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1. 发明申请

US20150137277A1 SEMICONDUCTOR SENSOR CHIPS 审中-公开
公开(公告)号：US20150137277A1
公开(公告)日：2015-05-21
申请号：US14086267
申请日：2013-11-21
申请人： General Electric Company
发明人： Nickolai S. Belov
IPC分类号： G01L9/00 , A61B5/03 , A61M25/00
CPC分类号： G01L9/0054 , A61B5/03 , A61B5/6852 , A61B2562/0247 , A61B2562/12 , A61M2025/0002 , G01L19/148 , H01L2224/48472
摘要： Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.

2. 发明申请

US20150192487A1 LOW PRESSURE SENSORS AND FLOW SENSORS 审中-公开
标题翻译：低压传感器和流量传感器
公开(公告)号：US20150192487A1
公开(公告)日：2015-07-09
申请号：US14150019
申请日：2014-01-08
申请人： General Electric Company
发明人： Nickolai S. Belov , Lihua Li , Kim Vu , Dinh Vu
IPC分类号： G01L9/06 , B81C1/00 , G01L9/00
CPC分类号： B81C1/00158 , B81B3/0072 , B81B2201/0264 , B81B2203/0127 , B81C2201/0133 , G01L9/0044 , G01L9/0047 , G01L19/0092 , G01L19/0618
摘要： Low pressure sensors and flow sensors are provided. In some embodiments, a pressure sensor can include a sensor die that includes a substrate and a cavity that is formed in a bottom side of the substrate and that defines an elastic element including a thin diaphragm area and a rigid island. A maximum thickness of the rigid island can be substantially smaller than a thickness of the substrate and can be greater than a thickness of the thin diaphragm area. Side walls of the rigid island can be substantially parallel to one another and can be substantially perpendicular to top and bottom surfaces of the wafer and substantially perpendicular to top and bottom surfaces of the die. The side walls of the at least one rigid island can be formed by wet etching the cavity into the die. The wafer can have an impurity diffused in one or more portions thereof prior to the wet etching such that the one or more portions are doped.
摘要翻译：提供低压传感器和流量传感器。在一些实施例中，压力传感器可以包括传感器管芯，其包括衬底和形成在衬底的底侧中并且限定包括薄隔膜区域和刚性岛的弹性元件的空腔。刚性岛的最大厚度可以基本上小于衬底的厚度，并且可以大于薄隔膜面积的厚度。刚性岛的侧壁可以基本上彼此平行，并且可以基本上垂直于晶片的顶表面和底表面并且基本垂直于管芯的顶表面和底表面。至少一个刚性岛的侧壁可以通过将腔浸入模具中而形成。在湿蚀刻之前，晶片可以具有在其一个或多个部分中扩散的杂质，使得一个或多个部分被掺杂。

3. 发明申请

US20150137274A1 SEMICONDUCTOR SENSOR CHIPS 有权
标题翻译：半导体传感器芯片
公开(公告)号：US20150137274A1
公开(公告)日：2015-05-21
申请号：US14086259
申请日：2013-11-21
申请人： GENERAL ELECTRIC COMPANY
发明人： Nickolai S. Belov
IPC分类号： H01L23/48 , H01L23/00
CPC分类号： H01L23/481 , G01L9/0054 , G01L19/0076 , G01L19/0092 , H01L24/09 , H01L24/45 , H01L24/49 , H01L2224/45015 , H01L2224/45147 , H01L2224/49 , H01L2924/00014 , H01L2924/01013 , H01L2924/01032 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01322 , H01L2924/12042 , H01L2924/00 , H01L2924/207 , H01L2924/2075 , H01L2924/20757 , H01L2924/20756 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2224/05599
摘要： Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.
摘要翻译：提供半导体传感器芯片。在一些实施例中，半导体传感器芯片可以包括在其一侧上的至少一个引线接合焊盘，在其另一侧上的至少一个接合焊盘，以及在其之间延伸的至少一个穿硅通孔（TSV），并且电连接到芯片对面的接合焊盘。每个接合焊盘可以具有附接到其上的导线。在一些实施例中，半导体传感器芯片可以包括压力传感器，衬底和在从衬底的主体提供p-n结隔离的阱中的电阻器。在一些实施例中，半导体传感器芯片可以包括多个引线接合焊盘，焊盘焊接到每个接合焊盘。每个电线可以焊接，其纵向长度焊接到其相关联的焊盘。

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