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1. 发明授权

US5024896A Collimated metal deposition 失效
标题翻译：准直金属沉积
公开(公告)号：US5024896A
公开(公告)日：1991-06-18
申请号：US350182
申请日：1989-07-06
申请人： Gangadhara S. Mathad , David Stanasolovich , Giorgio G. Via
发明人： Gangadhara S. Mathad , David Stanasolovich , Giorgio G. Via
IPC分类号： H01L21/3205 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/7688 , Y10S428/901 , Y10T428/12396 , Y10T428/12528 , Y10T428/31721
摘要： A process and structure for depositing metal lines in a lift-off process is disclosed. The process comprises the deposition of a four-layer structure or lift-off stencil, comprising a first layer of a lift-off polymer etchable in oxygen plasma, a first barrier layer of hexamethyldisilizane (HMDS) resistant to an oxygen plasma, a second lift-off layer and a second barrier layer. Once these layers are deposited, a layer of photoresist is deposited and lithographically defined with the metal conductor pattern desired. The layers are then sequentially etched with oxygen and CF.sub.4, resulting in a dual overhang lift-off structure. Metal is then deposited by evaporation or sputtering through the lift-off structure. Following metal deposition, the stencil is lifted-off in a solvent such as N-methylpyrrolidone (NMP).
摘要翻译：公开了一种用于在剥离过程中沉积金属线的工艺和结构。该方法包括沉积四层结构或剥离模板，其包括在氧等离子体中可蚀刻的剥离聚合物的第一层，对氧等离子体有抗性的六甲基二硅烷（HMDS）的第一阻挡层，第二提升和第二阻挡层。一旦沉积这些层，就会沉积一层光致抗蚀剂，并用所需的金属导体图案光刻地限定。然后用氧和CF 4顺序蚀刻各层，得到双悬臂剥离结构。然后通过蒸发或溅射将金属沉积通过剥离结构。金属沉积后，在溶剂如N-甲基吡咯烷酮（NMP）中将模板剥离。

2. 发明授权

US5258264A Process of forming a dual overhang collimated lift-off stencil with subsequent metal deposition 失效
标题翻译：在随后的金属沉积中形成双悬垂准直剥离模板的工艺
公开(公告)号：US5258264A
公开(公告)日：1993-11-02
申请号：US926659
申请日：1992-08-06
申请人： Gangadhara S. Mathad , David Stanasolovich , Giorgio G. Via
发明人： Gangadhara S. Mathad , David Stanasolovich , Giorgio G. Via
IPC分类号： H01L21/311 , H01L21/768 , G03F7/36 , G03F7/42
CPC分类号： H01L21/7688 , H01L21/31116
摘要： A process and structure for depositing metal lines in a lift-off process is disclosed. The process comprises the deposition of a four-layer structure or lift-off stencil, comprising a first layer of a lift-off polymer etchable in oxygen plasma, a first barrier layer of hexamethyldisilizane (HMDS) resistant to an oxygenplasma, a second lift-off layer and a second barrier layer. Once these layers are deposited, a layer of photoresist is deposited and lithographically defined with the metal conductor pattern desired. The layers are then sequentially etched with oxygen and CF.sub.4, resulting in a dual overhang lift-off structure. Metal is then deposited by evaporation or sputtering through the lift-off structure. Following metal deposition, the stencil is lifted-off in a solvent such as N-methylpyrroldone (NMP).
摘要翻译：公开了一种用于在剥离过程中沉积金属线的工艺和结构。该方法包括沉积四层结构或剥离模板，其包括可在氧等离子体中蚀刻的剥离聚合物的第一层，耐氧气等级的六甲基二硅烷（HMDS）的第一阻挡层，第二提升 - 剥离层和第二阻挡层。一旦沉积这些层，就会沉积一层光致抗蚀剂，并用所需的金属导体图案光刻地限定。然后用氧和CF 4顺序蚀刻各层，得到双悬臂剥离结构。然后通过蒸发或溅射将金属沉积通过剥离结构。在金属沉积之后，在诸如N-甲基吡咯酮（NMP）的溶剂中将模板剥离。

3. 发明授权

US5087537A Lithography imaging tool and related photolithographic processes 失效
标题翻译： LITHOGRAPHY成像工具和相关的光刻工艺
公开(公告)号：US5087537A
公开(公告)日：1992-02-11
申请号：US419860
申请日：1989-10-11
申请人： John F. Conway , Edward C. Fredericks , Giorgio G. Via
发明人： John F. Conway , Edward C. Fredericks , Giorgio G. Via
IPC分类号： G03F1/00 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/44 , G03F7/70591 , G03F7/70625 , G03F7/70633 , G03F7/70641 , H01J37/3174 , H01J2237/30433 , H01J2237/31755
摘要： An apparatus and method for characterizing lithography imaging to quickly optimize a lithography process is described. The apparatus consists of two lithography masks for use with an optical stepper, ion-beam or x-ray lithography tool. The first mask is used for creating topography on the wafer substrate, and is patterned with groups of large elements arranged in orthogonal and angular directions. The second mask is used for defining a periodic pattern over the large elements. Preferably, the periodic pattern is in the same order of dimension as the critical element on the integrated circuit. A method is provided for characterizing lithography tools which do not have lithography masks such as an electron beam exposure tool.

4. 发明授权

US4567132A Multi-level resist image reversal lithography process 失效
标题翻译：多层抗蚀剂图像反转光刻工艺
公开(公告)号：US4567132A
公开(公告)日：1986-01-28
申请号：US590092
申请日：1984-03-16
申请人： Edward C. Fredericks , Herbert L. Greenhaus , Madan M. Nanda , Giorgio G. Via
发明人： Edward C. Fredericks , Herbert L. Greenhaus , Madan M. Nanda , Giorgio G. Via
IPC分类号： G03F7/095 , G03F7/20 , G03F7/26 , H01L21/027
CPC分类号： H01L21/0272 , G03F7/095
摘要： A photoresist photolithographic process is disclosed which provides for a single development step to develop a dual layer photoresist for lift-off, reactive ion etching, or ion implantation processes requiring a precise aperture size at the top of the photoresist layer.The process involves the deposition of two compositionally similar layers, with the first layer having the characteristic of being soluble in a developer after exposure to light and baking, and the second layer having the characteristic of being insoluble in the same developer after having been exposed to light and baked. With these two distinct characteristics for the two layers of photoresist, the effective aperture for windows in the composite photoresist can be tightly controlled in its cross-sectional dimension in the face of large variations in the developer concentration and development time.
摘要翻译：公开了一种光致抗蚀剂光刻工艺，其提供单一显影步骤以开发用于剥离，反应离子蚀刻或离子注入工艺的双层光致抗蚀剂，其需要在光致抗蚀剂层的顶部具有精确的孔径尺寸。该方法涉及沉积两个组成相似的层，其中第一层具有在暴露于光和烘烤之后可溶于显影剂的特征，并且第二层具有在暴露于光和烤。对于两层光致抗蚀剂具有这两个不同的特征，在显影剂浓度和显影时间的巨大变化的情况下，复合光致抗蚀剂中的窗口的有效孔径可以在其横截面尺寸上被严格控制。

5. 发明授权

US4745045A Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid 失效
标题翻译：通过使用由正性光致抗蚀剂和聚酰胺酸形成的热加工的聚酰亚胺底层，提高使用光致抗蚀剂覆盖层的微电子电路中的分辨率的方法
公开(公告)号：US4745045A
公开(公告)日：1988-05-17
申请号：US928746
申请日：1986-11-10
申请人： Edward C. Fredericks , Giorgio G. Via
发明人： Edward C. Fredericks , Giorgio G. Via
IPC分类号： G03F7/09 , H01L21/027 , H01L21/312 , H01L21/768 , G03F7/20 , H01L21/283
CPC分类号： H01L21/0274 , G03F7/094 , H01L21/0276 , H01L21/312 , H01L21/7688
摘要： A method which provides for a permanent planarization layer on a multilayer integrated circuit. The planarization layer resides above other circuit layers which reflect incident light. A layer of photoresist is formed over the planarization layers and imaged through a mask with circuit defining structure. During exposure of the photoresist, incident light passes through the planarization layer. Scattering from the boundary of the planarization layer and photoresist is minimized because the index of refraction of the planarization layer is substantially equal to the index of refraction of the photoresist. Light reflected from the underlaying layers is substantially absorbed by the planarization layer. Reduction of the reflected and scattered light results in improved resolution of developed images in photoresist. The developed images, when further processed into interconnecting conductors have improved definition, avoiding the additional process steps of applying a temporary dye or other light impervious layer.
摘要翻译：一种在多层集成电路上提供永久平坦化层的方法。平坦化层位于反射入射光的其他电路层之上。在平坦化层上形成一层光致抗蚀剂，并通过具有电路限定结构的掩模进行成像。在光致抗蚀剂曝光期间，入射光通过平坦化层。由于平坦化层的折射率基本上等于光致抗蚀剂的折射率，从平坦化层和光致抗蚀剂的边界散射最小化。从底层反射的光被平坦化层基本上吸收。反射和散射光的减少导致光致抗蚀剂中显影图像的分辨率提高。当进一步处理成互连导体时，显影的图像具有改进的定义，避免施加临时染料或其它不透光层的附加工艺步骤。

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