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1. 发明授权

US08450187B2 Method of cutting semiconductor substrate 有权
标题翻译：切割半导体衬底的方法
公开(公告)号：US08450187B2
公开(公告)日：2013-05-28
申请号：US13608676
申请日：2012-09-10
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
IPC分类号： H01L21/00
CPC分类号： H01L21/2633 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
摘要翻译：产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

2. 发明申请

US20060148212A1 Method for cutting semiconductor substrate 有权
标题翻译：半导体衬底切割方法
公开(公告)号：US20060148212A1
公开(公告)日：2006-07-06
申请号：US10537509
申请日：2003-09-11
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
IPC分类号： H01L21/78 , H01L21/301 , H01L21/46
CPC分类号： H01L21/2633 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
摘要翻译：产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。这样将硅晶片11沿着要切割的部分9以高精度切割成半导体芯片25。这里，相邻的半导体芯片25,25的相对的切断部25a，25a从紧密接触状态彼此分离，从而也沿着要切割的部分切割芯片接合树脂层23。因此，与不切割基底21时用刀片切割硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。

3. 发明申请

US20110306182A1 METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：切割半导体基板的方法
公开(公告)号：US20110306182A1
公开(公告)日：2011-12-15
申请号：US13206181
申请日：2011-08-09
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
IPC分类号： H01L21/78
CPC分类号： H01L21/2633 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
摘要翻译：产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

4. 发明申请

US20070085099A1 Semiconductor substrate cutting method 审中-公开
标题翻译：半导体衬底切割方法
公开(公告)号：US20070085099A1
公开(公告)日：2007-04-19
申请号：US10571142
申请日：2004-09-09
申请人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
发明人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
IPC分类号： H01L33/00
CPC分类号： B23K26/0884 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17. Therefore, when an expansion film 21 is attached to the rear face 17 of the wafer 11 by way of a die bonding resin layer 23 after forming the starting point region for cutting 8 and then expanded, the wafer 11 and die bonding resin layer 23 can be cut along the line along which the substrate should be cut 5.
摘要翻译：提供一种半导体衬底切割方法，其可以与芯片接合树脂层一起有效地切割具有由功能器件形成的正面的半导体衬底。在晶片11的背面17作为激光入射面的状态下，将聚光点P定位在晶片11内的激光L照射形成有功能元件15的正面3的晶圆11，以产生多光子吸收，由此由于晶片11内的熔融处理区域13沿着基板应被切割的线5而形成用于切割的起始点区域8。因此，可以自然地以相对小的力从起始点区域8产生断裂，以到达前表面3和后表面17。因此，在形成切割起点区域8之后，通过芯片接合树脂层23将膨胀膜21安装在晶片11的背面17上，然后膨胀时，晶片11和芯片接合树脂层23可以沿着基板切割的线切割5。

5. 发明授权

US08551817B2 Semiconductor substrate cutting method 有权
标题翻译：半导体衬底切割方法
公开(公告)号：US08551817B2
公开(公告)日：2013-10-08
申请号：US13269274
申请日：2011-10-07
申请人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
发明人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
IPC分类号： H01L21/00
CPC分类号： B23K26/0884 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.
摘要翻译：用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位晶片内的聚光点，从而产生多光子吸收，从而形成一个起始点区域，用于沿着一条线在晶片内熔融的处理区域进行切割。因此，可以从用于自然切割的起点区域或以相对小的力产生断裂，从而到达前表面和后表面。因此，在形成切割起点区域之后，通过芯片接合树脂层将膨胀膜附着到晶片的背面，然后扩大时，可以沿着线切割晶片和芯片接合树脂层。

6. 发明授权

US08409968B2 Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion 有权
标题翻译：通过改性区域形成和随后的片材膨胀来切割半导体衬底的方法
公开(公告)号：US08409968B2
公开(公告)日：2013-04-02
申请号：US13206181
申请日：2011-08-09
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
IPC分类号： H01L21/00
CPC分类号： H01L21/2633 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
摘要翻译：产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

7. 发明授权

US08263479B2 Method for cutting semiconductor substrate 有权
标题翻译：半导体衬底切割方法
公开(公告)号：US08263479B2
公开(公告)日：2012-09-11
申请号：US10537509
申请日：2003-09-11
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Ryuji Sugiura
IPC分类号： H01L21/00
CPC分类号： H01L21/2633 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
摘要翻译：产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

8. 发明授权

US08058103B2 Semiconductor substrate cutting method 有权
标题翻译：半导体衬底切割方法
公开(公告)号：US08058103B2
公开(公告)日：2011-11-15
申请号：US12603145
申请日：2009-10-21
申请人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
发明人： Kenshi Fukumitsu , Fumitsugu Fukuyo , Naoki Uchiyama , Ryuji Sugiura , Kazuhiro Atsumi
IPC分类号： H01L21/00
CPC分类号： B23K26/0884 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： A method for cutting a semiconductor substrate having a front face formed with functional devices together with a die bonding resin layer. A wafer having a front face formed with functional devices is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to form a starting point region for cutting due to a modified region within the wafer along a cutting line. When an expansion film is attached to the rear face by way of a die bonding resin layer after forming the starting point region and then expanded, a fracture can be generated from the starting point region which reaches the front face and rear face, consequently, the wafer and die bonding resin layer can be cut along the cutting line.
摘要翻译：一种用于切割具有由功能元件形成的正面与半导体接合树脂层的半导体基板的方法。用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位在晶片内的聚光点，从而形成切割起点区域由于沿着切割线的晶片内的改质区域。当在形成起点区域之后通过芯片接合树脂层将膨胀膜附着到后表面，然后膨胀时，可以从到达正面和背面的起点区域产生断裂，因此，晶片和芯片接合树脂层可以沿切割线切割。

9. 发明授权

US08946592B2 Laser processing method and laser processing apparatus 有权
标题翻译：激光加工方法和激光加工设备
公开(公告)号：US08946592B2
公开(公告)日：2015-02-03
申请号：US13432833
申请日：2012-03-28
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
IPC分类号： B23K26/00 , C03C23/00 , B23K26/03 , B23K26/04 , B23K26/06 , B23K26/073 , B23K26/08 , B23K26/36 , B23K26/40 , B28D5/00 , C03B33/023 , C03B33/08 , C03B33/10 , G02F1/1368
CPC分类号： H01L21/78 , B23K20/023 , B23K20/16 , B23K20/233 , B23K20/26 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/046 , B23K26/0624 , B23K26/066 , B23K26/073 , B23K26/0853 , B23K26/16 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B65G2249/04 , C03B33/023 , C03B33/082 , C03B33/102 , C03C23/0025 , G02F1/1368 , H01L21/6836 , H01L2221/68327 , Y02P40/57 , Y10T29/49144 , Y10T83/0341
摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.
摘要翻译：一种激光束加工方法和激光束加工装置，其能够切割工件而不会产生工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件表面上的预定切割线上工作的表面，引起多光子吸收并且具有位于工件内部的凝结点，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝结点，在工件内部形成改质区域，由此工件通过从修改区域开始沿着预定切割线开裂工件，并且因为脉冲激光束几乎不被吸收到表面上，所以以小的力切割。

10. 发明授权

US08946591B2 Method of manufacturing a semiconductor device formed using a substrate cutting method 有权
标题翻译：使用基板切割方法制造半导体器件的方法
公开(公告)号：US08946591B2
公开(公告)日：2015-02-03
申请号：US13428336
申请日：2012-03-23
申请人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
IPC分类号： B23K26/00 , C03C23/00 , B23K26/03 , B23K26/04 , B23K26/06 , B23K26/073 , B23K26/08 , B23K26/36 , B23K26/40 , C03B33/023 , C03B33/08 , C03B33/10 , G02F1/1368
CPC分类号： H01L21/78 , B23K20/023 , B23K20/16 , B23K20/233 , B23K20/26 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/046 , B23K26/0624 , B23K26/066 , B23K26/073 , B23K26/0853 , B23K26/16 , B23K26/364 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , B65G2249/04 , C03B33/023 , C03B33/082 , C03B33/102 , C03C23/0025 , G02F1/1368 , H01L21/6836 , H01L2221/68327 , Y02P40/57 , Y10T29/49144 , Y10T83/0341
摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.
摘要翻译：一种激光束加工方法和激光束加工装置，其能够切割工件而不会产生工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件表面上的预定切割线上工作的表面，引起多光子吸收并且具有位于工件内部的凝结点，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝结点，在工件内部形成改质区域，由此工件通过从修改区域开始沿着预定切割线开裂工件，并且因为脉冲激光束几乎不被吸收到表面上，所以以小的力切割。

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