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1. 发明授权

US09768322B2 Metal oxide TFT with improved source/drain contacts and reliability 有权
公开(公告)号：US09768322B2
公开(公告)日：2017-09-19
申请号：US15225592
申请日：2016-08-01
申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
发明人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
IPC分类号： H01L29/786 , H01L29/49 , H01L29/66 , H01L23/00 , H01L21/8234 , H01L21/4763 , H01L21/324 , H01L21/321 , H01L21/383 , H01L21/477 , H01L21/428 , H01L29/45 , H01L21/44 , H01L23/31
CPC分类号： H01L29/7869 , H01L21/321 , H01L21/324 , H01L21/383 , H01L21/428 , H01L21/44 , H01L21/47635 , H01L21/477 , H01L21/823418 , H01L23/3171 , H01L23/564 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

2. 发明申请

US20150357480A1 STABLE METAL-OXIDE THIN FILM TRANSISTOR AND METHOD OF MAKING 审中-公开
标题翻译：稳定的金属氧化物薄膜晶体管及其制备方法
公开(公告)号：US20150357480A1
公开(公告)日：2015-12-10
申请号：US14829812
申请日：2015-08-19
申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong , Juergen Musulf , Karl Birger Kristoffer Ottosson
发明人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong , Juergen Musulf , Karl Birger Kristoffer Ottosson
IPC分类号： H01L29/786 , H01L21/28 , H01L29/49 , H01L29/66 , H01L29/417 , H01L29/423 , H01L21/283 , H01L21/324
CPC分类号： H01L29/78693 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/324 , H01L29/42364 , H01L29/7869 , H01L51/052
摘要： A thin film semiconductor device has a semiconductor layer including a composite/blend/mixture of an amorphous/nanocrystalline semiconductor ionic metal oxide and an amorphous/nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
摘要翻译：薄膜半导体器件具有包括非晶/纳米晶体半导体离子金属氧化物和非晶/纳米晶体非半导体共价金属氧化物的复合/共混物/混合物的半导体层。一对端子定位成与半导体层连通并且限定半导体通道，并且玛瑙端子被定位成与半导体沟道连通并进一步定位成控制沟道的传导。本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。

3. 发明申请

US20140001462A1 HIGH MOBILITY STABILE METAL OXIDE TFT 有权
标题翻译：高移动性稳定的金属氧化物薄膜
公开(公告)号：US20140001462A1
公开(公告)日：2014-01-02
申请号：US13536641
申请日：2012-06-28
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L21/467 , H01L21/4763 , H01L23/535 , H01L29/0649 , H01L29/41733 , H01L29/66969 , H01L29/78696
摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.
摘要翻译：一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

4. 发明申请

US20170033227A1 METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY 有权
标题翻译：具有改进的源/漏联系和可靠性的金属氧化物薄膜
公开(公告)号：US20170033227A1
公开(公告)日：2017-02-02
申请号：US15225592
申请日：2016-08-01
申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
发明人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
IPC分类号： H01L29/786 , H01L23/00 , H01L23/31 , H01L29/49
CPC分类号： H01L29/7869 , H01L21/321 , H01L21/324 , H01L21/383 , H01L21/428 , H01L21/44 , H01L21/47635 , H01L21/477 , H01L21/823418 , H01L23/3171 , H01L23/564 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.
摘要翻译：一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触，并将阈值电压调节到期望的水平。在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

5. 发明授权

US09412623B2 Metal oxide TFT with improved source/drain contacts and reliability 有权
标题翻译：金属氧化物TFT具有改善的源极/漏极触点和可靠性
公开(公告)号：US09412623B2
公开(公告)日：2016-08-09
申请号：US14833462
申请日：2015-08-24
申请人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
发明人： Gang Yu , Chan-Long Shieh , Tian Xiao , Fatt Foong
IPC分类号： H01L21/383 , H01L29/786 , H01L29/49 , H01L29/66 , H01L23/00 , H01L21/8234 , H01L21/4763 , H01L21/324 , H01L21/321 , H01L21/477 , H01L21/428 , H01L29/45
CPC分类号： H01L29/7869 , H01L21/321 , H01L21/324 , H01L21/383 , H01L21/428 , H01L21/44 , H01L21/47635 , H01L21/477 , H01L21/823418 , H01L23/3171 , H01L23/564 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.
摘要翻译：一种方法，包括提供具有栅极的衬底，与栅极相邻的栅极绝缘体材料层和位于与栅极相对的栅极绝缘体上的金属氧化物半导体材料层，形成选择性图案化的蚀刻停止钝化层并在高温下加热在含氧或含氮或惰性气氛中选择性地增加未被蚀刻停止层覆盖的金属氧化物半导体的区域中的载流子浓度，其上形成有上层和间隔开的源极/漏极金属。随后在含氧或含氮或惰性气氛中加热晶体管，以进一步改善源极/漏极接触并将阈值电压调节到所需的电平。在晶体管的顶部提供额外的钝化层，具有电气绝缘和对周围环境中的潮湿和化学物质的阻隔性能。

6. 发明授权

US09773918B2 Metal oxide TFT with improved stability and mobility 有权
公开(公告)号：US09773918B2
公开(公告)日：2017-09-26
申请号：US14753460
申请日：2015-06-29
申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
发明人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
IPC分类号： H01L29/786 , H01L21/02 , H01L23/31 , H01L23/29 , H01L29/66 , H01L29/423
CPC分类号： H01L29/7869 , H01L21/02266 , H01L21/02269 , H01L21/02271 , H01L21/0228 , H01L21/02282 , H01L21/02565 , H01L23/291 , H01L23/3171 , H01L29/42356 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.

7. 发明申请

US20150137113A1 MOTFT WITH UN-PATTERNED ETCH-STOP 有权
标题翻译：具有不间断蚀刻的MOTFT
公开(公告)号：US20150137113A1
公开(公告)日：2015-05-21
申请号：US14081130
申请日：2013-11-15
申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
发明人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
IPC分类号： H01L29/786 , H01L29/24 , H01L21/02 , H01L29/66
CPC分类号： H01L27/1203 , H01L21/02565 , H01L21/02664 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
摘要翻译：一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

8. 发明授权

US10109647B2 MOTFT with un-patterned etch-stop 有权
公开(公告)号：US10109647B2
公开(公告)日：2018-10-23
申请号：US15173481
申请日：2016-06-03
申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
发明人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
IPC分类号： H01L29/10 , H01L27/12 , H01L21/02 , H01L29/24 , H01L29/66 , H01L29/786
摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

9. 发明申请

US20170069662A1 MOTFT WITH UN-PATTERNED ETCH-STOP 审中-公开
标题翻译：具有不间断蚀刻的MOTFT
公开(公告)号：US20170069662A1
公开(公告)日：2017-03-09
申请号：US15173481
申请日：2016-06-03
申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
发明人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
IPC分类号： H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1203 , H01L21/02565 , H01L21/02664 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
摘要翻译：一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以在源极/漏极端子和半导体金属氧化物材料层之间提供电接触。蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

10. 发明授权

US09379247B2 High mobility stabile metal oxide TFT 有权
标题翻译：高迁移率稳定金属氧化物TFT
公开(公告)号：US09379247B2
公开(公告)日：2016-06-28
申请号：US13536641
申请日：2012-06-28
申请人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
发明人： Chan-Long Shieh , Gang Yu , Fatt Foong , Tian Xiao , Juergen Musolf
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/467 , H01L21/4763 , H01L23/535 , H01L29/0649 , H01L29/41733 , H01L29/66969 , H01L29/78696
摘要： A method of fabricating a stable, high mobility metal oxide thin film transistor includes the steps of providing a substrate, positioning a gate on the substrate, and depositing a gate dielectric layer on the gate and portions of the substrate not covered by the gate. A multiple film active layer including a metal oxide semiconductor film and a metal oxide passivation film is deposited on the gate dielectric with the passivation film positioned in overlying relationship to the semiconductor film. An etch-stop layer is positioned on a surface of the passivation film and defines a channel area in the active layer. A portion of the multiple film active layer on opposite sides of the etch-stop layer is modified to form an ohmic contact and metal source/drain contacts are positioned on the modified portion of the multiple film active layer.
摘要翻译：一种制造稳定的高迁移率金属氧化物薄膜晶体管的方法包括以下步骤：提供衬底，将栅极定位在衬底上，以及在栅极上沉积栅极电介质层，并且将衬底部分未被栅极覆盖。包括金属氧化物半导体膜和金属氧化物钝化膜的多层膜活性层沉积在栅极电介质上，钝化膜位于与半导体膜的重叠关系中。蚀刻停止层位于钝化膜的表面上并限定有源层中的沟道区。在蚀刻停止层的相对侧上的多个膜有源层的一部分被修改以形成欧姆接触，并且金属源极/漏极触点位于多个膜有源层的修改部分上。

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