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    • 7. 发明申请
    • MOTFT WITH UN-PATTERNED ETCH-STOP
    • 具有不间断蚀刻的MOTFT
    • US20150137113A1
    • 2015-05-21
    • US14081130
    • 2013-11-15
    • Gang YuChan-Long ShiehJuergen MusolfFatt FoongTian Xiao
    • Gang YuChan-Long ShiehJuergen MusolfFatt FoongTian Xiao
    • H01L29/786H01L29/24H01L21/02H01L29/66
    • H01L27/1203H01L21/02565H01L21/02664H01L29/24H01L29/66969H01L29/7869
    • A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
    • 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法,包括以下步骤:沉积半导体金属氧化物材料层,在MO材料层上沉积蚀刻停止材料的覆盖层,以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电,以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。 蚀刻停止材料也是化学稳固的,以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。
    • 9. 发明申请
    • MOTFT WITH UN-PATTERNED ETCH-STOP
    • 具有不间断蚀刻的MOTFT
    • US20170069662A1
    • 2017-03-09
    • US15173481
    • 2016-06-03
    • Gang YuChan-Long ShiehJuergen MusolfFatt FoongTian Xiao
    • Gang YuChan-Long ShiehJuergen MusolfFatt FoongTian Xiao
    • H01L27/12H01L21/02H01L29/66H01L29/786
    • H01L27/1203H01L21/02565H01L21/02664H01L29/24H01L29/66969H01L29/7869
    • A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
    • 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法,包括以下步骤:沉积半导体金属氧化物材料层,在MO材料层上沉积蚀刻停止材料的覆盖层,以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电,以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。 蚀刻停止材料也是化学稳固的,以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。
    • 10. 发明授权
    • High mobility stabile metal oxide TFT
    • 高迁移率稳定金属氧化物TFT
    • US09379247B2
    • 2016-06-28
    • US13536641
    • 2012-06-28
    • Chan-Long ShiehGang YuFatt FoongTian XiaoJuergen Musolf
    • Chan-Long ShiehGang YuFatt FoongTian XiaoJuergen Musolf
    • H01L29/10H01L29/786
    • H01L29/7869H01L21/467H01L21/4763H01L23/535H01L29/0649H01L29/41733H01L29/66969H01L29/78696
    • A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.
    • 一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤:提供衬底,将栅极定位在衬底上,以及在栅极上沉积栅极电介质层,并且将衬底部分未被栅极覆盖。 包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上,钝化膜位于与半导体膜的重叠关系中。 蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。 在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触,并且金属源极/漏极触点位于多个膜有源层的修改部分上。