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1. 发明授权

US08946795B2 Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter 有权
标题翻译：背面照明（BSI）图像传感器，减少了闪光和电快门
公开(公告)号：US08946795B2
公开(公告)日：2015-02-03
申请号：US13050285
申请日：2011-03-17
申请人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14689
摘要： Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要翻译：包括在基板的表面形成的感光区域和形成在与光敏区域一定距离的基板的表面中的溢流漏极的像素的实施例，溢流漏极的电偏压是可变的和可控的。包括形成在基板的表面中的感光区域的像素的实施例，耦合到感光区域的源极跟随器晶体管，包括漏极的源极跟随器晶体管以及将光敏区域耦合到源极的漏极的掺杂桥更低的晶体管。

2. 发明申请

US20120235212A1 BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH REDUCED BLOOMING AND ELECTRICAL SHUTTER 有权
标题翻译：背光照明（BSI）图像传感器，具有降低成色和电动快门
公开(公告)号：US20120235212A1
公开(公告)日：2012-09-20
申请号：US13050285
申请日：2011-03-17
申请人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai , Yin Qian , Vincent Venezia , Rongsheng Yang , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/112 , H01L31/101
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14689
摘要： Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要翻译：包括在基板的表面形成的感光区域和形成在与光敏区域一定距离的基板的表面中的溢流漏极的像素的实施例，溢流漏极的电偏压是可变的和可控的。包括形成在基板的表面中的感光区域的像素的实施例，耦合到感光区域的源极跟随器晶体管，包括漏极的源极跟随器晶体管以及将光敏区域耦合到源极的漏极的掺杂桥更低的晶体管。

3. 发明申请

US20130092982A1 PARTIAL BURIED CHANNEL TRANSFER DEVICE FOR IMAGE SENSORS 有权
标题翻译：用于图像传感器的部分通道传输设备
公开(公告)号：US20130092982A1
公开(公告)日：2013-04-18
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/18 , H01L31/101
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
摘要翻译：包括感光元件，浮动扩散区域和转印装置的图像传感器像素的实施例。感光元件设置在基板层中，用于响应于光积累图像电荷。浮动扩散区域设置在衬底层中以从感光元件接收图像电荷。转移装置设置在感光元件和浮动扩散区域之间以选择性地将图像电荷从感光元件转移到浮动扩散区域。传输装置包括掩埋沟道器件，其包括设置在掩埋沟道掺杂区域上的掩埋沟道栅极。转移装置还包括表面通道装置，其包括设置在表面通道区域上的表面通道门。表面通道装置与掩埋通道装置串联。表面沟道栅极具有与掩埋沟道栅极相反的极性。

4. 发明授权

US09698185B2 Partial buried channel transfer device for image sensors 有权
公开(公告)号：US09698185B2
公开(公告)日：2017-07-04
申请号：US13273026
申请日：2011-10-13
申请人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
发明人： Gang Chen , Sing-Chung Hu , Hsin-Chih Tai , Duli Mao , Manoj Bikumandla , Wei Zheng , Yin Qian , Zhibin Xiong , Vincent Venezia , Keh-Chiang Ku , Howard E. Rhodes
IPC分类号： H01L27/148 , H01L31/062 , H01L31/101 , H01L31/113 , H01L27/146
CPC分类号： H01L27/14616 , H01L27/14689
摘要： Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

5. 发明申请

US20140048897A1 PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER 审中-公开
标题翻译： PIXEL带负电荷的浅层隔离（STI）衬垫
公开(公告)号：US20140048897A1
公开(公告)日：2014-02-20
申请号：US13587811
申请日：2012-08-16
申请人： Yin Qian , Hsin-Chih Tai , Gang Chen , Duli Mao , Vincent Venezia , Howard E. Rhodes
发明人： Yin Qian , Hsin-Chih Tai , Gang Chen , Duli Mao , Vincent Venezia , Howard E. Rhodes
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L27/1463 , H01L27/14689
摘要： Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.
摘要翻译：包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。在与感光区域相邻的基板的前表面中形成隔离沟槽。隔离沟槽包括具有底部和侧壁的沟槽，形成在底部和侧壁上的钝化层，以及用于填充未被钝化层填充的沟槽部分的填料。

6. 发明申请

US20130207212A1 LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 有权
标题翻译：背光照明成像传感器中的侧光
公开(公告)号：US20130207212A1
公开(公告)日：2013-08-15
申请号：US13370085
申请日：2012-02-09
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L27/1462 , H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要翻译：背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。半导体层具有前表面和背面。半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。像素阵列被定位成接收穿过半导体层的背面的外部入射光。半导体层还包括设置在传感器阵列区域外侧的半导体层的外围电路区域中的发光元件。沟槽设置在光感测元件和发光元件之间的半导体层中。当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

7. 发明授权

US08772898B2 Lateral light shield in backside illuminated imaging sensors 有权
标题翻译：背面照明成像传感器的侧面防护罩
公开(公告)号：US08772898B2
公开(公告)日：2014-07-08
申请号：US13370085
申请日：2012-02-09
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Yin Qian , Gang Chen , Howard E. Rhodes
IPC分类号： H01L31/0216
CPC分类号： H01L27/1462 , H01L27/14623 , H01L27/1464 , H01L27/14685
摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要翻译：背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。半导体层具有前表面和背面。半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。像素阵列被定位成接收穿过半导体层的背面的外部入射光。半导体层还包括设置在传感器阵列区域外部的半导体层的外围电路区域中的发光元件。沟槽设置在光感测元件和发光元件之间的半导体层中。当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

8. 发明申请

US20120319242A1 Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors 审中-公开
标题翻译：用于在图像传感器中形成掺杂隔离区域的掺杂剂植入硬掩模
公开(公告)号：US20120319242A1
公开(公告)日：2012-12-20
申请号：US13164563
申请日：2011-06-20
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Keh-Chiang Ku , Yin Qian , Gang Chen , Rongsheng Yang , Howard Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Keh-Chiang Ku , Yin Qian , Gang Chen , Rongsheng Yang , Howard Rhodes
IPC分类号： H01L29/02 , H01L31/02
CPC分类号： H01L21/26513 , H01L21/76237 , H01L27/1463 , H01L27/14689
摘要： Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the doped isolation region. An opening is etched in the hardmask layer by exposing the hardmask layer to one or more etchants through the opening. The opening in the hardmask layer may have a width of less than 0.4 micrometers. The doped isolation region may be formed in the substrate beneath the opening in the hardmask layer by performing a dopant implantation that introduces dopant through the opening in the hardmask layer. The method of an aspect may include forming sidewall spacers on sidewalls of the opening in the hardmask layer and using the sidewall spacers as a dopant implantation mask.
摘要翻译：在图像传感器的制造期间在衬底中形成掺杂的隔离区域。一种方面的方法包括在衬底上形成硬掩模层，以及在硬掩模层上形成光致抗蚀剂层。在掺杂隔离区域的预定位置上的光致抗蚀剂层中形成开口。通过将硬掩模层暴露于通过开口的一个或多个蚀刻剂，在硬掩模层中蚀刻开口。硬掩模层中的开口可以具有小于0.4微米的宽度。可以通过执行通过硬掩模层中的开口引入掺杂剂的掺杂剂注入，在硬掩模层中的开口下方的衬底中形成掺杂隔离区。一方面的方法可以包括在硬掩模层中的开口的侧壁上形成侧壁间隔物，并且使用侧壁间隔物作为掺杂剂注入掩模。

9. 发明授权

US08643132B2 In-pixel high dynamic range imaging 有权
标题翻译：像素高动态范围成像
公开(公告)号：US08643132B2
公开(公告)日：2014-02-04
申请号：US13155969
申请日：2011-06-08
申请人： Gang Chen , Duli Mao , Hsin-Chih Tai , Howard E. Rhodes
发明人： Gang Chen , Duli Mao , Hsin-Chih Tai , Howard E. Rhodes
IPC分类号： H01L31/06 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14616 , H01L27/14612 , H01L27/14643
摘要： Embodiments of the invention describe providing high dynamic range imaging (HDRI or simply HDR) to an imaging pixel by coupling a floating diffusion node of the imaging pixel to a plurality of metal-oxide semiconductor (MOS) capacitance regions. It is understood that a MOS capacitance region only turns “on” (i.e., changes the overall capacitance of the floating diffusion node) when the voltage at the floating diffusion node (or a voltage difference between a gate node and the floating diffusion node) is greater than its threshold voltage; before the MOS capacitance region is “on” it does not contribute to the overall capacitance or conversion gain of the floating diffusion node.Each of the MOS capacitance regions will have different threshold voltages, thereby turning “on” at different illumination conditions. This increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system.
摘要翻译：本发明的实施例描述了通过将成像像素的浮动扩散节点耦合到多个金属氧化物半导体（MOS）电容区域来向成像像素提供高动态范围成像（HDRI或简单的HDR）。可以理解，当浮动扩散节点处的电压（或者栅极节点和浮动扩散节点之间的电压差）为（...）时，MOS电容区域只会变为“导通”（即，改变浮动扩散节点的整体电容）大于其阈值电压; 在MOS电容区域“接通”之前，它不会对浮动扩散节点的整体电容或转换增益有贡献。每个MOS电容区域将具有不同的阈值电压，从而在不同的照明条件下“打开”。这增加了成像像素的动态范围，从而为主机成像系统提供HDR。

10. 发明申请

US20130082163A1 IMAGE SENSOR WITH MICRO-LENS COATING 有权
标题翻译：具有微透镜涂层的图像传感器
公开(公告)号：US20130082163A1
公开(公告)日：2013-04-04
申请号：US13252883
申请日：2011-10-04
申请人： Gang Chen , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
发明人： Gang Chen , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
IPC分类号： H01L27/148 , B23P25/00
CPC分类号： H01L27/14627 , H01L27/14685 , Y10T29/49885
摘要： Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal to, a profile of the micro-lens. In another embodiment, the coating portion is formed at least in part by orienting the surface of the micro-lens to face generally downward with the direction of gravity, the orienting to allow a fluid coating material to flow for formation of the coating portion.
摘要翻译：用于为像素阵列的一个或多个微透镜提供涂层的技术和架构。在一个实施例中，像素元件包括微透镜和在微透镜的表面上延伸的涂层部分，其中涂层部分的轮廓与微观透镜的轮廓超共形或至少共形 -镜片。在另一个实施例中，涂覆部分至少部分地通过使微透镜的表面定向以与重力方向大致向下的方式形成，定向以允许流体涂覆材料流动以形成涂覆部分。

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