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1. 发明授权

US3697829A Semiconductor devices with improved voltage breakdown characteristics 失效
标题翻译：具有改进的电压断开特性的半导体器件
公开(公告)号：US3697829A
公开(公告)日：1972-10-10
申请号：US3697829D
申请日：1968-12-30
申请人： GEN ELECTRIC
发明人： HUTH GERALD C , DAVIES ROBERT L
IPC分类号： H01L29/00 , H01L29/06 , H01L11/00
CPC分类号： H01L29/0661 , H01L29/00 , Y10S148/01 , Y10S148/054
摘要： To improve the reverse voltage breakdown characteristics of a semiconductor body having a junction therein formed by zones of dissimilar resistivities the periphery of the body adjacent the junction is beveled. With a positive bevel (lowest cross section zone having the highest resistivity) the reverse voltage breakdown characteristics improve progressively as the angle between the junction and the beveled periphery decreases. With a negative bevel (highest cross section zone having the highest resistivity) the reverse voltage breakdown characteristics are typically optimal in the range of from 4* to 9*. With a dielectric coating on the beveled periphery the angle range may be extended to from 1* to 25*. With two-junction bodies, for example semiconductor rectifiers and controlled rectifiers, having a higher resistivity N or P central zone between P or N zones, respectively, of lower resistivity, a combination of positive and negative bevels may be employed with like or dissimilar bevel angles at each junction.
摘要翻译：为了改善由具有不同电阻率的区域形成的具有结的半导体主体的反向电压击穿特性，与接合部相邻的主体的周边是斜面的。随着正斜面（具有最高电阻率的最低截面区域），反向电压击穿特性随着接合部和斜面周边之间的角度减小而逐渐改善。具有负斜率（具有最高电阻率的最高截面区域），反向电压击穿特性通常在4°至9°的范围内是最佳的。在斜面上的电介质涂层上，角度范围可以延伸到1°到25°。具有分别具有较低电阻率的P或N区之间的较高电阻率N或P中心区的双结体，例如半导体整流器和可控整流器可以使用正或负斜面的组合，具有相似或不相似的斜面每个交界处的角度。

2. 发明授权

US3370209A Power bulk breakdown semiconductor devices 失效
标题翻译：功率体分解半导体器件
公开(公告)号：US3370209A
公开(公告)日：1968-02-20
申请号：US39329064
申请日：1964-08-31
申请人： GEN ELECTRIC
发明人： DAVIS CALVIN M , DAVIES ROBERT L
IPC分类号： H01L29/00 , H01L29/06 , H01L29/10 , H01L29/74 , H01L29/86
CPC分类号： H01L29/66121 , H01L29/0657 , H01L29/0661 , H01L29/1016 , H01L29/102 , H01L29/66363 , H01L29/7432 , H01L29/868
摘要： 1,105,177. Semi-conductor rectifiers. GENERAL ELECTRIC CO. 13 Aug., 1965 [31 Aug., 1964], No. 34821/65. Heading H1K. A semi-conductor rectifier comprises at least three layers, adjacent layers being of unequal resistivities, and forming at least one PN junction, and means to increase the surface breakdown voltage comprising a relatively thick region surrounding a thinner inner region where avalanche breakdown occurs initially. Fig. 1 shows a PIN diode device of silicon or germanium in which the central region 16 underlying electrode 18 has a thin intrinsic layer 12 and is designed to provide the desired rectifier and avalanche breakdown characteristics. In the surrounding region 17 the intrinsic layer 12 is thicker to prevent surface breakdown. A controlled rectifier comprising P, N, N-, P, N layers is also described in which the thickness of the N- layer is increased in the outer region to achieve the same purpose; the impurity concentrations of the layer may be 10 20 , 10 17 , 10 13 , 10 18 and 10 21 respectively. The device may be produced by diffusing phosphorus and boron into high resistivity silicon.

3. 发明授权

US3575644A Semiconductor device with double positive bevel 失效
标题翻译：具有双重正电位的半导体器件
公开(公告)号：US3575644A
公开(公告)日：1971-04-20
申请号：US3575644D
申请日：1968-10-31
申请人： GEN ELECTRIC
发明人： HUTH GERALD C , DAVIES ROBERT L
IPC分类号： H01L21/00 , H01L21/60 , H01L29/06 , H01L9/00 , H01L9/12
CPC分类号： H01L29/0661 , H01L21/00 , H01L24/80 , H01L2924/01014 , H01L2924/01032 , H01L2924/01033 , H01L2924/0106 , H01L2924/01074 , H01L2924/10253 , H01L2924/12036 , H01L2924/3011 , H01L2924/00
摘要： To improve the reverse voltage breakdown characteristics of a semiconductor body having a junction therein formed by zones of dissimilar resistivities the periphery of the body adjacent the junction is beveled. With a positive bevel (lowest cross section zone having the highest resistivity) the reverse voltage breakdown characteristics improve progressively as the angle between the junction and the beveled periphery decreases. With two junction bodies having a higher resistivity N or P central zone between P or N zones, respectively, of lower resistivity a positive bevel may be provided at each junction so that a pulleylike concave periphery results with the minimum cross section of the body appearing in the central zone.

5. 发明授权

US3413527A Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device 失效
标题翻译：用于减少结半导体器件的结的区域中的电场的导电电极
公开(公告)号：US3413527A
公开(公告)日：1968-11-26
申请号：US40109164
申请日：1964-10-02
申请人： GEN ELECTRIC
发明人： DAVIES ROBERT L
IPC分类号： H01L21/22 , H01L23/31 , H01L29/00 , H01L29/06 , H01L29/41 , H01L29/423 , H01L29/73 , H01L29/74 , H01L29/86
CPC分类号： H01L29/74 , H01L21/22 , H01L23/31 , H01L29/00 , H01L29/06 , H01L29/41 , H01L29/423 , H01L29/73 , H01L29/86 , H01L2924/0002 , H01L2924/00

6. 发明授权

US3172068A Semiconductor device 失效
公开(公告)号：US3172068A
公开(公告)日：1965-03-02
申请号：US10098261
申请日：1961-04-05
申请人： GEN ELECTRIC
发明人： DAVIES ROBERT L
IPC分类号： H01L21/60 , H01L23/488
CPC分类号： H01L24/80 , H01L23/488 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01051 , H01L2924/01052 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , Y10T428/12528 , H01L2924/00

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