专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5587329A Method for fabricating a switching transistor having a capacitive network proximate a drift region 失效
标题翻译：一种用于制造具有靠近漂移区域的电容网络的开关晶体管的方法
公开(公告)号：US5587329A
公开(公告)日：1996-12-24
申请号：US295374
申请日：1994-08-24
申请人： Fu-Lung Hseuh , Alfred C. Ipri , Gary M. Dolny , Roger G. Stewart
发明人： Fu-Lung Hseuh , Alfred C. Ipri , Gary M. Dolny , Roger G. Stewart
IPC分类号： H01L29/786 , G09G3/30 , H01L27/088 , H01L27/12 , H01L21/786
CPC分类号： H01L27/1203 , G09G3/30 , H01L27/088 , H01L27/12 , G09G2300/0842
摘要： In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
摘要翻译：在有源矩阵电致发光显示器中，包含EL单元和用于EL单元的开关电子器件之间的接地导电电场屏蔽的像素。在制造像素的方法中，首先，形成EL单元切换电路，然后在开关电路上形成绝缘层，并且在绝缘层上形成导电层（场屏蔽）。在屏蔽层中设置通孔，使得可以在开关电路和EL单元之间形成电连接。然后通常将EL电池形成在屏蔽层的顶部。因此，屏蔽将开关电路与EL单元隔离，并确保在EL单元中产生的任何电场不会干扰开关电子器件的操作。此外，每个单元的开关电路包含两个晶体管; 低压MOS晶体管和高压MOS晶体管。低电压晶体管由数据和选择线上的信号控制。当激活时，低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。该栅极电荷存储在高电压晶体管的栅电极和电场屏蔽之间。另外，为了提高高压晶体管的击穿电压，在该晶体管的漂移区附近制造电容分压网络。这样，网络在漂移区域上均匀地分布电场。

2. 发明授权

US06417825B1 Analog active matrix emissive display 有权
标题翻译：模拟有源矩阵发射显示
公开(公告)号：US06417825B1
公开(公告)日：2002-07-09
申请号：US09200513
申请日：1998-11-25
申请人： Roger G. Stewart , Alfred C. Ipri
发明人： Roger G. Stewart , Alfred C. Ipri
IPC分类号： G09G330
CPC分类号： G09G3/30 , G09G3/2011 , G09G3/2018 , G09G3/2051 , G09G2300/0809 , G09G2300/0842
摘要： An emissive display device such as an active matrix electroluminescent display (AMEL display) has an improved method of operation. The AMEL display produces gray scale operation comprising an array of pixels, each pixel including a first transistor having its gate connected to a select line, its source connected to a data line, and its drain connected to the gate of a second transistor. The second transistor has its source adapted to receive a ramped voltage level, and its drain connected to a first electrode of an electroluminescent cell. The electroluminescent cell has a second electrode connected to an alternating current high voltage power source, wherein the electroluminescent cell is illuminated, when the ramp voltage level is less than a voltage level on the gate of the second transistor. The ramp voltage level is increased linearly during a frame duration, and the alternating current high voltage power source is on continuously during the same frame duration. The alternating current high voltage power source may also be varied in amplitude from a minimum peak-to-peak value to a maximum peak-to-peak value during the frame duration.
摘要翻译：诸如有源矩阵电致发光显示器（AMEL显示器）的发射显示装置具有改进的操作方法。 AMEL显示器产生包括像素阵列的灰度级操作，每个像素包括其栅极连接到选择线的第一晶体管，其源极连接到数据线，其漏极连接到第二晶体管的栅极。第二晶体管的源极适于接收斜坡电压电平，其漏极连接到电致发光单元的第一电极。电致发光单元具有连接到交流高压电源的第二电极，其中当斜坡电压电平小于第二晶体管的栅极上的电压电平时，电致发光单元被照亮。斜坡电压电平在帧持续时间内线性增加，并且交流电压高电压电源在相同的帧持续时间期间连续地连续。在帧持续时间期间，交流电压高压电源也可以从最小峰 - 峰值到最大峰 - 峰值的幅度变化。

3. 发明授权

US5076667A High speed signal and power supply bussing for liquid crystal displays 失效
标题翻译：液晶显示器的高速信号和电源总线
公开(公告)号：US5076667A
公开(公告)日：1991-12-31
申请号：US471566
申请日：1990-01-29
申请人： Roger G. Stewart , Alfred C. Ipri
发明人： Roger G. Stewart , Alfred C. Ipri
IPC分类号： G02F1/1345
CPC分类号： G02F1/1345
摘要： A Liquid Crystal Display device has first and second transparent substrates with a liquid crystal material sealed therebetween; a centrally disposed optically active display region having a matrix of pixels and a first and second scanner, and a transparent common electrode formed on the inner surface of the first and second transparent substrates, respectively; and a power supply and data signal distribution region surrounding at least a portion of the optically active display region and near the first and second scanners. The power supply and data signal distribution region comprises (a) a groove, and (b) a plurality of parallel conductors, formed on the inner surface of the second and first transparent substrates, respectively, which conductors include a height extending into the groove to reduce each conductor's resistance. Conductor capacitance is reduced by (a) eliminating the transparent common electrode from the groove, and/or (b) providing an inert dielectric material or gas in the distribution region with a lower dielectric constant than the liquid crystal material.
摘要翻译：液晶显示装置具有密封在其间的液晶材料的第一和第二透明基板; 分别具有像素矩阵和第一和第二扫描仪的中心布置的光学活性显示区域和分别形成在第一和第二透明基板的内表面上的透明公共电极; 以及围绕光学活动显示区域的至少一部分并且靠近第一和第二扫描器的电源和数据信号分配区域。电源和数据信号分配区域包括（a）分别形成在第二和第一透明基板的内表面上的凹槽和（b）多个平行导体，该导体包括延伸到凹槽中的高度减少每个导线的电阻。通过（a）从沟槽去除透明公共电极，和/或（b）在分布区域中提供比液晶材料低的介电常数的惰性电介质材料或气体来减小导体电容。

4. 发明授权

US4828365A Multicolor filter for producing purer white across a display device 失效
标题翻译：用于在显示设备上生产纯白色的多色滤光片
公开(公告)号：US4828365A
公开(公告)日：1989-05-09
申请号：US158954
申请日：1988-02-22
申请人： Roger G. Stewart , Alfred C. Ipri
发明人： Roger G. Stewart , Alfred C. Ipri
IPC分类号： G02B5/20 , G02F1/1335 , G02F1/13357
CPC分类号： G02F1/133514 , G02F2201/52
摘要： A multicolor filter for a display device includes separate filter elements for individually providing the primary colors of light. The areas of the filter elements are tailored in accordance with the percentages of primary light colors in pure white light, the percentages of primary light in the illuminating source, and the light transmission capabilities of the filter elements. Additionally, the filter elements are configured so that the centroid of the filter elements are within the close proximity of a straight line passing through adjacent filter elements.

5. 发明授权

US4442447A Electrically alterable nonvolatile floating gate memory device 失效
标题翻译：电可变非挥发性浮栅存储器件
公开(公告)号：US4442447A
公开(公告)日：1984-04-10
申请号：US472636
申请日：1983-03-07
申请人： Alfred C. Ipri , Roger G. Stewart
发明人： Alfred C. Ipri , Roger G. Stewart
IPC分类号： G11C14/00 , G11C16/04 , G11C17/00 , H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792 , H01L27/02 , G11C11/40
CPC分类号： G11C16/0416 , H01L29/7883
摘要： An electrically alterable, nonvolatile floating gate memory device is described having enhanced write efficiency by reason of an extension of the floating gate member. The extension is made to extend over the drain line of an adjacent memory device and serves to provide the floating gate member with additional capacitance during the write operation thereby permitting a higher write efficiency for a given voltage.
摘要翻译：描述了一种电气可变的非易失性浮动栅极存储器件，其通过浮动栅极部件的延伸而具有增强的写入效率。延伸部分延伸到相邻存储器件的漏极线上，并且用于在写入操作期间为浮置栅极部件提供额外的电容，从而允许给定电压的更高的写入效率。

6. 发明授权

US4933904A Dense EPROM having serially coupled floating gate transistors 失效
标题翻译：密集EPROM具有串联耦合的浮栅晶体管
公开(公告)号：US4933904A
公开(公告)日：1990-06-12
申请号：US134585
申请日：1987-12-14
申请人： Roger G. Stewart , Alfred C. Ipri , Louis S. Napoli
发明人： Roger G. Stewart , Alfred C. Ipri , Louis S. Napoli
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L29/7883
摘要： A compact memory has a plurality of memory cells that are serially coupled. The plurality of cells are capacitively coupled to a substrate and directly coupled to switching circuits at both of its ends, which can disconnect the plurality of cells from a bit line at one end and a ground bus at the other end. An inhibit operation comprises precharging an array of pluralities of cells and the discharging of a selected plurality of cells. A WRITE operation comprises turning ON non-selected cells and then applying a programming voltage to a selected cell.
摘要翻译：紧凑型存储器具有串联连接的多个存储单元。多个单元电容耦合到衬底并且直接耦合到其两端的开关电路，其可以将多个单元与一端的位线和另一端的接地总线断开。禁止操作包括对多个单元的阵列进行预充电和所选择的多个单元的放电。写操作包括打开未选择的单元，然后将编程电压施加到所选单元。

7. 发明授权

US4926236A Multilayer interconnect and method of forming same 失效
标题翻译：多层互连及其形成方法
公开(公告)号：US4926236A
公开(公告)日：1990-05-15
申请号：US828687
申请日：1986-02-12
申请人： Alfred C. Ipri , Roger G. Stewart
发明人： Alfred C. Ipri , Roger G. Stewart
IPC分类号： H01L23/528
CPC分类号： H01L23/5283 , H01L2924/0002 , Y10S257/915
摘要： A multilayer interconnect and method of forming the same between first and second overlying conductive strips separated by an insulating layer having an aperture therethrough. The improvement wherein at least one edge of the first strip is aligned with an overlying edge of the second strip. The interconnect is formed by depositing the second strip on the insulating layer such that it at least partially overlaps the aperture and extends beyond an edge of the first strip. The second strip and first strip are then partially removed such that at least one edge of the first and second conductive strips are aligned.
摘要翻译：在由具有穿过其中的孔的绝缘层分隔的第一和第二覆盖导电条之间形成其的多层互连和方法。改进之处在于，第一条带的至少一个边缘与第二条带的上覆边缘对齐。互连是通过将第二条带沉积在绝缘层上形成的，使得其至少部分地与孔隙重叠并且延伸超过第一条带的边缘。然后部分地移除第二条带和第一条带，使得第一和第二导电条的至少一个边缘对齐。

8. 发明授权

US4965646A Thin film transistor and crossover structure for liquid crystal displays 失效
标题翻译：薄膜晶体管和液晶显示器的交叉结构
公开(公告)号：US4965646A
公开(公告)日：1990-10-23
申请号：US260845
申请日：1988-10-21
申请人： Alfred C. Ipri , Roger G. Stewart
发明人： Alfred C. Ipri , Roger G. Stewart
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/768 , H01L23/522 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/1368 , G02F2001/136231
摘要： A three-mask process for fabricating liquid crystal devices enables the simultaneous fabrication of thin film transistors and conductor crossovers, thereby permitting the simultaneous fabrication of drive circuitry on the periphery of the devices.

9. 发明授权

US4618876A Electrically alterable, nonvolatile floating gate memory device 失效
标题翻译：电动可变的非易失性浮栅存储器件
公开(公告)号：US4618876A
公开(公告)日：1986-10-21
申请号：US633188
申请日：1984-07-23
申请人： Roger G. Stewart , Alfred C. Ipri
发明人： Roger G. Stewart , Alfred C. Ipri
IPC分类号： H01L29/788 , H01L29/34
CPC分类号： H01L29/7883
摘要： A floating gate structure wherein the floating gate is a second level polysilicon layer that is substantially shielded from the substrate by a segmented, discontinuous first level word line. Coupling of the floating gate to the substrate for "writing" is accomplished by extending the floating gate between word line segments while electrical continuity of the word line is maintained by buried contacts which make electrical contact to a continuous third level polysilicon layer.
摘要翻译：一种浮动栅极结构，其中浮置栅极是通过分段的不连续的第一级字线基本上与衬底屏蔽的第二级多晶硅层。通过在字线段之间延伸浮动栅极，同时通过与连续的第三级多晶硅层进行电接触的埋入触点来维持字线的连续性来实现浮置栅极与基板的“写入”耦合。

10. 发明授权

US4577215A Dual word line, electrically alterable, nonvolatile floating gate memory device 失效
标题翻译：双字线，电可变，非易失性浮栅存储器件
公开(公告)号：US4577215A
公开(公告)日：1986-03-18
申请号：US467643
申请日：1983-02-18
申请人： Roger G. Stewart , Alfred C. Ipri
发明人： Roger G. Stewart , Alfred C. Ipri
IPC分类号： G11C16/04 , H01L29/788 , H01L29/78
CPC分类号： G11C16/0425 , H01L29/7883
摘要： A structure having dual word line, electrically alterable, nonvolatile floating gate memory cell is described wherein the word-line-to-floating gate capacitance is made significantly greater than either the program-line-to-floating gate capacitance or the floating-gate-to-substrate capacitance. This allows the program line and word line to be counter driven to minimize coupling to the floating gate during the write/erase cycle and to maximize coupling during the read cycle. The net result is higher write/erase/read efficiencies than heretofore possible.
摘要翻译：描述了具有双字线，可电可变非易失性浮置栅极存储单元的结构，其中字线对浮置栅极电容明显大于编程线到浮置栅极电容或浮动栅极 - 对基板电容。这允许程序行和字线被反向驱动以在写/擦除周期期间最小化与浮动栅极的耦合，并且在读周期期间最大化耦合。最终的结果是比以前更高的写入/擦除/读取效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式