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    • 6. 发明授权
    • Method of controlling welding current and inverter-controlled DC
resistance welding apparatus
    • 控制焊接电流的方法和逆变器控制的直流电阻焊接设备
    • US5938947A
    • 1999-08-17
    • US14385
    • 1998-01-27
    • Fumitomo TakanoKenji Miyanaga
    • Fumitomo TakanoKenji Miyanaga
    • B23K11/24B23K11/25
    • B23K11/257B23K11/241
    • Before a deterioration of a secondary current sensor is detected, a controller effects a feedback control process based on a secondary current from the secondary winding of a welding transformer which is energized by an inverter, for thereby controlling a welding current with a high degree of accuracy, e.g., an accuracy level of .+-.1%. At the same time, it is monitored whether a detected value of a primary current from the primary winding of the welding transformer, which is detected by a primary current sensor, exceeds a predetermined allowable range with respect to a reference value of the primary current. If the detected value of the primary current exceeds the predetermined allowable range, then it is decided that the secondary current sensor is deteriorated. When the secondary current sensor is deteriorated, the controller switches from the feedback control process based on the secondary current to a feedback control process based on the primary current to control the welding current with a certain degree of accuracy, e.g., an accuracy level of .+-.3%, without interrupting the welding process.
    • 在检测到二次电流传感器的劣化之前,控制器基于来自由变频器通电的焊接变压器的次级绕组的次级电流进行反馈控制处理,从而以高精度控制焊接电流 ,例如+/- 1%的精​​度水平。 同时,监测来自初级电流传感器检测到的来自焊接变压器的初级绕组的初级电流的检测值是否相对于初级电流的基准值超过预定的允许范围。 如果初级电流的检测值超过规定的容许范围,则判断为二次电流传感器劣化。 当二次电流传感器劣化时,控制器基于次级电流从反馈控制过程切换到基于初级电流的反馈控制过程,以一定程度的精度控制焊接电流,例如+ / -3%,不中断焊接过程。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08045335B2
    • 2011-10-25
    • US12376541
    • 2007-07-25
    • Fumitomo TakanoShinya WatanabeTsukasa AibaJoji NakashimaHiroshi Otsuka
    • Fumitomo TakanoShinya WatanabeTsukasa AibaJoji NakashimaHiroshi Otsuka
    • H05K1/11H01R9/00H01L21/70
    • H01L25/071H01L25/18H01L2224/48091H01L2224/48247H01L2224/49113H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/30107H01L2924/3011H01L2924/00014H01L2924/00
    • A semiconductor device includes first and second assembled bodies (12A, 12B). The first assembled body is provided with a first semiconductor chip, a high voltage bus bar (21) connected to one surface of the first semiconductor chip, a first metal wiring board (24-1) connected to the other surface of the first semiconductor chip with a bonding wire, and a third metal wiring board (24-3) connected to the first metal wiring board. The second assembled body is provided with a second semiconductor chip, a low voltage bus bar (23) connected to one surface of the second semiconductor chip with a bonding wire, a second metal wiring board (24-2) connected to the other surface of the second semiconductor chip, and a fourth metal wiring board (24-4) connected by being returned from an end portion of the second metal wiring board and arranged in parallel to the second metal wiring board. The first assembled body and the second assembled body are arranged in a stacked structure wherein the assembled bodies are being separated. Inductance of a main circuit is reduced by the semiconductor module structure.
    • 半导体器件包括第一和第二组装体(12A,12B)。 第一组装体设置有第一半导体芯片,连接到第一半导体芯片的一个表面的高压母线(21),连接到第一半导体芯片的另一个表面的第一金属布线板(24-1) 和与第一金属布线板连接的第三金属布线板(24-3)。 第二组装体设置有第二半导体芯片,利用接合线连接到第二半导体芯片的一个表面的低压母线(23),连接到第二半导体芯片的另一个表面的第二金属布线板(24-2) 第二半导体芯片和第四金属布线板(24-4),通过从第二金属布线板的端部返回并与第二金属布线板平行地布置。 第一组装体和第二组装体被布置成堆叠结构,其中组装体被分离。 通过半导体模块结构减小主电路的电感。