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1. 发明授权

US08877657B2 Process for producing semiconductive layers 有权
标题翻译：生产半导体层的工艺
公开(公告)号：US08877657B2
公开(公告)日：2014-11-04
申请号：US13266935
申请日：2010-04-26
申请人： Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
发明人： Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
IPC分类号： H01L21/31 , H01L29/786 , C23C18/12 , H01L21/02 , H01L29/66
CPC分类号： C23C18/1216 , C23C18/1245 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.
摘要翻译：本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液：由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C）在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。

2. 发明申请

US20120043537A1 PROCESS FOR PRODUCING SEMICONDUCTIVE LAYERS 有权
标题翻译：生产半导体层的工艺
公开(公告)号：US20120043537A1
公开(公告)日：2012-02-23
申请号：US13266935
申请日：2010-04-26
申请人： Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
发明人： Andrey Karpov , Friederike Fleischhaker , Imme Domke , Marcel Kastler , Veronika Wloka , Lothar Weber
IPC分类号： H01L29/22 , H01L21/16 , C01B21/00
CPC分类号： C23C18/1216 , C23C18/1245 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms, or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a temperature of 20 to 200° C., in order to convert the at least one precursor compound to at least one semiconductive metal oxide, where, if electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 is used as the precursor compound in step (A), it is obtained by reacting zinc oxide or zinc hydroxide with ammonia, to a substrate which has been coated with at least one semiconductive metal oxide and is obtainable by this process, to the use of this substrate in electronic components, and to a process for preparing electrically neutral [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, by reacting zinc oxide and/or zinc hydroxide with ammonia.
摘要翻译：本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）制备包含至少一种选自以下的金属氧化物的至少一种前体化合物的溶液：由具有至少三个碳原子的单羧酸，二羧酸或多羧酸的羧酸盐组成的组，或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸酯，异羟肟酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，氨基甲酸酯，氨，胺，膦，铵化合物，相应金属的叠氮化物及其混合物，在至少一种溶剂中，（B）将来自步骤（A）的溶液施加到基材上，（C）在20至200℃的温度下对来自步骤（B）的基底进行热处理，以将至少一种前体化合物转化为至少一种半导体金属氧化物，其中如果电中性[（OH）x（NH3）yZn] z其中x，y和z各自独立地为0.01〜10作为步骤（A）中的前体化合物，通过使氧化锌或氢氧化锌与氨反应得到已经涂覆有至少一种半导体金属氧化物并且可以通过该方法获得的衬底，用于电子部件中的该衬底以及制备电中性[（OH）x（NH 3）y Zn] z的方法，其中 x，y和z各自独立地为0.01〜10，通过使氧化锌和/或氢氧化锌与氨反应。

3. 发明申请

US20120086002A1 THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS 有权
标题翻译：用于改进间断接触点和用于填充半导体金属氧化物颗粒层中的相互作用的热可塑前体化合物
公开(公告)号：US20120086002A1
公开(公告)日：2012-04-12
申请号：US13378765
申请日：2010-06-15
申请人： Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
发明人： Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
IPC分类号： H01L29/22 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02601 , H01L21/02628
摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:(A) applying a porous layer of at least one semiconductive metal oxide to a substrate,(B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and(C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide,wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.
摘要翻译：本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B）用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。

4. 发明授权

US09129801B2 Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers 有权
标题翻译：用于改善晶间接触部位并填充半导体金属氧化物颗粒层间隙的热不稳定前体化合物
公开(公告)号：US09129801B2
公开(公告)日：2015-09-08
申请号：US13378765
申请日：2010-06-15
申请人： Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
发明人： Friederike Fleischhaker , Imme Domke , Andrey Karpov , Marcel Kastler , Veronika Wloka , Lothar Weber
IPC分类号： H01L21/00 , H01L21/16 , H01L21/02 , H01L29/10 , H01L29/12
CPC分类号： H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02601 , H01L21/02628
摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.
摘要翻译：本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B）用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。

5. 发明授权

US08691168B2 Process for preparing a zinc complex in solution 失效
标题翻译：在溶液中制备锌络合物的方法
公开(公告)号：US08691168B2
公开(公告)日：2014-04-08
申请号：US13582108
申请日：2011-04-27
申请人： Veronika Wloka , Friederike Fleischhaker
发明人： Veronika Wloka , Friederike Fleischhaker
IPC分类号： C01G9/00
CPC分类号： H01L21/02554 , H01L21/02422 , H01L21/02573 , H01L21/02628 , H01L29/7869
摘要： The present invention provides a process for preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH)2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z each independently 0.01 to 10 with a concentration c1, (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH)2, (C) removing solid Zn(OH)2 from the suspension from step (B), and (D) contacting the Zn(OH)2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 with the concentration c2, and to highly concentrated solutions of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, to a process for producing a layer comprising at least zinc oxide on a substrate, comprising at least the steps of (E) preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 by the former process according to the invention, (F) applying the solution from step (E) to the substrate and (G) thermally treating the substrate from step (F) at a temperature of 20 to 450° C. in order to convert electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 to zinc oxide.
摘要翻译：本发明提供了一种制备电荷不含电荷[（OH）x（NH 3）y Zn] z的溶液的方法，其中x，y和z各自独立地为0.01至10，至少包括以下步骤：（A）使ZnO和/ 或Zn（OH）2与氨在至少一种溶剂中的溶液，以获得电荷不饱和的[（OH）x（NH 3）y Zn] z的溶液，其中x，y和z各自独立地为0.01至10，浓度为c1， B）从步骤（A）的溶液中除去一些溶剂，以获得包含Zn（OH）2，（C）从步骤（B）的悬浮液中除去固体Zn（OH）2的悬浮液，和（D）接触（C）中的Zn（OH）2与氨在至少一种溶剂中以获得电荷不含电荷[（OH）x（NH 3）y Zn] z的溶液，其中x，y和z各自独立地为0.01至10 浓度c2以及电荷不饱和的[（OH）x（NH 3）y Zn] z的高浓度溶液，其中x，y和z各自独立地为0.01至10，（OH）x（NH 3）yZn] z的溶液中的至少一个步骤，其中x，y和z各自独立地为0.01至10，前者是根据（F）将步骤（E）的溶液施加到基材上，（G）在20至450℃的温度下从步骤（F）对基材进行热处理，以将不带电荷的[（OH ）x（NH 3）yZn] z其中x，y和z各自独立地为氧化锌的0.01至10。

6. 发明申请

US20120328509A1 PROCESS FOR PREPARING A ZINC COMPLEX IN SOLUTION 失效
标题翻译：在溶液中制备ZINC复合物的方法
公开(公告)号：US20120328509A1
公开(公告)日：2012-12-27
申请号：US13582108
申请日：2011-04-27
申请人： Veronika Wloka , Friederike Fleischhaker
发明人： Veronika Wloka , Friederike Fleischhaker
IPC分类号： H01B1/06 , H01L21/20 , C01G9/02
CPC分类号： H01L21/02554 , H01L21/02422 , H01L21/02573 , H01L21/02628 , H01L29/7869
摘要： The present invention provides a process for preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH)2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z each independently 0.01 to 10 with a concentration c1, (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH)2, (C) removing solid Zn(OH)2 from the suspension from step (B), and (D) contacting the Zn(OH)2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 with the concentration c2, and to highly concentrated solutions of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10, to a process for producing a layer comprising at least zinc oxide on a substrate, comprising at least the steps of (E) preparing a solution of electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 by the former process according to the invention, (F) applying the solution from step (E) to the substrate and (G) thermally treating the substrate from step (F) at a temperature of 20 to 450° C. in order to convert electrically uncharged [(OH)x(NH3)yZn]z where x, y and z are each independently 0.01 to 10 to zinc oxide.
摘要翻译：本发明提供了一种制备电荷不含电荷[（OH）x（NH 3）y Zn] z的溶液的方法，其中x，y和z各自独立地为0.01至10，至少包括以下步骤：（A）使ZnO和/ 或Zn（OH）2与氨在至少一种溶剂中的溶液，以获得电荷不含电荷[（OH）x（NH 3）y Zn] z的溶液，其中x，y和z各自独立地为0.01至10，浓度为c1， B）从步骤（A）的溶液中除去一些溶剂，以获得包含Zn（OH）2，（C）从步骤（B）的悬浮液中除去固体Zn（OH）2的悬浮液，和（D）接触（C）中的Zn（OH）2与氨在至少一种溶剂中以获得电荷不含电荷[（OH）x（NH 3）y Zn] z的溶液，其中x，y和z各自独立地为0.01至10 浓度c2以及电荷不饱和的[（OH）x（NH 3）y Zn] z的高浓度溶液，其中x，y和z各自独立地为0.01至10，（OH）x（NH 3）yZn] z的溶液中的至少一个步骤，其中x，y和z各自独立地为0.01至10，前者是根据（F）将步骤（E）的溶液施加到基材上，（G）在20至450℃的温度下从步骤（F）对基材进行热处理，以将不带电荷的[（OH ）x（NH 3）yZn] z其中x，y和z各自独立地为氧化锌的0.01至10。

7. 发明授权

US09263591B2 Metal oxide field effect transistors on a mechanically flexible polymer substrate having a die-lectric that can be processed from solution at low temperatures 有权
标题翻译：金属氧化物场效应晶体管在机械柔性聚合物基材上，具有可在低温下从溶液中加工的电介质
公开(公告)号：US09263591B2
公开(公告)日：2016-02-16
申请号：US13515303
申请日：2010-12-03
申请人： Friederike Fleischhaker , Veronika Wloka , Thomas Kaiser
发明人： Friederike Fleischhaker , Veronika Wloka , Thomas Kaiser
IPC分类号： H01L29/786 , H01L29/49 , H01L27/12
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L27/1292 , H01L29/4908 , H01L29/78603
摘要： The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350° C., and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350° C.
摘要翻译：本发明涉及一种用于制造电子部件的方法，特别是包括至少一个基板，至少一个电介质和至少一个半导体金属氧化物的场效应晶体管（FET），其中所述电介质或前体化合物基于有机改性的氧化硅化合物，特别是基于硅二恶烷和/或硅氧烷的化合物可以从溶液中加工出来，并在低温从室温至350℃下进行热处理，半导体金属氧化物在特别是ZnO或其前体化合物也可以在低温从室温至350℃下从溶液中加工。

8. 发明申请

US20120280228A1 METAL OXIDE FIELD EFFECT TRANSISTORS ON A MECHANICALLY FLEXIBLE POLYMER SUBSTRATE HAVING A DIE-LECTRIC THAT CAN BE PROCESSED FROM SOLUTION AT LOW TEMPERATURES 有权
标题翻译：机械柔性聚合物基体上的金属氧化物场效应晶体管，具有可以在低温下从溶液中加工的金属氧化物
公开(公告)号：US20120280228A1
公开(公告)日：2012-11-08
申请号：US13515303
申请日：2010-12-03
申请人： Friederike Fleischhaker , Veronika Wloka , Thomas Kaiser
发明人： Friederike Fleischhaker , Veronika Wloka , Thomas Kaiser
IPC分类号： H01L29/22 , H01L21/368 , H01L21/31
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L27/1292 , H01L29/4908 , H01L29/78603
摘要： The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350° C., and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350° C.
摘要翻译：本发明涉及一种用于制造电子部件的方法，特别是包括至少一个基板，至少一个电介质和至少一个半导体金属氧化物的场效应晶体管（FET），其中所述电介质或前体化合物基于有机改性的氧化硅化合物，特别是基于硅二恶烷和/或硅氧烷的化合物可以从溶液中加工出来，并在低温从室温至350℃下进行热处理，半导体金属氧化物在特别是ZnO或其前体化合物也可以在低温从室温至350℃下从溶液中加工。

9. 发明申请

US20110220365A1 PROCESS FOR PRODUCING MINERAL OIL USING SURFACTANTS BASED ON C16C18-CONTAINING ALKYL PROPOXY SURFACTANTS 有权
标题翻译：使用基于C16C18的含有烷氧基丙酸酯的表面活性剂生产矿物油的方法
公开(公告)号：US20110220365A1
公开(公告)日：2011-09-15
申请号：US13044283
申请日：2011-03-09
申请人： CHRISTIAN BITTNER , Günter Oetter , Jack Tinsley , Christian Spindler , Gabriela Alvarez Jürgenson , Sophie Vogel , Veronika Wloka , Marcus Guzmann
发明人： CHRISTIAN BITTNER , Günter Oetter , Jack Tinsley , Christian Spindler , Gabriela Alvarez Jürgenson , Sophie Vogel , Veronika Wloka , Marcus Guzmann
IPC分类号： E21B43/00 , C07F9/02
CPC分类号： C09K8/602 , B01F17/0057 , B01F17/0064 , C07C305/06 , C09K8/584
摘要： The invention relates to a process for mineral oil production by means of Winsor Type III microemulsion flooding, in which an aqueous surfactant formulation comprising at least one ionic surfactant of the general formula R1—O—(CH2C(CH3)HO)m(CH2CH2O)n—XY−M+ is injected through injection boreholes into a mineral oil deposit, and crude oil is withdrawn from the deposit through production boreholes. The invention further relates to ionic surfactants of the general formula.
摘要翻译：本发明涉及一种通过Winsor III型微乳液驱油的矿物油生产方法，其中含有至少一种通式为R 1 -O-（CH 2 C（CH 3）HO）m（CH 2 CH 2 O） n-XY-M +通过注射钻孔注入矿物油沉积物中，原油通过生产钻孔从沉积物中排出。本发明还涉及通式的离子表面活性剂。

10. 发明申请

US20100189623A1 METHOD FOR THE RECOVERY OF MINERAL ACIDS FROM SALINE SOLUTIONS 失效
标题翻译：从盐溶液中回收矿物酸的方法
公开(公告)号：US20100189623A1
公开(公告)日：2010-07-29
申请号：US12602504
申请日：2008-06-09
申请人： Veronika Wloka , Torsten Mattke , Carsten Knoesche , Daniel Breuninger , Nils Bottke
发明人： Veronika Wloka , Torsten Mattke , Carsten Knoesche , Daniel Breuninger , Nils Bottke
IPC分类号： C01B21/24 , C07C211/00 , C01B7/01 , C01B17/90
CPC分类号： C01B7/055 , B01D15/00 , B01J20/18 , C01B7/0718 , C07C209/78 , C07C211/50
摘要： The invention relates to a process for recovering acids from product streams of organic syntheses, which comprises the steps a) neutralization of the acid with a base, b) removal of the base by means of adsorption, c) recovery of the acid.
摘要翻译：本发明涉及从有机合成产物流中回收酸的方法，其包括步骤a）用碱中和酸，b）通过吸附除去碱，c）回收酸。

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