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1. 发明授权

US10559686B2 Methods of forming gate contact over active region for vertical FinFET, and structures formed thereby 有权
公开(公告)号：US10559686B2
公开(公告)日：2020-02-11
申请号：US16018970
申请日：2018-06-26
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Hui Zang , Steven R. Soss
IPC分类号： H01L29/78 , H01L29/06 , H01L27/06 , H01L29/66 , H01L29/08
摘要： Methods of making a vertical FinFET device having an electrical path over a gate contact landing, and the resulting device including a substrate having a bottom S/D layer thereover and fins extending vertically therefrom; a bottom spacer layer over the bottom S/D layer; a HKMG layer over the bottom spacer layer; a top spacer layer over the HKMG layer; a top S/D layer on top of each fin; top S/D contacts formed over the top S/D layer; an upper ILD layer present in spaces around the top S/D contacts; an isolation dielectric within a portion of a recess of top S/D contacts located above adjacent fins; a gate contact landing within a remaining portion of the recess; a gate contact extending vertically from a bottom surface of the gate contact landing and contacting a portion of the HKMG layer; and an electrical path over at least the gate contact landing.

2. 发明授权

US10510620B1 Work function metal patterning for N-P space between active nanostructures 有权
公开(公告)号：US10510620B1
公开(公告)日：2019-12-17
申请号：US16047043
申请日：2018-07-27
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Steven R. Soss , Steven J. Bentley , Julien Frougier , Ruilong Xie
IPC分类号： H01L21/8238 , H01L29/423 , H01L29/06 , H01L21/762 , H01L21/3213 , H01L29/66 , H01L27/092 , H01L27/11
摘要： A method includes forming an isolation pillar between first and second active nanostructures for adjacent FETs. A first WFM for one FET is deposited over the first active nanostructure, the pillar and the second active nanostructure. The first WFM is removed from a part of the pillar. The removing creates a discontinuity in the first WFM over the first active nano structure from the first WFM over the second active nanostructure but leaves the first WFM on sidewalls of the pillar. When the first WFM surrounding the second active nanostructure is removed, the pillar and the discontinuity in the first metal on the part of the pillar prevent the etching from reaching and removing the first WFM on the first active nanostructure. Depositing a second WFM surrounding the second active nanostructure and the isolation pillar forms part of the gate for the second FET and couples the FETs together.

3. 发明授权

US10332803B1 Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming 有权
公开(公告)号：US10332803B1
公开(公告)日：2019-06-25
申请号：US15973817
申请日：2018-05-08
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Edward J. Nowak , Bipul C. Paul , Steven R. Soss , Julien Frougier , Daniel Chanemougame , Lars W. Liebmann
IPC分类号： H01L21/8238 , H01L21/02 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/66 , H01L21/3065 , H01L21/308 , H01L27/092
摘要： Various embodiments relate to gate-all-around (GAA) transistors and methods of forming such transistors. In some embodiments, a method performed on a precursor structure includes selectively removing a sacrificial nanosheet to open a vertical gap between a pair of semiconductor nanosheets; forming a first work function metal to surround the precursor nanosheet stack and fin, the first work function metal filling the vertical gap between the pair of semiconductor nano sheets; selectively removing first work function metal surrounding the fin while preserving an entirety of first work function metal surrounding the nanosheet stack; and forming a second work function metal: over a remaining portion of the first work function metal on nanosheet stack, and surrounding the fin, where first work function metal includes a different material than second work function metal.

4. 发明申请

US20200035786A1 NANOSHEET FIELD EFFECT TRANSISTOR WITH SPACERS BETWEEN SHEETS 审中-公开
公开(公告)号：US20200035786A1
公开(公告)日：2020-01-30
申请号：US16044544
申请日：2018-07-25
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Julien Frougier , Nigel G. Cave , Steven R. Soss , Daniel Chanemougame , Steven Bentley , Rohit Galatage , Bum Ki Moon
IPC分类号： H01L29/06 , H01L29/66 , H01L21/02 , H01L21/8234 , H01L21/768 , H01L29/08
摘要： Methods form devices by creating openings in sacrificial gates between nanosheet stacks (alternating layers of a first material and channel structures), forming spacers in the openings, and removing the sacrificial gates to leave the spacers. The first material is then removed from between the channel structures. A first work function metal is formed around and between the channel structures. Next, first stacks (of the stacks) are protected with a mask to leave second stacks (of the stacks) exposed. Then, the first work function metal is removed from the second stacks while the first stacks are protected by the mask and the spacers. Subsequently, a second work function metal is formed around and between the channel structures of the second stacks. A gate material is then formed over the first work function metal and the second work function metal.

5. 发明授权

US10418368B1 Buried local interconnect in source/drain region 有权
公开(公告)号：US10418368B1
公开(公告)日：2019-09-17
申请号：US16031030
申请日：2018-07-10
申请人： GLOBALFOUNDRIES Inc.
发明人： Steven J. Bentley , Bipul C. Paul , Steven R. Soss
IPC分类号： H01L27/11 , H01L23/528 , H01L21/8238 , H01L29/06 , H01L21/768 , H01L29/78 , H01L29/10 , H01L29/08
摘要： A method for forming a buried local interconnect in a source/drain region is disclosed including, among other things, forming a plurality of VOC structures, forming a first source/drain region between a first pair of the plurality of VOC structures, forming a second source/drain region between a second pair of the plurality of VOC structures, and forming an isolation structure between the first and second source/drain regions. A first trench is formed in the first and second source/drain regions and the isolation structure. A liner layer is formed in the first trench, and a first conductive line is formed in the first trench. A dielectric material is formed above the first conductive line. A first opening is formed in the dielectric material to expose a portion of the first conductive line. A first conductive feature is formed in the first opening contacting the exposed portion of the first conductive line.

6. 发明授权

US10658243B2 Method for forming replacement metal gate and related structures 有权
公开(公告)号：US10658243B2
公开(公告)日：2020-05-19
申请号：US16002385
申请日：2018-06-07
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Daniel Chanemougame , Steven R. Soss , Steven J. Bentley , Chanro Park
IPC分类号： H01L21/8234 , H01L27/088 , H01L21/311 , H01L29/66 , H01L29/51
摘要： The present disclosure relates to methods for forming replacement metal gate (RMG) structures and related structures. A method may include: forming a portion of sacrificial material around each fin of a set of adjacent fins; forming a first dielectric region between the portions of sacrificial material; forming a second dielectric region on the first dielectric region; forming an upper source/drain region from an upper portion of each fin; removing only the second dielectric region and the sacrificial material; and forming a work function metal (WFM) in place of the second dielectric region and the sacrificial material. The semiconductor structure may include gate structures surrounding adjacent fins; a first dielectric region between the gate structures; a second dielectric region above the first dielectric region and between the gate structures; and a liner between the first dielectric region and the gate structures such that the second dielectric region directly contacts the gate structures.

7. 发明申请

US20190393342A1 METHODS OF FORMING GATE CONTACT OVER ACTIVE REGION FOR VERTICAL FINFET, AND STRUCTURES FORMED THEREBY 审中-公开
公开(公告)号：US20190393342A1
公开(公告)日：2019-12-26
申请号：US16018970
申请日：2018-06-26
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Hui Zang , Steven R. Soss
IPC分类号： H01L29/78 , H01L29/06 , H01L29/08 , H01L29/66 , H01L27/06
摘要： Methods of making a vertical FinFET device having an electrical path over a gate contact landing, and the resulting device including a substrate having a bottom S/D layer thereover and fins extending vertically therefrom; a bottom spacer layer over the bottom S/D layer; a HKMG layer over the bottom spacer layer; a top spacer layer over the HKMG layer; a top S/D layer on top of each fin; top S/D contacts formed over the top S/D layer; an upper ILD layer present in spaces around the top S/D contacts; an isolation dielectric within a portion of a recess of top S/D contacts located above adjacent fins; a gate contact landing within a remaining portion of the recess; a gate contact extending vertically from a bottom surface of the gate contact landing and contacting a portion of the HKMG layer; and an electrical path over at least the gate contact landing.

8. 发明授权

US09048171B2 Method to dynamically tune precision resistance 有权
标题翻译：动态调整精度电阻的方法
公开(公告)号：US09048171B2
公开(公告)日：2015-06-02
申请号：US14220475
申请日：2014-03-20
申请人： GLOBALFOUNDRIES Inc.
发明人： Steven R. Soss , Andreas Knorr
IPC分类号： H01L21/00 , H01L49/02
CPC分类号： H01L28/20
摘要： A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging.
摘要翻译：形成具有可控电阻的精密电阻器，以补偿随温度发生的变化。一个实施例包括形成在衬底上具有宽度和长度的电阻半导体元件，跨越电阻半导体元件的宽度图形化导电线，但与之电隔离，并且在电气半导体元件下方形成耗尽沟道导线来控制电阻半导体元件的电阻值。该设计能够动态调节电阻，从而提高电阻器的可靠性或允许最终封装期间的电阻修改。

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