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1. 发明授权

US4457958A Method of strengthening silicon nitride ceramics 失效
标题翻译：强化氮化硅陶瓷的方法
公开(公告)号：US4457958A
公开(公告)日：1984-07-03
申请号：US266244
申请日：1981-05-22
申请人： Frederick F. Lange , David R. Clarke
发明人： Frederick F. Lange , David R. Clarke
IPC分类号： C04B35/584 , C04B41/00 , C04B41/50 , C04B41/87 , B05D3/02
CPC分类号： C04B41/009 , C04B35/584 , C04B41/00 , C04B41/5035 , C04B41/87
摘要： Si.sub.3 N.sub.4 ceramics having a glassy phase densification aid are heated while their surface is in contact with SiO.sub.2. The SiO.sub.2 forms one side of a diffusion couple and draws the glassy phase out of the ceramic. The SiO.sub.2 can be provided by heating the ceramic in air to form an SiO.sub.2 scale by the oxidation of Si.sub.3 N.sub.4, or by imbedding the ceramic in SiO.sub.2 powder. Surface pits, if any, formed during oxidation, are removed by grinding.
摘要翻译：具有玻璃相致密化助剂的Si 3 N 4陶瓷在其表面与SiO 2接触时被加热。 SiO 2形成扩散耦合的一侧并将玻璃相从陶瓷中拉出。 SiO 2可以通过在空气中加热陶瓷以通过Si 3 N 4的氧化形成SiO 2垢，或通过将陶瓷嵌入到SiO 2粉末中来提供。通过研磨除去在氧化期间形成的表面凹坑（如果有的话）。

2. 发明授权

US6087971A Method of fabricating an improved ceramic radome 失效
标题翻译：制造改进陶瓷天线罩的方法
公开(公告)号：US6087971A
公开(公告)日：2000-07-11
申请号：US417278
申请日：1982-09-13
申请人： David R. Clarke , Frederick F. Lange
发明人： David R. Clarke , Frederick F. Lange
IPC分类号： H01Q1/42 , H01Q17/00
CPC分类号： H01Q1/42
摘要： Ceramic radomes are fabricated using a method which reduces the dielectric losses of the ceramic material. A Si.sub.3 N.sub.4 ceramic powder is mixed with a suitable densification aid and then sintered to form a dense ceramic having a glassy phase. Silicon dioxide is then provided on the surface of the ceramic by packing it in silicon dioxide powder or by heating it in air to oxidize its surface. The ceramic and silicon dioxide are heated at a temperature sufficient to cause diffusion of impurities and additive cations from the glassy phase into the silicon dioxide. The surface of the ceramic is then ground to remove pits and to shape the ceramic into a radome.
摘要翻译：使用减少陶瓷材料的介电损耗的方法制造陶瓷天线罩。将Si 3 N 4陶瓷粉末与合适的致密化助剂混合，然后烧结以形成具有玻璃相的致密陶瓷。然后将二氧化硅通过将其包装在二氧化硅粉末中或通过在空气中加热以氧化其表面而在陶瓷的表面上提供二氧化硅。陶瓷和二氧化硅在足以使杂质和添加剂阳离子从玻璃相扩散到二氧化硅中的温度下被加热。然后将陶瓷的表面研磨以除去凹坑并将陶瓷成形为天线罩。

3. 发明授权

US06878466B1 Method for improving the reliability of brittle materials through the creation of a threshold strength 失效
标题翻译：通过产生阈值强度来提高脆性材料的可靠性的方法
公开(公告)号：US06878466B1
公开(公告)日：2005-04-12
申请号：US09670918
申请日：2000-09-29
申请人： Frederick F. Lange , Masa P. Rao , Antonio Javier Sanchez Herencia
发明人： Frederick F. Lange , Masa P. Rao , Antonio Javier Sanchez Herencia
IPC分类号： B32B7/00 , B32B7/02 , B32B15/04 , B32B18/00 , B32B27/00
CPC分类号： B32B18/00 , B32B2315/02 , C04B2235/6562 , C04B2235/96 , C04B2237/341 , C04B2237/343 , C04B2237/348 , C04B2237/365 , C04B2237/368 , C04B2237/704 , Y10T428/12576 , Y10T428/12611 , Y10T428/12986 , Y10T428/24942 , Y10T428/2495 , Y10T428/24992 , Y10T428/31 , Y10T428/8305
摘要： Reliable, flaw-tolerant brittle materials are produced by incorporating layers under residual compression on the surface and throughout the bulk of the material that act to trap and contain the propagation of otherwise catastrophic cracking. The residual compression within these layers acts to reduce the stress intensity of the cracks, thereby causing them to arrest until further loading is provided. This highly desirable stable, subcritical crack growth mode persists with increased loading until the applied stress is large enough to drive the crack completely through compressive region, after which failure occurs. The exact level of stress needed to accomplish this is dictated by the architectural design of the compressive layers such that the material can be designed to have any minimum strength desired, within the limits of the materials system used. This results in a truncation of the strength distribution, such that there is virtually zero probability of failure below this minimum value, i.e. the material possesses a threshold strength. Consequently, sensitivity to flaws that would ordinarily cause catastrophic failure at stresses below the threshold strength is eliminated. Furthermore, the potential exists for the complete elimination of the strength variability, hence improving reliability, through the creation of nearly deterministic, i.e. single-valued, strengths by increasing the threshold strength above the stresses at which failure normally initiates from intrinsic flaws.
摘要翻译：通过在表面上以及整个材料的整个主体内引入残余压缩层来产生可靠的，耐缺陷的脆性材料，其作用是捕获并容纳其它灾难性裂纹的传播。这些层内的残余压缩作用是降低裂纹的应力强度，从而使其停止，直至提供进一步的加载。这种非常理想的稳定的亚临界裂纹扩展模式持续增加负载，直到施加的应力足够大以通过压缩区域完全驱动裂纹，之后发生故障。实现这一点所需的精确应力水平由压缩层的结构设计决定，使得材料可以在所使用的材料系统的限度内被设计成具有所需的任何最小强度。这导致强度分布的截断，使得在该最小值之下几乎没有故障概率为零，即该材料具有阈值强度。因此，消除了通常在低于阈值强度的应力下导致灾难性故障的缺陷的敏感性。此外，通过增加阈值强度高于通常从内在缺陷引发的应力的阈值强度，存在完全消除强度变异性，从而提高可靠性的潜力，通过产生几乎确定性的即单值的强度。

4. 发明授权

US6117233A Formation of single-crystal thin SiC films 失效
标题翻译：单晶薄SiC薄膜的形成
公开(公告)号：US6117233A
公开(公告)日：2000-09-12
申请号：US907130
申请日：1997-08-06
申请人： Joachim Bill , Frederick F. Lange , Thomas Wagner , Fritz Aldinger , Detlef Heimann
发明人： Joachim Bill , Frederick F. Lange , Thomas Wagner , Fritz Aldinger , Detlef Heimann
IPC分类号： C30B1/02 , C30B23/02
CPC分类号： C30B1/023 , C30B29/36
摘要： Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.
摘要翻译：通过热解法获得薄的单晶SiC膜，待涂覆的基底被碳质聚硅烷覆盖，粘附层在惰性气氛中热解，以这种方式获得的非晶层由将其保持在700℃以上的温度。使用该工艺的特殊变化，容易形成掺杂的SiC膜。为此，掺杂剂以硅烷化合物的形式加入。

5. 发明授权

US3992497A Pressureless sintering silicon nitride powders 失效
标题翻译：无压烧结氮化硅粉末
公开(公告)号：US3992497A
公开(公告)日：1976-11-16
申请号：US491917
申请日：1974-07-25
申请人： Gerald R. Terwilliger , Frederick F. Lange
发明人： Gerald R. Terwilliger , Frederick F. Lange
IPC分类号： C04B35/584 , C04B33/32 , C04B35/58
CPC分类号： C04B35/584
摘要： A method of producing a silicon nitride article by powder techniques, wherein silicon nitride powder is used as a starting material. The silicon nitride powder, mixed with a densification aid, is heated rapidly to the sintering/densification temperature (1500.degree. to 1750.degree. C) in the absence of pressure, held there a short, closely controlled time (5 to 30 minutes) and thereafter rapidly cooled. This provides a strong product with controlled dimensional tolerances.
摘要翻译：通过粉末技术制造氮化硅制品的方法，其中使用氮化硅粉末作为起始材料。与致密化助剂混合的氮化硅粉末在没有压力的情况下被快速加热至烧结/致密化温度（1500℃至1750℃），保持短时间，紧密控制的时间（5至30分钟），此后快速冷却这提供了具有可控尺寸公差的强力产品。

6. 发明申请

US20110266551A1 HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION 有权
标题翻译：在低温水溶液中生成的多个表面上的氧化锌层覆盖的高亮度发光二极管
公开(公告)号：US20110266551A1
公开(公告)日：2011-11-03
申请号：US12938948
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
IPC分类号： H01L33/22 , H01L33/42 , H01L33/30
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
摘要翻译：一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和（0001）面的顶面。

7. 发明授权

US06770131B2 III-V compound films using chemical deposition 失效
标题翻译：使用化学沉积的III-V复合膜
公开(公告)号：US06770131B2
公开(公告)日：2004-08-03
申请号：US09989969
申请日：2001-11-20
申请人： Frederick F. Lange , David Kisailus
发明人： Frederick F. Lange , David Kisailus
IPC分类号： C30B500
CPC分类号： H04W16/28 , C23C26/00 , C30B7/005 , C30B29/403 , C30B29/406 , H04B7/0617 , H04B7/086
摘要： A process for producing crystalline III-V compound films, preferably thin films of gallium nitride and other III-V nitrides, on various single crystal substrates. The process enables the preparation of III-V compound films by the simple, direct deposition of an amorphous layer of a III-V compound precursor on a single crystal substrate (as a template). A chemical reaction followed by a single heat treatment leads to the crystallization and formation of films by pyrolysis. According to specific examples of the invention, the chemical precursors gallium dimethyl amide (Ga2[N(CH3)2]6), gallium nitrate (Ga(NO3)3, and gallium isopropoxide [Ga(OC3H7)3 are used to produce gallium nitride thin films.
摘要翻译：在各种单晶衬底上生产结晶III-V化合物膜，优选氮化镓和其它III-V氮化物的薄膜的方法。该方法能够通过在单晶衬底（作为模板）上简单直接沉积III-V化合物前体的非晶层来制备III-V化合物膜。随后进行单一热处理的化学反应导致通过热解结晶并形成膜。根据本发明的具体实例，化学前体镓二甲基酰胺（Ga 2 [N（CH 3）2] 6），硝酸镓（Ga（NO 3）3）和异丙醇镓[Ga（OC 3 H 7）3）薄膜。

8. 发明授权

US5188780A Method for preparation of dense ceramic products 失效
标题翻译：致密陶瓷制品的制备方法
公开(公告)号：US5188780A
公开(公告)日：1993-02-23
申请号：US687251
申请日：1991-04-18
申请人： Frederick F. Lange , Bhaskar V. Velamakanni
发明人： Frederick F. Lange , Bhaskar V. Velamakanni
IPC分类号： C04B35/622
CPC分类号： C04B35/622
摘要： A method of preparing dense ceramic product is described, wherein a coagulated network of ceramic powder particles in water is formed and then treated to increase the volume fraction of particles, thereby forming a water-saturated powder compact. The compact is formed into a desired shape and fired to provide the dense ceramic product. A coagulated network may advantageously be formed by mixing a ceramic powder with water at a pH that produces a net surface charge, to form a dispersed slurry and adding a sufficient amount of salt to the dispersed slurry to cause particles within the slurry to form the coagulated network. In view of the unique rheological properties of the powder compacts prepared from coagulated networks of ceramic powder particles, the compact may be processed into complex, near-net-shaped forms by introducing the compact into a mold and subjecting the mold to vibration, whereby the compact adopts the shape of the mold; once removed from the mold, the compact retains its shape without distortion.
摘要翻译：描述了一种制备致密陶瓷产品的方法，其中形成水中的陶瓷粉末颗粒的凝结网络，然后处理以增加颗粒的体积分数，从而形成水饱和粉末压块。将压块形成为所需的形状并烧制以提供致密的陶瓷产品。可以有利地通过在产生净表面电荷的pH下混合陶瓷粉末和水来形成分散的浆料并向分散的浆料中加入足够量的盐以使浆料内的颗粒形成凝固的网络。鉴于由陶瓷粉末颗粒的凝结网络制备的粉末压块的独特的流变特性，通过将模具引入模具中并使模具受到振动，可以将压块加工成复杂的近净形状，由此紧凑型采用模具的形状; 一旦从模具中取出，紧凑件保持其形状而不变形。

9. 发明授权

US4316964A Al.sub.2 O.sub.3 /ZrO.sub.2 ceramic 失效
标题翻译： Al2O3 / ZrO2陶瓷
公开(公告)号：US4316964A
公开(公告)日：1982-02-23
申请号：US167902
申请日：1980-07-14
申请人： Frederick F. Lange
发明人： Frederick F. Lange
IPC分类号： C04B35/119 , C04B35/488 , C04B35/48
CPC分类号： C04B35/4885 , C04B35/119
摘要： Fracture toughness and strength of an Al.sub.2 O.sub.3 /ZrO.sub.2 ceramic is increased by incorporating metastable grains of tetragonal ZrO.sub.2 in the structure. During cracking, the metastable tetragonal ZrO.sub.2 transforms to a stable monoclinic structure thus increasing the energy required for the crack to propagate and retarding its growth. The ZrO.sub.2 occupies from 5 to 95% of the volume of the ceramic and has dissolved in it a rare earth oxide such as Y.sub.2 O.sub.3, CeO.sub.2, La.sub.2 O.sub.3 and/or Er.sub.2 O.sub.3 to promote retention of the metastable tetragonal ZrO.sub.2.
摘要翻译：通过在结构中引入四方晶ZrO2的亚稳态晶粒，增加Al2O3 / ZrO2陶瓷的断裂韧性和强度。在开裂过程中，亚稳态四方晶ZrO2转变为稳定的单斜晶系，从而增加了裂纹传播和延缓其生长所需的能量。 ZrO2占陶瓷体积的5〜95％，并溶解有稀土氧化物如Y2O3，CeO2，La2O3和/或Er2O3，以促进亚稳态四方晶ZrO2的保留。

10. 发明申请

US20110101414A1 LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION 有权
标题翻译：具有氧化锌电流扩散和光提取层的发光二极管从低温水溶液中沉积
公开(公告)号：US20110101414A1
公开(公告)日：2011-05-05
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
IPC分类号： H01L33/32 , H01L33/40 , C01G9/02
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
摘要翻译：一种制造具有提高光提取效率的发光二极管（LED）的方法，包括提供包括p型层和n型层之间的发光有源层的基于III氮化物的LED结构; 通过将p型层的表面浸没在低温水溶液中，在p型层上外延生长氧化锌（ZnO）层，其中ZnO层是透明电流扩散层; 以及在ZnO层上沉积p型接触。效率的提高可能超过93％，成本很少或没有增加。

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