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1. 发明申请

US20170162234A1 DUAL-BIT 3-T HIGH DENSITY MTPROM ARRAY 有权
公开(公告)号：US20170162234A1
公开(公告)日：2017-06-08
申请号：US14961484
申请日：2015-12-07
申请人： GLOBALFOUNDRIES INC.
发明人： Ramesh Raghavan , Balaji Jayaraman , Janakiraman Viraraghavan , Thejas Kempanna , Rajesh Reddy Tummuru , Toshiaki Kirihata
IPC分类号： G11C7/06 , G11C7/18 , G11C5/14 , G11C7/12
CPC分类号： G11C5/06 , G11C5/063 , G11C5/14 , G11C5/147 , G11C7/06 , G11C7/062 , G11C7/1012 , G11C7/12 , G11C7/18 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/28 , G11C2207/002 , G11C2211/4013
摘要： A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

2. 发明授权

US09659604B1 Dual-bit 3-T high density MTPROM array 有权
公开(公告)号：US09659604B1
公开(公告)日：2017-05-23
申请号：US14961484
申请日：2015-12-07
申请人： GLOBALFOUNDRIES INC.
发明人： Ramesh Raghavan , Balaji Jayaraman , Janakiraman Viraraghavan , Thejas Kempanna , Rajesh Reddy Tummuru , Toshiaki Kirihata
IPC分类号： G11C11/56 , G11C7/06 , G11C7/12 , G11C7/18 , G11C5/14
CPC分类号： G11C5/06 , G11C5/063 , G11C5/14 , G11C5/147 , G11C7/06 , G11C7/062 , G11C7/1012 , G11C7/12 , G11C7/18 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/28 , G11C2207/002 , G11C2211/4013
摘要： A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

3. 发明申请

US20170256468A1 TEST METHOD AND STRUCTURE FOR INTEGRATED CIRCUITS BEFORE COMPLETE METALIZATION 有权
公开(公告)号：US20170256468A1
公开(公告)日：2017-09-07
申请号：US15062484
申请日：2016-03-07
申请人： GLOBALFOUNDRIES INC.
发明人： Janakiraman Viraraghavan , Ramesh Raghavan , Balaji Jayaraman , Thejas Kempanna , Rajesh R. Tummuru , Toshiaki Kirihata
IPC分类号： H01L21/66 , H01L27/105 , H01L49/02 , H01L27/115
CPC分类号： H01L22/32 , H01L22/14 , H01L22/20 , H01L22/22 , H01L27/1052 , H01L27/115 , H01L28/40
摘要： Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

4. 发明授权

US09460760B2 Data-dependent self-biased differential sense amplifier 有权
标题翻译：数据相关的自偏置差分读出放大器
公开(公告)号：US09460760B2
公开(公告)日：2016-10-04
申请号：US14604009
申请日：2015-01-23
申请人： GLOBALFOUNDRIES INC.
发明人： Balaji Jayaraman , Thejas Kempanna , Toshiaki Kirihata , Ramesh Raghavan , Krishnan S. Rengarajan , Rajesh R. Tummuru
IPC分类号： G11C7/06 , G11C7/08
CPC分类号： G11C7/062 , G11C7/065 , G11C7/08 , G11C11/401 , G11C11/4091 , G11C2211/4013
摘要： A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.
摘要翻译：一种操作双晶体管单比特多时间可编程存储器单元以提供小信号的高增益感测方案的系统和方法。存储单元包括一对第一晶体管和提供差分信号输出的第二晶体管。存储单元的第一晶体管耦合具有第一电流源负载晶体管的第一电路支路，而第二晶体管耦合具有第二电流源负载晶体管的第二电路支路。编程值由第一或第二晶体管之一中的电压阈值偏移来表示。反馈电路接收差分信号的第一信号或第二信号中的一个，并且响应地产生反馈信号，该反馈信号被同时施加以偏置每个第一和第二电路腿中的每个电流源负载晶体管，以放大差分信号输出之间的电压差。

5. 发明授权

US09859177B2 Test method and structure for integrated circuits before complete metalization 有权
公开(公告)号：US09859177B2
公开(公告)日：2018-01-02
申请号：US15062484
申请日：2016-03-07
申请人： GLOBALFOUNDRIES INC.
发明人： Janakiraman Viraraghavan , Ramesh Raghavan , Balaji Jayaraman , Thejas Kempanna , Rajesh R. Tummuru , Toshiaki Kirihata
IPC分类号： G11C7/00 , H01L21/66 , H01L27/115 , H01L27/105 , H01L49/02
CPC分类号： H01L22/32 , H01L22/14 , H01L22/20 , H01L22/22 , H01L27/1052 , H01L27/115 , H01L28/40
摘要： Aspects of the present disclosure include methods and test structures for an intermediate metal level of an integrated circuit (IC). A method according to the present disclosure can include: fabricating a first plurality of metal levels including an intermediate metal level of an IC structure, the intermediate metal level being one of a plurality of metal levels in the IC structure other than a capping metal level of the IC structure; performing a first functional test on a first circuit positioned within the intermediate metal level; fabricating a second plurality of metal levels after performing the first functional test, the second plurality of metal levels including the capping metal level of the IC structure; and performing a second functional test on a second circuit positioned within the plurality of metal levels, after the fabricating of the capping metal level.

6. 发明授权

US09786333B2 Dual-bit 3-T high density MTPROM array 有权
公开(公告)号：US09786333B2
公开(公告)日：2017-10-10
申请号：US15478820
申请日：2017-04-04
申请人： GLOBALFOUNDRIES INC.
发明人： Ramesh Raghavan , Balaji Jayaraman , Janakiraman Viraraghavan , Thejas Kempanna , Rajesh Reddy Tummuru , Toshiaki Kirihata
IPC分类号： G11C11/56 , G11C5/06 , G11C5/14 , G11C7/06 , G11C7/10 , G11C7/12 , G11C7/18
CPC分类号： G11C5/06 , G11C5/063 , G11C5/14 , G11C5/147 , G11C7/06 , G11C7/062 , G11C7/1012 , G11C7/12 , G11C7/18 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/28 , G11C2207/002 , G11C2211/4013
摘要： A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

7. 发明申请

US20170206938A1 DUAL-BIT 3-T HIGH DENSITY MTPROM ARRAY 有权
公开(公告)号：US20170206938A1
公开(公告)日：2017-07-20
申请号：US15478820
申请日：2017-04-04
申请人： GLOBALFOUNDRIES INC.
发明人： Ramesh Raghavan , Balaji Jayaraman , Janakiraman Viraraghavan , Thejas Kempanna , Rajesh Reddy Tummuru , Toshiaki Kirihata
IPC分类号： G11C5/06 , G11C7/06 , G11C7/10 , G11C5/14
CPC分类号： G11C5/06 , G11C5/063 , G11C5/14 , G11C5/147 , G11C7/06 , G11C7/062 , G11C7/1012 , G11C7/12 , G11C7/18 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/28 , G11C2207/002 , G11C2211/4013
摘要： A multi-time programmable memory (MTPM) memory cell and method of operating. Each MTPM bit cell including a first FET transistor and a second FET transistor having a first common connection, and said second FET transistor and a third FET transistor having a second common connection, said first and second connected FET transistors programmable to store a first bit value, and said second FET and said third connected FET transistors programmable to store a second bit value, wherein said first FET transistor exhibits a low threshold voltage value (LVT), said second FET transistor exhibits an elevated threshold voltage value HVT and said third FET transistor exhibits a threshold value LVT lower than HVT. The MTPM cell enables two bits of information to be stored as default bit values like an electrical fuse. To store opposite bit values, the LVT transistors are programmed such that their threshold voltage is higher than that of HVT.

8. 发明授权

US09721673B1 Distributed current source/sink using inactive memory elements 有权
公开(公告)号：US09721673B1
公开(公告)日：2017-08-01
申请号：US15363056
申请日：2016-11-29
申请人： GLOBALFOUNDRIES INC.
发明人： Ramesh Raghavan , Balaji Jayaraman , Rajesh R. Tummuru , Thejas Kempanna , Janakiraman Viraraghavan
IPC分类号： G11C16/04 , G11C17/18 , G11C17/16
CPC分类号： G11C17/18 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/26
摘要： A Multi-Time-Programmable-Memory (MTPM) array architecture, whose structure comprising of having Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) memory elements arranged in a set of twin-pairs coupled by wordlines (WLs), bitlines (BLs) and sourcelines (SLs). More specifically, the use of inactive portions of the MTPM array structure as substitutes for conventional BL write driver areas by utilizing a set of twin-pairs acting in parallel. These substituted twin-pair sets will improve programming efficiency (VGS) and retention (VDS) through a lowering Interconnect (IR) drop and VDS drops at the BL write driver.

9. 发明授权

US09589658B1 Disturb free bitcell and array 有权
标题翻译：免打扰bitcell和阵列
公开(公告)号：US09589658B1
公开(公告)日：2017-03-07
申请号：US14828770
申请日：2015-08-18
申请人： GLOBALFOUNDRIES Inc.
发明人： Navin Agarwal , Aditya S. Auyisetty , Balaji Jayaraman , Thejas Kempanna , Toshiaki Kirihata , Ramesh Raghavan , Krishnan S. Rengarajan , Rajesh R. Tummuru , Jay M. Shah , Janakiraman Viraraghavan
IPC分类号： G11C16/22 , G11C16/34
CPC分类号： G11C16/3427 , G11C7/02 , G11C16/0466 , G11C16/0475 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/28 , G11C17/14 , G11C17/18
摘要： Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.
摘要翻译：提供了包括单元阵列的存储器的方法。存储器包括连接到位线和节点并由字线控制的单元阵列的第一器件和单元阵列的第二器件，其包括连接到源极线和该节点的第三器件，以及由字线控制，第四器件连接在字线和节点之间。在存储器中，响应于单元阵列中的另一个字线被激活并且字线未被激活以保持第一器件处于未编程状态，第三器件隔离并漂浮该节点，使得栅极的电压电平第一器件的源极被第四器件钳位到零电压附近的电压电平。

10. 发明申请

US20160217832A1 DATA-DEPENDENT SELF-BIASED DIFFERENTIAL SENSE AMPLIFIER 有权
标题翻译：数据相关自偏差分感测放大器
公开(公告)号：US20160217832A1
公开(公告)日：2016-07-28
申请号：US14604009
申请日：2015-01-23
申请人： GLOBALFOUNDRIES INC.
发明人： Balaji Jayaraman , Thejas Kempanna , Toshiaki Kirihata , Ramesh Raghavan , Krishnan S. Rengarajan , Rajesh R. Tummuru
IPC分类号： G11C7/06 , G11C7/08
CPC分类号： G11C7/062 , G11C7/065 , G11C7/08 , G11C11/401 , G11C11/4091 , G11C2211/4013
摘要： A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.
摘要翻译：一种操作双晶体管单比特多时间可编程存储器单元以提供小信号的高增益感测方案的系统和方法。存储单元包括一对第一晶体管和提供差分信号输出的第二晶体管。存储单元的第一晶体管耦合具有第一电流源负载晶体管的第一电路支路，而第二晶体管耦合具有第二电流源负载晶体管的第二电路支路。编程值由第一或第二晶体管之一中的电压阈值偏移来表示。反馈电路接收差分信号的第一信号或第二信号中的一个，并且响应地产生反馈信号，该反馈信号被同时施加以偏置每个第一和第二电路腿中的每个电流源负载晶体管，以放大差分信号输出之间的电压差。

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