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    • 1. 发明申请
    • CHIP WITH INTEGRATED CIRCUIT AND MICRO-SILICON CONDENSER MICROPHONE INTEGRATED ON SINGLE SUBSTRATE AND METHOD FOR MAKING THE SAME
    • 具有集成电路的芯片和集成在单个基板上的微硅凝胶麦克风及其制造方法
    • US20130202136A1
    • 2013-08-08
    • US13561194
    • 2012-07-30
    • Wei HuGang LiJia-Xin Mei
    • Wei HuGang LiJia-Xin Mei
    • H04R1/00H01L21/02
    • B81C1/00158B81C1/00246H04R19/005H04R31/00
    • A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
    • 一种用于集成IC和MEMS部件的方法包括以下步骤:S1)提供具有第一区域(21)和第二区域(22)的SOI基底(20); S2)通过标准半导体工艺在第一区域上制造IC,同时形成延伸到第二区域的金属导电层(26)和介质绝缘层(25c); S3)部分地去除介质绝缘层,然后进一步部分去除硅组分层以形成背板图; S4)在SOI基底上方沉积牺牲层(32); S5)在牺牲层上形成Poly Sil-xGex膜(33); S6)形成后腔(34); 和S7)侵蚀牺牲层以形成与后腔连通的腔室(36)。 此外,还公开了通过上述方法制造的芯片(10)。
    • 2. 发明授权
    • Transverse acoustic wave resonator, oscillator having the resonator and method for making the resonator
    • 横波声波谐振器,具有谐振器的振荡器和用于制造谐振器的方法
    • US08482357B2
    • 2013-07-09
    • US13310687
    • 2011-12-02
    • Bin XiaoPing LvWei HuJia-Xin MeiGang Li
    • Bin XiaoPing LvWei HuJia-Xin MeiGang Li
    • H03B5/18
    • H03H9/2436H03H3/0072Y10T29/49016
    • A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.
    • 横波声谐振器包括基座,谐振器部件,固定到基座的多个驱动电极以及连接基座和谐振器部件的多个固定部分。 谐振器部件悬挂在基座的顶表面上方并且垂直于基座。 驱动电极耦合到谐振器部件的侧表面。 谐振器部件形成为基本正多边形的形状。 驱动电极和谐振器部件共同形成用于将电容转换成静电力的机电耦合系统。 此外,还公开了包括横向声波谐振器的电容式横向延伸声波硅振荡器和制造横向声波谐振器的方法。
    • 5. 发明授权
    • Chip with integrated circuit and micro-silicon condenser microphone integrated on single substrate and method for making the same
    • 芯片集成电路和微硅电容麦克风集成在单个基板上,并制作相同的方法
    • US09221675B2
    • 2015-12-29
    • US13561194
    • 2012-07-30
    • Wei HuGang LiJia-Xin Mei
    • Wei HuGang LiJia-Xin Mei
    • B81C1/00H04R31/00H04R19/00
    • B81C1/00158B81C1/00246H04R19/005H04R31/00
    • A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
    • 一种用于集成IC和MEMS部件的方法包括以下步骤:S1)提供具有第一区域(21)和第二区域(22)的SOI基底(20); S2)通过标准半导体工艺在第一区域上制造IC,同时形成延伸到第二区域的金属导电层(26)和介质绝缘层(25c); S3)部分地去除介质绝缘层,然后进一步部分去除硅组分层以形成背板图; S4)在SOI基底上方沉积牺牲层(32); S5)在牺牲层上形成Poly Sil-xGex膜(33); S6)形成后腔(34); 和S7)侵蚀牺牲层以形成与后腔连通的腔室(36)。 此外,还公开了通过上述方法制造的芯片(10)。
    • 9. 发明授权
    • Package for micro-electro-mechanical acoustic transducer with improved double side mountable electrodes
    • 用于具有改进的双面安装电极的微机电声换能器的封装
    • US08472647B2
    • 2013-06-25
    • US12416186
    • 2009-04-01
    • Jia-Xin MeiGang Li
    • Jia-Xin MeiGang Li
    • H04R25/00H01L29/84
    • H04R19/04H01L2224/45144H01L2224/48091H01L2224/48137H01L2924/3025H01L2924/00014H01L2924/00
    • A surface mountable package includes a base and a cover with a cavity defined thereby, and an acoustic transducer unit received in the cavity. The cover includes a first metal ring to enclose the acoustic transducer unit. The base includes a second metal ring to press against the first metal ring in order to form a metal shielding area. First and second metal connecting paths are formed electrically connected to the metal shielding area and the acoustic transducer unit, respectively. Besides, two pairs of first and second surface mountable metal electrodes are electrically connected to the first and the second metal connecting paths, respectively. As a result, the package can be selectively double surface mountable to a user's circuit board via the metal electrodes of the base or the metal electrodes of the cover.
    • 表面可安装的包装包括底座和由其限定的空腔的盖,以及容纳在空腔中的声学换能器单元。 盖包括用于封闭声换能器单元的第一金属环。 底座包括第二金属环,以压靠第一金属环以形成金属屏蔽区域。 第一和第二金属连接路径分别形成为电连接到金属屏蔽区域和声学换能器单元。 此外,两对第一和第二可表面安装的金属电极分别电连接到第一和第二金属连接路径。 结果,封装可以通过基座的金属电极或盖的金属电极选择性地双面表面安装到用户的电路板。