专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06400742B1 Semiconductor laser and method of fabricating same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US06400742B1
公开(公告)日：2002-06-04
申请号：US09498372
申请日：2000-02-04
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087 , H01S2301/166
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.
摘要翻译：公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率光限制层20的折射率大于p型GaAlN包覆层的折射率。

2. 发明授权

US6031858A Semiconductor laser and method of fabricating same 失效
公开(公告)号：US6031858A
公开(公告)日：2000-02-29
申请号：US925764
申请日：1997-09-09
申请人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
发明人： Genichi Hatakoshi , Masaaki Onomura , John Rennie , Masayuki Ishikawa , Shinya Nunoue , Mariko Suzuki
IPC分类号： H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/32
CPC分类号： H01S5/32341 , H01S2301/166 , H01S5/0421 , H01S5/0425 , H01S5/22 , H01S5/2219 , H01S5/2231 , H01S5/4043 , H01S5/405 , H01S5/4087
摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

3. 发明授权

US5153889A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5153889A
公开(公告)日：1992-10-06
申请号：US747128
申请日：1991-08-19
申请人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka , Kazuhiko Itaya , Genichi Hatakoshi , Mariko Suzuki
发明人： Hideto Sugawara , Masayuki Ishikawa , Yoshihiro Kokubun , Yukie Nishikawa , Shigeya Naritsuka , Kazuhiko Itaya , Genichi Hatakoshi , Mariko Suzuki
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/22 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/0025 , H01L33/0066 , H01L33/10 , H01L33/14 , H01L33/30
摘要： Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.
摘要翻译：公开了一种半导体发光器件，包括半导体衬底，形成在衬底的前表面上并由InGaAlP有源层组成的双异质结构部分和其间夹有有源层的下和上和外包层，形成的第一电极在双异质结构部分的表面的一部分中，以及形成在基板的背面上的第二电极。由GaAlAs形成的电流扩散层介于双异质结构部分和第一电极之间，所述电流扩散层的厚度为5至30微米，载流子浓度为5×10 17 cm -3至5×10 18 cm -3。

4. 发明授权

US4987096A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US4987096A
公开(公告)日：1991-01-22
申请号：US450063
申请日：1989-12-13
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325 , Y10S148/025 , Y10S148/095
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

5. 发明授权

US5181218A Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
标题翻译：具有非吸收镜结构的半导体激光器的制造方法
公开(公告)号：US5181218A
公开(公告)日：1993-01-19
申请号：US619606
申请日：1990-11-29
申请人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Hajime Okuda , Hideo Shiozawa , Kazuhiko Itaya , Yukio Watanabe , Mariko Suzuki , Genichi Hatakoshi
IPC分类号： H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/162 , H01S5/168 , H01S5/2231 , H01S5/3206 , H01S5/32325
摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

6. 发明授权

US5023880A Semiconductor laser device 失效
公开(公告)号：US5023880A
公开(公告)日：1991-06-11
申请号：US478961
申请日：1990-02-12
申请人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
发明人： Mariko Suzuki , Kazuhiko Itaya , Masayuki Ishikawa , Yukio Watanabe , Genichi Hatakoshi
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01S5/2231 , H01S5/0421 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/321
摘要： A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In.sub.1-w (Ga.sub.1-y Al.sub.y)wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In.sub.1-w (Ga.sub.1-w Al.sub.z).sub.w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In.sub.1-w (Ga.sub.1-s Al.sub.s).sub.w P (0

7. 发明授权

US06873634B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US06873634B2
公开(公告)日：2005-03-29
申请号：US09964463
申请日：2001-09-28
申请人： Masaaki Onomura , Mariko Suzuki , Masayuki Ishikawa
发明人： Masaaki Onomura , Mariko Suzuki , Masayuki Ishikawa
IPC分类号： H01S5/00 , H01S5/02 , H01S5/20 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/0655 , H01S5/2004 , H01S5/34333
摘要： The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.
摘要翻译：本发明提供一种氮化物半导体激光器，通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。一种半导体激光二极管，包括：GaN层; 形成在所述GaN层上并由Al x Ga 1-x N（0.04 <= x <= 0.08）制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区，所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。

8. 发明授权

US5321712A Semiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compound 失效
标题翻译：具有由InGaAlp系化合物构成的包覆层的半导体发光元件
公开(公告)号：US5321712A
公开(公告)日：1994-06-14
申请号：US10844
申请日：1993-01-29
申请人： Kazuhiko Itaya , Koichi Nitta , Genichi Hatakoshi , Yukie Nishikawa , Hideto Sugawara , Mariko Suzuki
发明人： Kazuhiko Itaya , Koichi Nitta , Genichi Hatakoshi , Yukie Nishikawa , Hideto Sugawara , Mariko Suzuki
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01L33/30 , H01S5/32308 , H01S5/223 , H01S5/2231 , H01S5/3086 , H01S5/321 , H01S5/3211 , H01S5/32325
摘要： A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.
摘要翻译：半导体发光元件包括第一导电类型的半导体衬底，形成在半导体衬底上并由第一导电类型的InGaAlP基化合物构成的下包层，形成在下敷层上的有源层，以及由选自GaAs，GaAlAs和InGaAs的材料构成，以及形成在有源层上的上覆层，由第二导电类型的InGaAlP基化合物构成，其中以InGaAlP为基础的化合物被表示通过式Iny（Ga1-xAlx）yP，其中x在0.3至0.7的范围内，y在0.45至0.55的范围内。

9. 发明授权

US5932896A Nitride system semiconductor device with oxygen 失效
标题翻译：氮化物系统半导体器件与氧气
公开(公告)号：US5932896A
公开(公告)日：1999-08-03
申请号：US924834
申请日：1997-09-05
申请人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
发明人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
IPC分类号： H01L29/12 , H01L21/205 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/34 , H01L33/40 , H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/025 , H01S5/32341 , H01S5/34333
摘要： The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0
摘要翻译：本发明提供一种氮化物系半导体器件，其通过提高p型导电层的质量而降低成本并且在生长后不进行热处理而提高生产率，并且通过提高p型导电层的质量而增加寿命和可靠性，以及用于制造氮化物系半导体器件的方法。氮化物系半导体器件具有n型In x Ga y Al z B 1-xy-z N m P n As 1-m n（0≤x，0≤y，0≤z，0≤x+ y + z < 一个p型InxGayAlzB1-xy-zNmPnAs1-mn（0≤x，0≤y≤1,0

10. 发明授权

US06204084B1 Nitride system semiconductor device and method for manufacturing the same 有权
标题翻译：氮化物系半导体器件及其制造方法
公开(公告)号：US06204084B1
公开(公告)日：2001-03-20
申请号：US09247091
申请日：1999-02-09
申请人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
发明人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
IPC分类号： H01L2100
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/025 , H01S5/32341 , H01S5/34333
摘要： The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y 0≦z, 0≦x+y+z≦1, 0
摘要翻译：本发明提供了一种氮化物系半导体器件，其成本降低并且在生长后不进行热处理而提高生产率，并且通过提高p型导电层的质量而增加寿命和可靠性，以及用于制造氮化物系半导体器件的方法。氮化物系半导体器件具有n型In x Ga y Al z B 1-xy-z N m P n As 1-m n（0 <= x，0 <= y 0 <= z，0 <= x + y + z < m，0 <= n，0

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式