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1. 发明申请

US20090220892A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RESIST COATING AND DEVELOPING SYSTEM 有权
标题翻译：制造半导体器件的方法和电阻涂层和开发系统
公开(公告)号：US20090220892A1
公开(公告)日：2009-09-03
申请号：US12395937
申请日：2009-03-02
申请人： Fumiko IWAO , Satoru SHIMURA , Tetsu KAWASAKI
发明人： Fumiko IWAO , Satoru SHIMURA , Tetsu KAWASAKI
IPC分类号： G03F7/20 , G03B27/52
CPC分类号： G03B27/52 , G03F7/30 , G03F7/40
摘要： A method of manufacturing a semiconductor device includes: forming a resist layer on an underlayer, forming an exposed pattern in the resist layer, wherein the exposed pattern comprises a soluble layer and an insoluble layer, forming a resist pattern by removing the soluble layer from the resist layer in which the exposed pattern is formed, removing an intermediate exposed area from the resist pattern, forming a new soluble layer in a surface of the resist pattern from which the intermediate exposed area is removed by applying a reaction material to the resist pattern from which the intermediate exposed area is removed, wherein the reaction material generates a solubilization material that solubilizes the resist pattern, and removing the new soluble layer from the resist pattern.
摘要翻译：一种制造半导体器件的方法包括：在底层上形成抗蚀剂层，在抗蚀剂层中形成曝光图案，其中暴露图案包括可溶层和不溶层，通过从可溶层除去可溶层形成抗蚀剂图案形成曝光图案的抗蚀剂层，从抗蚀剂图案去除中间曝光区域，在抗蚀剂图案的表面形成新的可溶层，通过将抗反射材料从抗蚀剂图案施加到抗蚀剂图案上从中除去中间暴露区域去除中间暴露区域，其中反应材料产生溶解抗蚀剂图案的增溶材料，以及从抗蚀剂图案中除去新的可溶层。

2. 发明申请

US20080070167A1 EXPOSURE AND DEVELOPING METHOD 审中-公开
标题翻译：曝光和开发方法
公开(公告)号：US20080070167A1
公开(公告)日：2008-03-20
申请号：US11853416
申请日：2007-09-11
申请人： Nobuhiro TAKAHASHI , Satoru SHIMURA , Tetsu KAWASAKI , Hideharu KYOUDA
发明人： Nobuhiro TAKAHASHI , Satoru SHIMURA , Tetsu KAWASAKI , Hideharu KYOUDA
IPC分类号： G03C5/00
CPC分类号： G03F7/32 , G03F7/2041
摘要： An exposure and developing method includes a step of exposing a resist film having a protective surface on a surface thereof in the state that a liquid layer transparent to light is formed on the resist film, and developing the resist film after the exposure, wherein there is further provided a cleaning step for cleaning the surface of the resist film before the developing step with a cleaning liquid that contains a solvent of the protective film.
摘要翻译：曝光和显影方法包括以下步骤：在抗蚀剂膜上形成有透明的液体层的状态下在其表面上露出具有保护表面的抗蚀剂膜，并且在曝光之后使抗蚀剂膜显影，还提供了一种用于在显影步骤之前用含有保护膜的溶剂的清洁液清洁抗蚀剂膜的表面的清洁步骤。

3. 发明申请

US20120034779A1 APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件的装置
公开(公告)号：US20120034779A1
公开(公告)日：2012-02-09
申请号：US13276894
申请日：2011-10-19
申请人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
发明人： Satoru SHIMURA , Kazuhiro Kubota , Ryuichi Asako , Seiichi Takayama
IPC分类号： H01L21/308
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译：在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

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