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    • 3. 发明授权
    • Furnace for rapid thermal processing
    • 炉子快速热处理
    • US06173116B2
    • 2001-01-09
    • US09506543
    • 2000-02-17
    • Freddy RoozeboomPeter A. DuinePaul Van Der Sluis
    • Freddy RoozeboomPeter A. DuinePaul Van Der Sluis
    • A21B200
    • H01L21/67115C30B25/105C30B31/12G02F2202/34
    • A Method (1) for Rapid Thermal Processing of a wafer (7), wherein the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device includes a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.
    • 一种用于晶片(7)的快速热处理的方法(1),其中所述晶片(7)被灯(9)加热,并且所述热辐射由位于所述晶片(7)中的光学开关器件(15,17)反射 在加热阶段反映状态。 在晶片(7)的冷却阶段期间,热量被处于吸热状态的开关装置(15,17)吸收。 开关装置包括能够通过氢气交换形成氢化物的三价金属如钆的转换膜。 取决于氢化物的氢浓度,膜反射或吸收热量。 可以通过改变氢的分压来改变开关膜中的氢含量,或者优选地,通过改变在电化学电池中形成层叠层的一部分的切换膜的电位来改变开关膜中的氢含量。