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1. 发明授权

US5877978A Semiconductor memory device 失效
公开(公告)号：US5877978A
公开(公告)日：1999-03-02
申请号：US710215
申请日：1996-09-13
申请人： Fukashi Morishita , Shigeki Tomishima , Kazutani Arimoto
发明人： Fukashi Morishita , Shigeki Tomishima , Kazutani Arimoto
IPC分类号： H01L21/76 , G11C11/401 , G11C11/404 , G11C11/406 , G11C11/407 , G11C11/4074 , G11C11/408 , H01L21/8242 , H01L27/108 , G11C11/24
CPC分类号： G11C11/406 , G11C11/404 , G11C11/4074 , H01L29/7841
摘要： In a dynamic random access memory, at a time of body-refresh operation, a bit-line potential VBL is set to a body-refresh-potential VBR, and the body-refresh-potential VBR is supplied to bit-line pairs via a bit-line precharging/equalizing circuit 111c, thereby the charge accumulated in the body of the n channel MOS transistor 72cb in a memory cell is drained to the bit-line pairs.

2. 发明授权

US6081443A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US6081443A
公开(公告)日：2000-06-27
申请号：US222799
申请日：1998-12-30
申请人： Fukashi Morishita , Shigeki Tomishima , Kazutani Arimoto
发明人： Fukashi Morishita , Shigeki Tomishima , Kazutani Arimoto
IPC分类号： H01L21/76 , G11C11/401 , G11C11/404 , G11C11/406 , G11C11/407 , G11C11/4074 , G11C11/408 , H01L21/8242 , H01L27/108 , G11C11/24
CPC分类号： G11C11/406 , G11C11/404 , G11C11/4074 , H01L29/7841
摘要： In a dynamic random access memory, at a time of body-refresh operation, a bit-line potential VBL is set to a body-refresh-potential VBR, and the body-refresh-potential VBR is supplied to bit-line pairs via a bit-line precharging/equalizing circuit 111c, thereby the charge accumulated in the body of the n channel MOS transistor 72cb in a memory cell is drained to the bit-line pairs.
摘要翻译：在动态随机存取存储器中，在身体刷新操作时，位线电位VBL被设置为身体刷新电位VBR，并且身体刷新电位VBR经由位线预充电/均衡电路111c，由此积蓄在存储单元中的n沟道MOS晶体管72cb的体中的电荷被排出到位线对。

3. 发明授权

US08638583B2 Content addressable memory 有权
标题翻译：内容可寻址内存
公开(公告)号：US08638583B2
公开(公告)日：2014-01-28
申请号：US13621078
申请日：2012-09-15
申请人： Naoya Watanabe , Isamu Hayashi , Teruhiko Amano , Fukashi Morishita , Kenji Yoshinaga , Mihoko Akiyama , Shinya Miyazaki , Masakazu Ishibashi , Katsumi Dosaka
发明人： Naoya Watanabe , Isamu Hayashi , Teruhiko Amano , Fukashi Morishita , Kenji Yoshinaga , Mihoko Akiyama , Shinya Miyazaki , Masakazu Ishibashi , Katsumi Dosaka
IPC分类号： G11C15/00 , G11C15/04 , G11C7/14 , G11C7/06 , G11C7/12 , G11C7/22
CPC分类号： G11C15/043 , G11C7/06 , G11C7/12 , G11C7/14 , G11C7/22 , G11C15/04 , G11C15/046
摘要： An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a match line current flowing in a one-bit miss state in one entry, but larger than a match line current flowing in an all-bit match state in one entry. A precharge voltage level of a match line is restricted to a voltage level of half a power supply voltage or smaller. Power consumption in a search cycle of a content addressable memory can be reduced, and a search operation speed can be increased.
摘要翻译：包括存储数据位的单位单元的多个比特的条目耦合到匹配线。匹配线具有一个充电电流，该充电电流的限制电流值小于在一个条目中以一位未命中状态流动的匹配线电流，但大于在一个条目中以全位匹配状态流动的匹配线电流。匹配线的预充电电压电平被限制为电源电压的一半或更小的电压电平。可以减少内容可寻址存储器的搜索周期中的功耗，并且可以提高搜索操作速度。

4. 发明授权

US08154271B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08154271B2
公开(公告)日：2012-04-10
申请号：US13115327
申请日：2011-05-25
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： G05F3/16
CPC分类号： G05F1/465
摘要： The semiconductor integrated circuit device includes load circuits and internal voltage generators for generating internal source voltages for driving the load circuits. Each of the internal voltage generators includes a reference voltage generating circuit for generating reference voltages, and regulator circuits for generating the internal source voltages with reference to the reference voltages. The regulator circuit is formed over an SOI substrate and includes a preamplifier circuit for detecting and amplifying a difference between each of the internal source voltages and each of the reference voltages, a main amplifier circuit for amplifying the output of the preamplifier circuit and generating a control signal, and a driver circuit for generating the internal source voltage in response to the control signal. An input stage of the main amplifier circuit is configured by MOS transistors coupling the gates and bodies of the MOS transistors.
摘要翻译：半导体集成电路装置包括用于产生驱动负载电路的内部源电压的负载电路和内部电压发生器。每个内部电压发生器包括用于产生参考电压的参考电压产生电路和用于参考参考电压产生内部源极电压的调节器电路。调节器电路形成在SOI衬底上，并且包括用于检测和放大每个内部源电压和每个参考电压之间的差的前置放大器电路，用于放大前置放大器电路的输出并产生控制的主放大器电路信号和用于响应于控制信号产生内部源电压的驱动器电路。主放大器电路的输入级由耦合MOS晶体管的栅极和主体的MOS晶体管构成。

5. 发明申请

US20110221419A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20110221419A1
公开(公告)日：2011-09-15
申请号：US13115327
申请日：2011-05-25
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： G05F3/16
CPC分类号： G05F1/465
摘要： The semiconductor integrated circuit device includes load circuits and internal voltage generators for generating internal source voltages for driving the load circuits. Each of the internal voltage generators includes a reference voltage generating circuit for generating reference voltages, and regulator circuits for generating the internal source voltages with reference to the reference voltages. The regulator circuit is formed over an SOI substrate and includes a preamplifier circuit for detecting and amplifying a difference between each of the internal source voltages and each of the reference voltages, a main amplifier circuit for amplifying the output of the preamplifier circuit and generating a control signal, and a driver circuit for generating the internal source voltage in response to the control signal. An input stage of the main amplifier circuit is configured by MOS transistors coupling the gates and bodies of the MOS transistors.
摘要翻译：半导体集成电路装置包括用于产生驱动负载电路的内部源电压的负载电路和内部电压发生器。每个内部电压发生器包括用于产生参考电压的参考电压产生电路和用于参考参考电压产生内部源极电压的调节器电路。调节器电路形成在SOI衬底上，并且包括用于检测和放大每个内部源电压和每个参考电压之间的差的前置放大器电路，用于放大前置放大器电路的输出并产生控制的主放大器电路信号和用于响应于控制信号产生内部源电压的驱动器电路。主放大器电路的输入级由耦合MOS晶体管的栅极和主体的MOS晶体管构成。

6. 发明授权

US08004923B2 Semiconductor device including internal voltage generation circuit 失效
标题翻译：半导体器件包括内部电压产生电路
公开(公告)号：US08004923B2
公开(公告)日：2011-08-23
申请号：US12683838
申请日：2010-01-07
申请人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
发明人： Mihoko Akiyama , Futoshi Igaue , Kenji Yoshinaga , Masashi Matsumura , Fukashi Morishita
IPC分类号： G11C5/14
CPC分类号： G05F1/468 , G11C5/025 , G11C5/147
摘要： A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
摘要翻译：半导体集成电路器件具有设置在每个用于六个存储器宏的电源电路单元的负电压产生电路。因此，相对于负电压的变化的响应增加。在待机模式下，通过开关电路连接六个存储器宏的负电压供给线，并且仅在六个电源电路单元的六个负电压产生电路中仅一个电源电路单元的负电压产生电路活性。因此，可以防止待机电流的增加。

7. 发明授权

US07977932B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07977932B2
公开(公告)日：2011-07-12
申请号：US12206907
申请日：2008-09-09
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： G05F3/16
CPC分类号： G05F1/465
摘要： The present invention provides a regulator circuit that can fast-respond to a variation in load current and supply a sufficient drive current so as to be capable of generating a stable internal source voltage. The regulator circuit includes a preamplifier circuit that detects and amplifies a different between a reference voltage and an internal source voltage, a clamp circuit that limits the amplitude of an output of the preamplifier circuit, a main amplifier circuit that amplifies the amplitude-limited output of the preamplifier circuit, and a driver circuit that outputs the internal source voltage according to the output of the main amplifier. Even though the internal source voltage varies abruptly, the regulator circuit does not oscillate owing to the effect of the clamp circuit.
摘要翻译：本发明提供了一种调节器电路，其能够快速响应负载电流的变化并提供足够的驱动电流，以便能够产生稳定的内部源电压。调节器电路包括前置放大器电路，其检测和放大参考电压和内部源极电压之间的不同，限制前置放大器电路的输出的幅度的钳位电路，放大限幅输出的主放大器电路前置放大器电路和根据主放大器的输出输出内部源电压的驱动电路。即使内部源电压突然变化，调节器电路也不会由于钳位电路的影响而振荡。

8. 发明授权

US07910975B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07910975B2
公开(公告)日：2011-03-22
申请号：US10593275
申请日：2005-06-03
申请人： Fukashi Morishita , Kazutami Arimoto
发明人： Fukashi Morishita , Kazutami Arimoto
IPC分类号： H01L29/788 , H01L27/01 , H01L27/12
CPC分类号： G11C11/405 , G11C2211/4016 , H01L27/108 , H01L27/10802
摘要： The present invention aims at providing a semiconductor memory device that can be manufactured by a MOS process and can realize a stable operation. A storage transistor has impurity diffusion regions, a channel formation region, a charge accumulation node, a gate oxide film, and a gate electrode. The gate electrode is connected to a gate line and the impurity diffusion region is connected to a source line. The storage transistor creates a state where holes are accumulated in the charge accumulation node and a state where the holes are not accumulated in the charge accumulation node to thereby store data “1” and data “0”, respectively. An access transistor has impurity diffusion regions, a channel formation region, a gate oxide film, and a gate electrode. The impurity diffusion region is connected to a bit line.
摘要翻译：本发明的目的在于提供一种可以通过MOS工艺制造并可实现稳定操作的半导体存储器件。存储晶体管具有杂质扩散区域，沟道形成区域，电荷累积节点，栅极氧化膜和栅电极。栅电极连接到栅极线，杂质扩散区连接到源极线。存储晶体管产生在电荷累积节点中积累空穴的状态和空穴未积累在电荷累积节点中的状态，从而分别存储数据“1”和数据“0”。存取晶体管具有杂质扩散区，沟道形成区，栅极氧化膜和栅电极。杂质扩散区域连接到位线。

9. 发明授权

US07906990B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07906990B2
公开(公告)日：2011-03-15
申请号：US12677745
申请日：2008-09-19
申请人： Fukashi Morishita
发明人： Fukashi Morishita
IPC分类号： H01L25/00 , H03K19/00 , H03K19/20
CPC分类号： H01L27/1203 , H01L27/088 , H01L27/108 , H01L27/10802 , H01L27/10844 , H01L29/7841 , H01L29/78615
摘要： The present invention provides a semiconductor integrated circuit device in which characteristics of an SOI transistor are effectively used to achieve higher speed, higher degree of integration, and also reduction in voltage and power consumption. The semiconductor integrated circuit device according to the present invention has a configuration in which a plurality of external power supply lines and body voltage control lines are alternately arranged in one direction so as to extend over the entire chip, which supply power and a body voltage to logic circuits, an analog circuit and memory circuits. A body voltage control type logic gate is fully applied in the logic circuit, whereas the body voltage control type logic gate is partially applied in the memory circuit.
摘要翻译：本发明提供一种半导体集成电路器件，其中SOI晶体管的特性被有效地用于实现更高的速度，更高的集成度，并且还降低了电压和功耗。根据本发明的半导体集成电路器件具有这样的结构，其中多个外部电源线和体电压控制线在一个方向上交替布置，以便在整个芯片上延伸，从而将电源和体电压提供给逻辑电路，模拟电路和存储器电路。体电压控制型逻辑门完全应用在逻辑电路中，而体电压控制型逻辑门部分地应用于存储器电路中。

10. 发明申请

US20080252388A1 Oscillator and charge pump circuit using the same 失效
公开(公告)号：US20080252388A1
公开(公告)日：2008-10-16
申请号：US12155876
申请日：2008-06-11
申请人： Masanobu Kishida , Fukashi Morishita
发明人： Masanobu Kishida , Fukashi Morishita
IPC分类号： H03B1/00
CPC分类号： H03K3/0315 , H03K17/063
摘要： The present invention provides a current-limited oscillator capable of performing stable operation even when it is driven with a low power-supply voltage, and a charge pump circuit using the oscillator. A current-limited oscillator has a delay section that includes a plurality of series-connected inverters to delay an output pulse on the basis of a current limiting level indication signal, and the oscillator further includes at least one first transistor that limits a first current between the inverters and a high potential power supply and at least one second transistor that limits a second current between the inverters and a low potential power supply, wherein at least one of the plurality of inverters is configured as a first inverter that is connected with the first transistor and is not connected with the second transistor, and at least another of the plurality of inverters is configured as a second inverter that is not connected with the first transistor and is connected with the second transistor.

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