小于100微米尺寸的金刚石晶体，并且其中大部分晶体是刻面单晶。本发明进一步提供了一种制造这种在升高的温度和压力条件下使用晶体生长的晶体块的方法，晶体生长所需的过饱和驱动力至少部分地取决于低米勒之间的表面自由能的差异指数表面和晶体的高米勒指数表面。优选地，该方法在Wulff效应占优势的条件下进行。

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