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1. 发明授权

US08669601B2 Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor 有权
标题翻译：具有柱状半导体的半导体装置及半导体装置的制造方法
公开(公告)号：US08669601B2
公开(公告)日：2014-03-11
申请号：US13609992
申请日：2012-09-11
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/78642
摘要： A method for producing a semiconductor device includes the steps of forming first and second pillar-shaped semiconductors on a substrate at the same time so as to have the same height; forming a first semiconductor layer by doping a bottom region of the first pillar-shaped semiconductor with a donor or acceptor impurity to connect the first semiconductor layer to the second pillar-shaped semiconductor; forming a circuit element including an upper semiconductor region formed by doping an upper region of the first pillar-shaped semiconductor with a donor or acceptor impurity; forming a first conductor layer in the second pillar-shaped semiconductor; forming first and second contact holes that are respectively connected to the first and second pillar-shaped semiconductors; and forming a wiring metal layer that is connected to the upper semiconductor region and the first conductor layer through the first and second contact holes, respectively.
摘要翻译：制造半导体器件的方法包括以下步骤：同时在衬底上形成第一和第二柱状半导体以具有相同的高度; 通过用供体或受体杂质掺杂第一柱状半导体的底部区域来形成第一半导体层，以将第一半导体层连接到第二柱状半导体; 形成电路元件，该电路元件包括通过用供体或受体杂质掺杂第一柱状半导体的上部区域形成的上部半导体区域; 在所述第二柱状半导体中形成第一导体层; 形成分别连接到第一和第二柱状半导体的第一和第二接触孔; 以及分别通过第一和第二接触孔形成连接到上半导体区域和第一导体层的布线金属层。

2. 发明授权

US08564034B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08564034B2
公开(公告)日：2013-10-22
申请号：US13606823
申请日：2012-09-07
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/062
CPC分类号： H01L27/14616 , H01L27/14614
摘要： In a solid-state imaging device, a pixel has a first island-shaped semiconductor (P11) formed on a substrate (1) and a drive output circuit has second island-shaped semiconductors (4a to 4c) formed on the substrate at the same height as that of the first island-shaped semiconductor (P11). The first island-shaped semiconductor (P11) has a first gate insulating layer (6b) formed on an outer periphery thereof and a first gate conductor layer (105a) surrounding the first gate insulating layer (6b). The second island-shaped semiconductors (4a to 4c) have a second gate insulating layer (6a) formed on an outer periphery thereof and a second gate conductor layer (7a) surrounding the second gate insulating layer (6a). The first gate conductor layer (105a) and the second gate conductor layer (7a) have bottom portions located on the same plane.
摘要翻译：在固态成像装置中，像素具有形成在基板（1）上的第一岛状半导体（P11），驱动输出电路具有形成在基板上的第二岛状半导体（4a〜4c）高度为第一岛状半导体（P11）的高度。第一岛状半导体（P11）具有形成在其外周上的第一栅极绝缘层（6b）和围绕第一栅极绝缘层（6b）的第一栅极导体层（105a）。第二岛状半导体（4a〜4c）具有在其外周形成的第二栅极绝缘层（6a）和围绕第二栅极绝缘层（6a）的第二栅极导体层（7a）。第一栅极导体层（105a）和第二栅极导体层（7a）具有位于同一平面上的底部。

3. 发明授权

US08476699B2 Method for producing semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US08476699B2
公开(公告)日：2013-07-02
申请号：US13414039
申请日：2012-03-07
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L29/66 , H01L31/062 , H01L27/14 , H01L31/06 , H01L27/108 , H01L21/00 , H01L21/46 , H01L21/461
CPC分类号： H01L21/823487 , H01L21/823885 , H01L27/0629 , H01L27/088 , H01L27/092 , H01L27/14612 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L29/6609 , H01L29/66666 , H01L29/66909 , H01L29/7827 , H01L29/8083 , H01L29/8613
摘要： A method for producing a semiconductor device includes a step of forming a conductor layer and a first semiconductor layer containing a donor impurity or an acceptor impurity on a first semiconductor substrate; a step of forming a second insulating layer so as to cover the first semiconductor layer; a step of thinning the first semiconductor substrate to a predetermined thickness; a step of forming, from the first semiconductor substrate, a pillar-shaped semiconductor having a pillar-shaped structure on the first semiconductor layer; a step of forming a first semiconductor region in the pillar-shaped semiconductor by diffusing the impurity from the first semiconductor layer; and a step of forming a pixel of a solid-state imaging device with the pillar-shaped semiconductor into which the impurity has been diffused.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底上形成导体层和含有施主杂质或受主杂质的第一半导体层的步骤; 形成第二绝缘层以覆盖第一半导体层的步骤; 将第一半导体衬底细化为预定厚度的步骤; 从所述第一半导体基板形成在所述第一半导体层上具有柱状结构的柱状半导体的工序; 通过从第一半导体层扩散杂质而在柱状半导体中形成第一半导体区域的步骤; 以及用杂质扩散到其中的柱状半导体形成固态成像装置的像素的步骤。

4. 发明申请

US20120025281A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20120025281A1
公开(公告)日：2012-02-02
申请号：US13182872
申请日：2011-07-14
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/0224
CPC分类号： H01L27/14601
摘要： A pixel includes at least first to fourth semiconductor tiers. The first semiconductor tier includes a first semiconductor region that is electrically connected to a first external circuit, a second semiconductor region, and a third semiconductor region that is isolated from the first semiconductor region by the second semiconductor region and that is electrically connected to a second external circuit. The second semiconductor tier includes a MOS transistor that has insulating films and gate conductive electrodes that are electrically connected to a third external circuit. The third semiconductor tier includes a photodiode formed of the second and fourth semiconductor regions. A junction transistor is formed in which the fourth semiconductor region serves as a gate and in which one of the first and fifth semiconductor regions serves as a drain and the other serves as a source.
摘要翻译：像素包括至少第一至第四半导体层。第一半导体层包括电连接到第一外部电路，第二半导体区域和第三半导体区域的第一半导体区域，第三半导体区域与第二半导体区域与第一半导体区域隔离，并且与第二半导体区域电连接到第二半导体区域外部电路。第二半导体层包括具有电连接到第三外部电路的绝缘膜和栅极导电电极的MOS晶体管。第三半导体层包括由第二和第四半导体区形成的光电二极管。形成结型晶体管，其中第四半导体区域用作栅极，并且第一和第五半导体区域中的一个用作漏极，另一个用作源极。

5. 发明申请

US20110220969A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110220969A1
公开(公告)日：2011-09-15
申请号：US13046113
申请日：2011-03-11
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L27/148
CPC分类号： H01L27/1461 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： Each pixel of a solid state imaging device comprises: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer and fourth semiconductor layer formed on the lateral side of the upper region of the second layer not to be in contact with the top surface of the second semiconductor layer; a gate conductor layer formed on the lower side of the second semiconductor layer; a conductor electrode formed on the side of the fourth semiconductor layer via an insulating film; and a fifth semiconductor layer formed on the top surface of the second semiconductor layer, wherein at least the third semiconductor layer, upper region of the second semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer are formed in the shape of an island. A specific voltage is applied to the conductor electrode to accumulate holes in the surface region of the fourth semiconductor layer.
摘要翻译：固态成像装置的每个像素包括：第一半导体层; 第二半导体层; 形成在所述第二层的上部区域的侧面上的第三半导体层和第四半导体层不与所述第二半导体层的顶表面接触; 形成在第二半导体层的下侧的栅极导体层; 导体电极，经由绝缘膜形成在第四半导体层的侧面上; 以及形成在所述第二半导体层的顶表面上的第五半导体层，其中至少所述第三半导体层，所述第二半导体层的上部区域，第四半导体层和第五半导体层形成为岛状。向导体电极施加特定的电压，以在第四半导体层的表面区域中积聚孔。

6. 发明授权

US08426902B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08426902B2
公开(公告)日：2013-04-23
申请号：US13182872
申请日：2011-07-14
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14601
摘要： A pixel includes at least first to fourth semiconductor tiers. The first semiconductor tier includes a first semiconductor region that is electrically connected to a first external circuit, a second semiconductor region, and a third semiconductor region that is isolated from the first semiconductor region by the second semiconductor region and that is electrically connected to a second external circuit. The second semiconductor tier includes a MOS transistor that has insulating films and gate conductive electrodes that are electrically connected to a third external circuit. The third semiconductor tier includes a photodiode formed of the second and fourth semiconductor regions. A junction transistor is formed in which the fourth semiconductor region serves as a gate and in which one of the first and fifth semiconductor regions serves as a drain and the other serves as a source.
摘要翻译：像素包括至少第一至第四半导体层。第一半导体层包括电连接到第一外部电路，第二半导体区域和第三半导体区域的第一半导体区域，第三半导体区域与第二半导体区域与第一半导体区域隔离，并且与第二半导体区域电连接到第二半导体区域外部电路。第二半导体层包括具有电连接到第三外部电路的绝缘膜和栅极导电电极的MOS晶体管。第三半导体层包括由第二和第四半导体区形成的光电二极管。形成结型晶体管，其中第四半导体区域用作栅极，并且第一和第五半导体区域中的一个用作漏极，另一个用作源极。

7. 发明授权

US08378400B2 Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08378400B2
公开(公告)日：2013-02-19
申请号：US13205819
申请日：2011-08-09
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/0232
CPC分类号： H01L31/035281 , H01L27/14627 , H01L27/14629 , H01L31/022416 , H01L31/02327 , H01L31/103 , Y02E10/50
摘要： An island-shaped semiconductor constituting a pixel includes a first semiconductor N+-region formed on a substrate, a second semiconductor P-region formed on the region, third semiconductor N-regions formed on upper lateral sides of the region, insulating layers formed on the outer periphery of the regions and lower lateral sides of the region, gate conductive layers formed on the outer periphery of the insulating layers and functioning as gate electrodes forming a channel in a lower area of the region, light-reflection conductive layers formed on the outer periphery of the N regions and a portion of the insulating layers where the gate conductive layers are not formed, a fifth semiconductor P+-region formed on the region and the regions, and a microlens formed on the region and whose focal point is located near the upper surface of the region.
摘要翻译：构成像素的岛状半导体包括在基板上形成的第一半导体N +区域，形成在该区域上的第二半导体P区域，形成在该区域的上侧面上的第三半导体N区域，形成在该区域上的绝缘层区域的外周和区域的下侧面，形成在绝缘层的外周上并用作在该区域的下部区域中形成沟道的栅电极的栅极导电层，形成在外部的光反射导电层 N区域的周边和不形成栅极导电层的绝缘层的一部分，形成在该区域和区域上的第五半导体P +区域和形成在该区域上并且其焦点位于该区域附近的微透镜该区域的上表面。

8. 发明申请

US20120228677A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于生产半导体器件和半导体器件的方法
公开(公告)号：US20120228677A1
公开(公告)日：2012-09-13
申请号：US13414039
申请日：2012-03-07
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L27/06 , H01L21/8234 , H01L21/336 , H01L29/78 , H01L29/06
CPC分类号： H01L21/823487 , H01L21/823885 , H01L27/0629 , H01L27/088 , H01L27/092 , H01L27/14612 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L29/6609 , H01L29/66666 , H01L29/66909 , H01L29/7827 , H01L29/8083 , H01L29/8613
摘要： A method for producing a semiconductor device includes a step of forming a conductor layer and a first semiconductor layer containing a donor impurity or an acceptor impurity on a first semiconductor substrate; a step of forming a second insulating layer so as to cover the first semiconductor layer; a step of thinning the first semiconductor substrate to a predetermined thickness; a step of forming, from the first semiconductor substrate, a pillar-shaped semiconductor having a pillar-shaped structure on the first semiconductor layer; a step of forming a first semiconductor region in the pillar-shaped semiconductor by diffusing the impurity from the first semiconductor layer; and a step of forming a pixel of a solid-state imaging device with the pillar-shaped semiconductor into which the impurity has been diffused.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底上形成导体层和含有施主杂质或受主杂质的第一半导体层的步骤; 形成第二绝缘层以覆盖第一半导体层的步骤; 将第一半导体衬底细化为预定厚度的步骤; 从所述第一半导体基板形成在所述第一半导体层上具有柱状结构的柱状半导体的工序; 通过从第一半导体层扩散杂质而在柱状半导体中形成第一半导体区域的步骤; 以及用杂质扩散到其中的柱状半导体形成固态成像装置的像素的步骤。

9. 发明授权

US08575662B2 Solid state imaging device having high pixel density 有权
标题翻译：具有高像素密度的固态成像装置
公开(公告)号：US08575662B2
公开(公告)日：2013-11-05
申请号：US13043081
申请日：2011-03-08
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L27/148
CPC分类号： H04N5/3745 , H01L27/14607 , H01L27/14612 , H01L27/14629 , H01L27/1463 , H01L27/14689
摘要： Each pixel of a solid state imaging device comprises a first semiconductor layer formed on a substrate, having a first-conductive type; a second semiconductor layer formed thereon, having a second-conductivity type; a third semiconductor layer formed in the upper side of the second semiconductor layer, having the first-conductivity type; a fourth semiconductor layer formed in the outer side of the third semiconductor layer, having the second-conductivity type; a gate conductor layer formed on the lower side of the second semiconductor layer via an insulating film; and a fifth semiconductor layer formed on the top surfaces of the second semiconductor layer and third semiconductor layer, having the second-conductivity type, wherein the fifth semiconductor layer and fourth semiconductor layer are connected to each other, and at least the third semiconductor layer, upper region of the second semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer are formed in an island.
摘要翻译：固态成像装置的每个像素包括形成在具有第一导电类型的基板上的第一半导体层; 形成在其上的第二半导体层，具有第二导电类型; 形成在所述第二半导体层的上侧的具有所述第一导电型的第三半导体层; 形成在第三半导体层的外侧的具有第二导电型的第四半导体层; 通过绝缘膜形成在第二半导体层的下侧上的栅极导体层; 以及第五半导体层，形成在具有第二导电型的第二半导体层和第三半导体层的顶表面上，其中第五半导体层和第四半导体层彼此连接，并且至少第三半导体层，第二半导体层的上部区域，第四半导体层和第五半导体层形成为岛状。

10. 发明授权

US08487357B2 Solid state imaging device having high sensitivity and high pixel density 有权
标题翻译：具有高灵敏度和高像素密度的固态成像装置
公开(公告)号：US08487357B2
公开(公告)日：2013-07-16
申请号：US13046113
申请日：2011-03-11
申请人： Fujio Masuoka , Nozomu Harada
发明人： Fujio Masuoka , Nozomu Harada
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1461 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： Each pixel of a solid state imaging device comprises: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer and fourth semiconductor layer formed on the lateral side of the upper region of the second layer not to be in contact with the top surface of the second semiconductor layer; a gate conductor layer formed on the lower side of the second semiconductor layer; a conductor electrode formed on the side of the fourth semiconductor layer via an insulating film; and a fifth semiconductor layer formed on the top surface of the second semiconductor layer, wherein at least the third semiconductor layer, upper region of the second semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer are formed in the shape of an island. A specific voltage is applied to the conductor electrode to accumulate holes in the surface region of the fourth semiconductor layer.
摘要翻译：固态成像装置的每个像素包括：第一半导体层; 第二半导体层; 形成在所述第二层的上部区域的侧面上的第三半导体层和第四半导体层不与所述第二半导体层的顶表面接触; 形成在第二半导体层的下侧的栅极导体层; 导体电极，经由绝缘膜形成在第四半导体层的侧面上; 以及形成在所述第二半导体层的顶表面上的第五半导体层，其中至少所述第三半导体层，所述第二半导体层的上部区域，第四半导体层和第五半导体层形成为岛状。向导体电极施加特定的电压，以在第四半导体层的表面区域中积聚孔。

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