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1. 发明申请

US20120111832A1 Template Pillar Formation 有权
标题翻译：模板柱形成
公开(公告)号：US20120111832A1
公开(公告)日：2012-05-10
申请号：US13352824
申请日：2012-01-18
申请人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
发明人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
IPC分类号： B44C1/22 , C23F1/02
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.
摘要翻译：提供了形成压印光刻模板的方法。可以基于层的物理性质以不同的速率蚀刻用于形成压印光刻模板的材料。此外，可以监测材料的反射率以提供材料的基本均匀的侵蚀。

2. 发明申请

US20090200266A1 Template Pillar Formation 审中-公开
标题翻译：模板柱形成
公开(公告)号：US20090200266A1
公开(公告)日：2009-08-13
申请号：US12367661
申请日：2009-02-09
申请人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
发明人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
IPC分类号： G01L21/30
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： Materials for forming an imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.
摘要翻译：可以基于层的物理性质以不同的速率蚀刻用于形成压印光刻模板的材料。此外，可以监测材料的反射率以提供材料的基本均匀的侵蚀。

3. 发明授权

US08512585B2 Template pillar formation 有权
标题翻译：模板柱形成
公开(公告)号：US08512585B2
公开(公告)日：2013-08-20
申请号：US13352824
申请日：2012-01-18
申请人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
发明人： Gary F. Doyle , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Dwayne L. LaBrake
IPC分类号： C23F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/26
摘要： Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.
摘要翻译：提供了形成压印光刻模板的方法。可以基于层的物理性质以不同的速率蚀刻用于形成压印光刻模板的材料。此外，可以监测材料的反射率以提供材料的基本均匀的侵蚀。

4. 发明授权

US07906274B2 Method of creating a template employing a lift-off process 有权
标题翻译：使用剥离过程创建模板的方法
公开(公告)号：US07906274B2
公开(公告)日：2011-03-15
申请号：US11943907
申请日：2007-11-21
申请人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
发明人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
IPC分类号： G03F7/00 , G03F7/09 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.
摘要翻译：一种形成光刻模板的方法，所述方法尤其包括通过在主体上形成导电层并在导电层上形成具有突起和凹陷的图案层，形成多层结构，所述凹陷暴露导电层的部分; 在覆盖图案化层的顶表面和导电层的部分的多层结构上各向异性地沉积硬掩模材料; 通过剥离过程去除图案层，硬掩模材料残留在导电层的部分上; 将抗蚀剂图案定位在所述多层结构上以限定所述多层结构的区域; 并且使用硬掩模材料作为蚀刻掩模选择性地去除与该区域重叠的多层结构的部分。

5. 发明授权

US08980751B2 Methods and systems of material removal and pattern transfer 有权
标题翻译：材料去除和图案转移的方法和系统
公开(公告)号：US08980751B2
公开(公告)日：2015-03-17
申请号：US13014508
申请日：2011-01-26
申请人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
发明人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
IPC分类号： H01L21/311 , H01J37/20 , G03F7/42 , B82Y40/00 , B82Y10/00 , G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/42
摘要： Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
摘要翻译：可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。在这种去除之后，还描述了用于纳米压印的附加蚀刻技术。

6. 发明申请

US20110183521A1 METHODS AND SYSTEMS OF MATERIAL REMOVAL AND PATTERN TRANSFER 有权
标题翻译：材料去除和图案转移的方法和系统
公开(公告)号：US20110183521A1
公开(公告)日：2011-07-28
申请号：US13014508
申请日：2011-01-26
申请人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
发明人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
IPC分类号： H01L21/311 , H01J37/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/42
摘要： Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
摘要翻译：可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。在这种去除之后，还描述了用于纳米压印的另外的蚀刻技术。

7. 发明申请

US20100112310A1 Substrate Patterning 审中-公开
标题翻译：基板图案
公开(公告)号：US20100112310A1
公开(公告)日：2010-05-06
申请号：US12607547
申请日：2009-10-28
申请人： Van Nguyen Truskett , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Benjamin G. Eynon, JR. , Byung-Jin Choi , Kosta S. Selinidis , Sidlgata V. Sreenivasan , Nicholas A. Stacey
发明人： Van Nguyen Truskett , Gerard M. Schmid , Michael N. Miller , Douglas J. Resnick , Benjamin G. Eynon, JR. , Byung-Jin Choi , Kosta S. Selinidis , Sidlgata V. Sreenivasan , Nicholas A. Stacey
IPC分类号： B32B5/16 , B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/708 , G03F9/7084 , Y10T428/24802
摘要： Systems and methods for providing identification patterns on substrates are described.
摘要翻译：描述了在基板上提供识别图案的系统和方法。

8. 发明申请

US20090130598A1 Method of Creating a Template Employing a Lift-Off Process 有权
标题翻译：创建使用脱离过程的模板的方法
公开(公告)号：US20090130598A1
公开(公告)日：2009-05-21
申请号：US11943907
申请日：2007-11-21
申请人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
发明人： Gerard M. Schmid , Douglas J. Resnick , Michael N. Miller
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.
摘要翻译：一种形成光刻模板的方法，所述方法尤其包括通过在主体上形成导电层并在导电层上形成具有突起和凹陷的图案层，形成多层结构，所述凹陷暴露导电层的部分; 在覆盖图案层的顶表面和导电层的部分的多层结构上各向异性地沉积硬掩模材料; 通过剥离过程去除图案层，硬掩模材料残留在导电层的部分上; 将抗蚀剂图案定位在所述多层结构上以限定所述多层结构的区域; 并且使用硬掩模材料作为蚀刻掩模选择性地去除与该区域重叠的多层结构的部分。

9. 发明申请

US20100085555A1 In-Situ Cleaning of an Imprint Lithography Tool 有权
标题翻译：印刷平版印刷工具的原位清洁
公开(公告)号：US20100085555A1
公开(公告)日：2010-04-08
申请号：US12563356
申请日：2009-09-21
申请人： Gerard M. Schmid , Ian Matthew McMackin , Byung-Jin Choi , Douglas J. Resnick
发明人： Gerard M. Schmid , Ian Matthew McMackin , Byung-Jin Choi , Douglas J. Resnick
IPC分类号： G03B27/64 , B08B7/00 , B01J19/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/70925
摘要： Imprint lithography system may provide for an energy source for solidification of material positioned between a template and a substrate. Additionally, the energy source and/or an additional energy source may be used to clean contaminants from the template and/or the substrate.
摘要翻译：压印光刻系统可以提供用于固化位于模板和衬底之间的材料的能量源。此外，能量源和/或附加能量源可用于从模板和/或基底清洁污染物。

10. 发明申请

US20070243655A1 Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features 有权
标题翻译：用于制造包含各种蚀刻特征的印记模板的自对准过程
公开(公告)号：US20070243655A1
公开(公告)日：2007-10-18
申请号：US11693236
申请日：2007-03-29
申请人： Gerard M. Schmid , Nicholas A. Stacey , Douglas J. Resnick , Ronald D. Voisin , Lawrence J. Myron
发明人： Gerard M. Schmid , Nicholas A. Stacey , Douglas J. Resnick , Ronald D. Voisin , Lawrence J. Myron
IPC分类号： H01L21/467
CPC分类号： G03F7/0005 , B82Y10/00 , B82Y40/00 , G02B3/0012 , G03F7/0002
摘要： A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing “higher” structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.
摘要翻译：能够在多个独立蚀刻步骤中产生的结构共面化的工艺。通过仅选择性地将某些图案暴露于特定的蚀刻条件来独立地执行各种蚀刻。在这些结构已被创建之后，可能各种结构将相对于模板表面存在于不同的平面/高度处。可以通过选择性地将“较高”结构暴露于各向异性蚀刻来独立地调节各种结构的高度，从而降低结构的整体高度，同时保留结构形貌。

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