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    • 2. 发明授权
    • Apparatus and method for measurement of magnetic remanence-thickness
product of thin magnetic layers
    • 用于测量薄磁层的磁残余厚度乘积的装置和方法
    • US5629620A
    • 1997-05-13
    • US398197
    • 1995-03-02
    • Frederick J. JeffersNeil Smith
    • Frederick J. JeffersNeil Smith
    • G01N27/72G01R33/09G01R33/12G01N27/76
    • G01R33/1207G01N27/72G01R33/09
    • In the simplest embodiment of the invention, the apparatus holds the edge of the magnetized film to be measured close to, and above, a linearly biased magnetoresistive (MR) element. Magnetic poles appearing at the magnetic discontinuity at the edge of the film generate a magnetic field which is incident on the MR element, and which results in a measurable change in the element's resistivity. In a preferred embodiment, a pair of MR elements are placed so that they are both linearly biased by a magnet; only one of the MR elements being in close proximity to, and influenced by the magnetic field emanating from the edge of the magnetized film. The second MR element, selected for matched characteristics with the first MR element, is located out of the field of the magnetized film, but still subject to the same temperature environment and field noise as the first MR element. The two MR elements are configured with associated resistors as arms of a Wheatstone bridge so that the common mode fields and thermal drift signals experienced by both MR elements are canceled to the first order, and the output of the bridge is proportional to the change in resistance in the first MR element due only to the field of the magnetized film.
    • 在本发明的最简单的实施例中,该装置将被测量的被测磁片的边缘保持在线性偏置的磁阻(MR)元件上方和之上。 出现在膜边缘处的磁性不连续处的磁极产生入射在MR元件上的磁场,并导致元件电阻率的可测量的变化。 在优选实施例中,一对MR元件被放置成使得它们都被磁体线性偏置; 只有一个MR元件紧邻并受到从磁化膜的边缘发出的磁场的影响。 被选择用于与第一MR元件的匹配特性的第二MR元件位于磁化膜的场外,但仍然受到与第一MR元件相同的温度环境和场噪声的影响。 两个MR元件配置有相关联的电阻器作为惠斯通电桥的臂,使得由两个MR元件经受的共模场和热漂移信号被抵消到一阶,并且桥的输出与电阻的变化成比例 在第一MR元件中仅由于磁化膜的场。
    • 10. 发明授权
    • Magnetoresistance (MR) read elements having an active shield
    • 磁阻(MR)读取元件具有主动屏蔽
    • US08305715B2
    • 2012-11-06
    • US11965532
    • 2007-12-27
    • Daniele MauriNeil Smith
    • Daniele MauriNeil Smith
    • G11B5/39
    • B82Y25/00G01R33/093G01R33/098G11B5/3912
    • Read elements and associated methods of fabrication are disclosed. A read element as described herein includes a magnetoresistance (MR) sensor sandwiched between first and second shields. The read element uses the first shield as an active portion of the MR sensor. Instead of implementing an AFM pinning layer in the MR sensor, the first shield takes the place of the AFM pinning layer. The first shield is orthogonally coupled to the pinned layer through an orthogonal coupling layer, such as a thin layer of AFM material. Through this structure, the magnetic moment of the first shield pins the magnetic moment of the pinned layer transverse to the ABS of the read element, and an AFM pinning layer is not needed.
    • 公开了读取元件和相关联的制造方法。 如本文所述的读取元件包括夹在第一和第二屏蔽之间的磁阻(MR)传感器。 读取元件使用第一屏蔽作为MR传感器的有效部分。 代替在MR传感器中实现AFM钉扎层,第一个屏蔽取代了AFM钉扎层。 第一屏蔽层通过正交耦合层(例如AFM材料的薄层)与被钉扎层正交耦合。 通过这种结构,第一屏蔽的磁矩将钉扎层的磁矩横向于读取元件的ABS,并且不需要AFM钉扎层。