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1. 发明申请

US20160033976A1 STORAGE DEVICE, OPERATION METHOD OF STORAGE DEVICE AND METHOD OF ACCESSING STORAGE DEVICE 有权
标题翻译：存储装置，存储装置的操作方法和存取装置的访问方法
公开(公告)号：US20160033976A1
公开(公告)日：2016-02-04
申请号：US14638012
申请日：2015-03-04
申请人： GOEUN JUNG , KYUNGRYUN KIM , SANGYONG YOON , SEUNG-CHEOL HAN
发明人： GOEUN JUNG , KYUNGRYUN KIM , SANGYONG YOON , SEUNG-CHEOL HAN
IPC分类号： G05D23/19 , G05B15/02 , G06F3/06
CPC分类号： G05B15/02 , G11C7/04 , G11C16/0483 , G11C16/26 , G11C16/32
摘要： A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.
摘要翻译：操作存储装置的方法包括非易失性存储装置，被配置为控制非易失性存储装置的控制器和配置成测量非易失性存储装置的温度的温度传感器。该方法包括计算一段时间内由温度传感器测量的感测温度的平均感测温度，并且基于平均感测温度周期性地计算数据在非易失性存储器件中被编程之后的经过时间。

2. 发明申请

US20160004437A1 STORAGE DEVICE AND READ METHODS THEREOF 有权
标题翻译：存储器件及其读取方法
公开(公告)号：US20160004437A1
公开(公告)日：2016-01-07
申请号：US14736484
申请日：2015-06-11
申请人： YOON KIM , KYEHYUN KYUNG , KYUNGRYUN KIM , SANGYONG YOON
发明人： YOON KIM , KYEHYUN KYUNG , KYUNGRYUN KIM , SANGYONG YOON
IPC分类号： G06F3/06 , G11C16/04 , G11C16/26 , G11C16/32 , G06F11/10 , G11C29/52
CPC分类号： G06F3/061 , G06F3/0619 , G06F3/0653 , G06F3/0659 , G06F3/0679 , G06F11/1048 , G11C16/0483 , G11C16/26 , G11C16/32 , G11C29/021 , G11C29/023 , G11C29/028 , G11C29/52
摘要： A read method of a storage device includes performing a first read operation on a nonvolatile memory device based on a time stamp table storing a program time and a time-read level look-up table indicating a read level shift due to a program lapsed time. A determination is made whether to adjust the time-read level look-up table based on a result of the first read operation. As a consequence of determining to adjust the time-read level look-up table, adjusting the time-read level look-up table through a valley search operation and performing a second read operation on the nonvolatile memory device based on the time stamp table and the adjusted time-read level look-up table.
摘要翻译：存储装置的读取方法包括：基于存储程序时间的时间戳表和指示由于程序经过时间引起的读取电平移位的时间读取级别查找表，对非易失性存储器件执行第一读取操作。确定是否基于第一读取操作的结果来调整时间读取级别查找表。作为确定调整时间读取级别查找表的结果，通过谷值搜索操作来调整时间读取级别查找表，并且基于时间戳表对非易失性存储器设备执行第二读取操作，以及调整后的时间读取级别查找表。

3. 发明申请

US20140185377A1 MULTI-LEVEL CELL MEMORY DEVICE AND METHOD OF OPERATING MULTI-LEVEL CELL MEMORY DEVICE 有权
标题翻译：多级单元存储器件和操作多级存储器件的方法
公开(公告)号：US20140185377A1
公开(公告)日：2014-07-03
申请号：US14135734
申请日：2013-12-20
申请人： KYUNGRYUN KIM , SANGYONG YOON
发明人： KYUNGRYUN KIM , SANGYONG YOON
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , H01L27/11582 , H01L29/7926
摘要： A read method of a multi-level cell memory device includes receiving a first read command, and reading first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being higher than the first hard decision read voltage. The method further includes selecting one of the first and second hard decision read voltages, reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages having voltage levels which are different from that of the selected one of the first and second hard decision read voltages, and providing the first soft decision data to a memory controller for first error correction code (ECC) decoding.
摘要翻译：多级单元存储器件的读取方法包括接收第一读取命令，以及通过使用第一硬判决读取电压和第二硬判决读取电压执行第一和第二硬判决读取操作来读取第一和第二硬判决数据，第二硬判决读取电压分别高于第一硬判决读电压。该方法还包括选择第一和第二硬判决读取电压中的一个，通过使用多个软判决读取电压执行第一软判决读取操作来读取第一软判决数据，所述软判决读取电压具有不同于所选择的一个第一和第二硬判定读取电压，并且向存储器控制器提供第一软判决数据用于第一纠错码（ECC）解码。

4. 发明申请

US20150332772A1 NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND MEMORY CONTROLLER AND OPERATING METHOD OF MEMORY CONTROLLER 有权
标题翻译：非易失性存储器系统，包括非易失性存储器件和存储器控制器以及存储器控制器的操作方法
公开(公告)号：US20150332772A1
公开(公告)日：2015-11-19
申请号：US14668072
申请日：2015-03-25
申请人： KYUNGRYUN KIM , SANGYONG YOON , KIWHAN SONG
发明人： KYUNGRYUN KIM , SANGYONG YOON , KIWHAN SONG
IPC分类号： G11C16/10 , G11C16/34 , G11C16/32
CPC分类号： G11C16/28 , G06F3/0604 , G06F3/0629 , G06F3/0679 , G11C7/227 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/10 , G11C16/30 , G11C16/32 , G11C16/3459 , G11C2211/5621
摘要： A nonvolatile memory system includes a nonvolatile memory device including a plurality of memory cells, and a memory controller. The memory controller is configured to count a clock to generate a current time, program dummy data at predetermined memory cells among the plurality of memory cells at a power-off state, detect a charge loss of the predetermined memory cells when a power-on state occurs after the power-off state, and restore the current time based on the detected charge loss.
摘要翻译：非易失性存储器系统包括包括多个存储单元的非易失性存储器件和存储器控制器。存储器控制器被配置为对时钟进行计数以产生当前时间，在断电状态下在多个存储单元中的预定存储单元处编程虚拟数据，当开机状态时检测预定存储单元的电荷损失在电源关闭状态后发生，并根据检测到的电荷损失恢复当前时间。

5. 发明申请

US20190189192A1 BIT LINE SENSE AMPLIFIER, SEMICONDUCTOR MEMORY DEVICE AND MULTI BIT DATA SENSING METHOD THEREOF 审中-公开
公开(公告)号：US20190189192A1
公开(公告)日：2019-06-20
申请号：US16143380
申请日：2018-09-26
申请人： KYUNGRYUN KIM , YOUNGHUN SEO , SOOBONG CHANG
发明人： KYUNGRYUN KIM , YOUNGHUN SEO , SOOBONG CHANG
IPC分类号： G11C11/4091 , G11C11/56
CPC分类号： G11C11/4091 , G11C11/565
摘要： A semiconductor memory device includes a memory cell that stores multi-bit data, and a bit line sense amplifier that is connected to a bit line of the memory cell and a complementary bit line corresponding to the memory cell in an open bit line structure. The bit line sense amplifier includes a first latch that sequentially senses a first bit and a second bit of the stored multi-bit data and transmits the sensed first bit to a second latch, and a second latch that senses the transmitted bit from the first latch.

6. 发明申请

US20160307635A1 STORAGE DEVICE AND RELIABILITY VERIFICATION METHOD 审中-公开
标题翻译：存储设备和可靠性验证方法
公开(公告)号：US20160307635A1
公开(公告)日：2016-10-20
申请号：US15193134
申请日：2016-06-27
申请人： KYUNGRYUN KIM , TAEHOON KIM , SANGKWON MOON
发明人： KYUNGRYUN KIM , TAEHOON KIM , SANGKWON MOON
IPC分类号： G11C16/28 , G11C16/34
CPC分类号： G11C16/28 , G11C16/26 , G11C16/32 , G11C16/3495
摘要： A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.
摘要翻译：一种控制在包括非易失性存储装置的存储装置中执行可靠性验证操作的方法包括：确定非易失性存储装置内的指定单元的读取计数是否超过计数值限制，并且在确定读取计数超过计数值限制时，执行针对指定单元的可靠性验证操作，其中计数值限制为基于存储在存储装置中的读取计数信息，页面位图信息和环境信息中的至少一个。

7. 发明申请

US20160104539A1 STORAGE DEVICE AND RELIABILITY VERIFICATION METHOD 有权
公开(公告)号：US20160104539A1
公开(公告)日：2016-04-14
申请号：US14731779
申请日：2015-06-05
申请人： KYUNGRYUN KIM , TAEHOON KIM , SANGKWON MOON
发明人： KYUNGRYUN KIM , TAEHOON KIM , SANGKWON MOON
IPC分类号： G11C16/28 , G11C16/34
CPC分类号： G11C16/28 , G11C16/26 , G11C16/32 , G11C16/3495
摘要： A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

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