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1. 发明授权

US08520424B2 Composition of memory cell with resistance-switching layers 有权
标题翻译：具有电阻切换层的存储单元的组成
公开(公告)号：US08520424B2
公开(公告)日：2013-08-27
申请号：US13157204
申请日：2011-06-09
申请人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
发明人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S. Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

2. 发明申请

US20110310655A1 Composition Of Memory Cell With Resistance-Switching Layers 有权
标题翻译：具有电阻切换层的存储单元的组成
公开(公告)号：US20110310655A1
公开(公告)日：2011-12-22
申请号：US13157204
申请日：2011-06-09
申请人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
发明人： Franz Kreupl , Abhijit Bandyopadhyay , Yung-Tin Chen , Chu-Chen Fu , Wipul Pemsiri Jayasekara , James Kai , Raghuveer S Makala , Peter Rabkin , George Samachisa , Jingyan Zhang
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

3. 发明申请

US20110227026A1 NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有金属氧化物切换元件的非挥发性储存及其制造方法
公开(公告)号：US20110227026A1
公开(公告)日：2011-09-22
申请号：US12942575
申请日：2010-11-09
申请人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin , Chu-Chen Fu , Tong Zhang
发明人： Deepak C. Sekar , Franz Kreupl , Raghuveer Makala , Peter Rabkin , Chu-Chen Fu , Tong Zhang
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/35 , G11C2213/71 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1641 , H01L45/1675
摘要： Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air brake. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide. Sub-plantation may be used to create a titanium region between two metal oxide regions.
摘要翻译：本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。可逆电阻率开关元件可以通过在顶部电极上沉积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。一个实施例包括在金属氧化物和顶部电极之间具有双层覆盖层的可逆电阻率开关元件。制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而不用空气制动。一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。亚种植园可用于在两个金属氧化物区域之间产生钛区域。

4. 发明授权

US08395927B2 Memory cell with resistance-switching layers including breakdown layer 有权
标题翻译：具有电阻切换层的存储单元包括击穿层
公开(公告)号：US08395927B2
公开(公告)日：2013-03-12
申请号：US13157208
申请日：2011-06-09
申请人： Franz Kreupl , Chu-Chen Fu , Yibo Nian
发明人： Franz Kreupl , Chu-Chen Fu , Yibo Nian
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive intermediate layer, and first and second electrodes at either end of the RSME. A breakdown layer is electrically between, and in series with, the second electrode and the intermediate layer. The breakdown layer maintains a resistance of at least about 1-10 MΩ while in a conductive state. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME具有电阻切换层，导电中间层以及在RSME的任一端的第一和第二电极。击穿层在第二电极和中间层之间电连接并与其串联。击穿层保持至少约1-10MΩ的电阻; 而处于导电状态。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

5. 发明申请

US20110310656A1 Memory Cell With Resistance-Switching Layers Including Breakdown Layer 有权
标题翻译：具有包含故障层的电阻切换层的存储单元
公开(公告)号：US20110310656A1
公开(公告)日：2011-12-22
申请号：US13157208
申请日：2011-06-09
申请人： Franz Kreupl , Chu-Chen Fu , Yibo Nian
发明人： Franz Kreupl , Chu-Chen Fu , Yibo Nian
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive intermediate layer, and first and second electrodes at either end of the RSME. A breakdown layer is electrically between, and in series with, the second electrode and the intermediate layer. The breakdown layer maintains a resistance of at least about 1-10 MΩ while in a conductive state. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME具有电阻切换层，导电中间层以及在RSME的任一端的第一和第二电极。击穿层在第二电极和中间层之间电连接并与其串联。击穿层保持至少约1-10MΩ的电阻; 而处于导电状态。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

6. 发明申请

US20110133151A1 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME 有权
标题翻译：包含基于碳的存储元件的存储器单元及其形成方法
公开(公告)号：US20110133151A1
公开(公告)日：2011-06-09
申请号：US12631913
申请日：2009-12-07
申请人： Yubao Li , Chu-Chen Fu , Jingyan Zhang
发明人： Yubao Li , Chu-Chen Fu , Jingyan Zhang
IPC分类号： H01L45/00 , H01L21/20
CPC分类号： H01L45/04 , G11C13/025 , H01L27/2409 , H01L27/2481 , H01L45/124 , H01L45/149 , H01L45/1616 , H01L45/1691
摘要： A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided.
摘要翻译：提供一种形成可逆电阻切换金属 - 绝缘体 - 金属结构的方法，该方法包括形成第一非金属导电层，在第一非金属导电层上方形成非导电层，形成第二非金属导电层，在非导电层之上的金属导电层，蚀刻第一非金属导电层，非导电层和第二非金属导电层以形成柱，以及在柱的侧壁周围设置碳材料层。还提供其他方面。

7. 发明授权

US08551850B2 Methods of forming a reversible resistance-switching metal-insulator-metal structure 有权
标题翻译：形成可逆电阻切换金属 - 绝缘体 - 金属结构的方法
公开(公告)号：US08551850B2
公开(公告)日：2013-10-08
申请号：US12631913
申请日：2009-12-07
申请人： Yubao Li , Chu-Chen Fu , Jingyan Zhang
发明人： Yubao Li , Chu-Chen Fu , Jingyan Zhang
IPC分类号： H01L21/20
CPC分类号： H01L45/04 , G11C13/025 , H01L27/2409 , H01L27/2481 , H01L45/124 , H01L45/149 , H01L45/1616 , H01L45/1691
摘要： A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided.
摘要翻译：提供一种形成可逆电阻切换金属 - 绝缘体 - 金属结构的方法，该方法包括形成第一非金属导电层，在第一非金属导电层上方形成非导电层，形成第二非金属导电层，在非导电层之上的金属导电层，蚀刻第一非金属导电层，非导电层和第二非金属导电层以形成柱，以及在柱的侧壁周围设置碳材料层。还提供其他方面。

8. 发明授权

US08023310B2 Nonvolatile memory cell including carbon storage element formed on a silicide layer 有权
标题翻译：包括形成在硅化物层上的碳储存元件的非易失性存储单元
公开(公告)号：US08023310B2
公开(公告)日：2011-09-20
申请号：US12320008
申请日：2009-01-14
申请人： Chu-Chen Fu , Tanmay Kumar , Er-Xuan Ping , Huiwan Xu
发明人： Chu-Chen Fu , Tanmay Kumar , Er-Xuan Ping , Huiwan Xu
IPC分类号： G11C11/00 , G11C11/56 , H01L29/06
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1675
摘要： A nonvolatile memory cell includes a storage element, the storage element comprising a carbon material, a steering element located in series with the storage element, and a metal silicide layer located adjacent to the carbon material. A method of making a device includes forming a metal silicide over a silicon layer, forming a carbon layer over the metal silicide layer, forming a barrier layer over the carbon layer, and patterning the carbon layer, the metal silicide layer, and the silicon layer to form an array of pillars.
摘要翻译：非易失性存储单元包括存储元件，所述存储元件包括碳材料，与所述存储元件串联定位的操舵元件和位于所述碳材料附近的金属硅化物层。制造器件的方法包括在硅层上形成金属硅化物，在金属硅化物层上形成碳层，在碳层上形成阻挡层，并对碳层，金属硅化物层和硅层进行构图形成一系列的柱子。

9. 发明申请

US20100176366A1 Nonvolatile memory cell including carbon storage element formed on a silicide layer 有权
标题翻译：包括形成在硅化物层上的碳储存元件的非易失性存储单元
公开(公告)号：US20100176366A1
公开(公告)日：2010-07-15
申请号：US12320008
申请日：2009-01-14
申请人： Chu-Chen Fu , Tanmay Kumar , Er-Xuan Ping , Huiwan Xu
发明人： Chu-Chen Fu , Tanmay Kumar , Er-Xuan Ping , Huiwan Xu
IPC分类号： H01L45/00 , H01L21/308
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1675
摘要： A nonvolatile memory cell includes a storage element, the storage element comprising a carbon material, a steering element located in series with the storage element, and a metal silicide layer located adjacent to the carbon material. A method of making a device includes forming a metal silicide over a silicon layer, forming a carbon layer over the metal silicide layer, forming a barrier layer over the carbon layer, and patterning the carbon layer, the metal silicide layer, and the silicon layer to form an array of pillars.
摘要翻译：非易失性存储单元包括存储元件，所述存储元件包括碳材料，与所述存储元件串联定位的操舵元件和位于所述碳材料附近的金属硅化物层。制造器件的方法包括在硅层上形成金属硅化物，在金属硅化物层上形成碳层，在碳层上形成阻挡层，并对碳层，金属硅化物层和硅层进行构图形成一系列的柱子。

10. 发明申请

US20130075685A1 METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICES 审中-公开
标题翻译：在基于碳的存储器件中包含空气隙的方法和装置
公开(公告)号：US20130075685A1
公开(公告)日：2013-03-28
申请号：US13241098
申请日：2011-09-22
申请人： Yubao Li , Chu-Chen Fu
发明人： Yubao Li , Chu-Chen Fu
IPC分类号： H01L47/00 , H01L45/00 , B82Y10/00 , B82Y40/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/35 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/149 , H01L45/1675 , H01L51/0048 , H01L51/0591
摘要： In some aspects, a reversible resistance-switching metal-insulator-metal stack is provided that includes a first conducting layer, a carbon nano-tube (“CNT”) material above the first conducting layer, a second conducting layer above the CNT material, and an air gap between the first conducting layer and the CNT material. Numerous other aspects are provided.
摘要翻译：在一些方面，提供了可逆电阻切换金属 - 绝缘体 - 金属堆叠，其包括第一导电层，在第一导电层上方的碳纳米管（CNT）材料，CNT材料上方的第二导电层，以及第一导电层和CNT材料之间的气隙。提供了许多其他方面。

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